Taitron BSS138 Schematic [ru]

T

SMD Power MOSFET

Transistor (N-Channel)

SMD Power MOSFET Transistor (N-Channel)

Features

• Low On-Resistance:3.5Ω

• Low input capacitance:40pF

• Low output capacitance:12pF

• Low threshole:1.5V

• Fast switching speed:20nS

• RoHS Compliance

Application

• DC to DC converter

• Cellular & PCMCIA card

• Cordless telephone

• Power management in portable and battery etc.

BSS138

SOT-23

Mechanical Data

Case:

Terminals:

Weight:

Maximum Ratings (T

Symbol Description BSS138 Unit Conditions

VDSS

VGS

ID

IDM

PD

RthJA

TJ,

TSTG

Marking Code J1

Drain-Source Voltage 50 V

Gate-Source Voltage ± 20 V

Drain Current Continuous 200 mA T

Drain Current Pulsed (tp≤10µS) 800 mA

Drain Power Dissipation 225 mW T

Thermal Resistance, Junction to Ambient

Storage Temperature Range

SOT-23, Plastic Package

Solderable per MIL-STD-202G, Method 208

0.008 gram

=25ºC unless noted otherwise)

Ambient

A=25° C

A=25° C

556 ° C/W

-55 to +150 ° C

TAITRON COMPONEN

Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060

Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415

S INCORPORATED www.taitroncomponents.com

Rev. A/AH

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SMD Power MOSFET Transistor (N-Channel

BSS138

Electrical Characteristics (T

Symbol Description Min. Typ. Max. Unit Conditions

V(BR)DSS

VGS(th)

IGSS

IDSS

RDS(ON)

gFS

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage 0.5 - 1.5 V VDS=VGS, ID=1mA

Gate-Source Leakage Current - - ± 0.1 μA V

Zero Gate Voltage Drain Current

Drain-Source On-Resistance

Forward Transconductance

=25ºC unless noted otherwise)

Ambient

50 - - V V

- - 0.1 μA VDS=25V, VGS=0V

- - 0.5 μA V

- 5.6 10 Ω

- - 3.5 Ω V

100 - - mS

GS=0V, ID=250µA

DS=0V, VGS=±20V

DS=50V, VGS=0V

V

GS=2.75V, ID<200mA,

A=-40 to +85 ° C

T

GS=5.0V, ID=200mA
DS=25V, ID=200mA,

V

f=1.0KHz

Dynamic Characteristics

Symbol Description Min. Typ. Max. Unit Conditions

(T

=25ºC unless noted otherwise)

Ambient

Ciss
Crss

Coss

ton
toff

Input Capacitance - 40 50

Reverse Transfer Capacitance - 3.5 5.0

Output Capacitance - 12 25

Switching Time Turn-On Time - - 20

Switching Time Turn-Off Time - - 20

Note: (1) Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

(2) Switching Time is Essentially Independent of Operating Temperature.

pF

nS V

V

DS=25V, VGS=0V,

f=1MHz

DD=30V, ID=200mA

Rev. A/AH

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Page 2 of 7

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SMD Power MOSFET Transistor (N-Channel

BSS138

Switching Time Test Circuit

Typical Characteristics Curves

Drain Current ID (A)

Fig.1- On-Region Characteristics

Drain-Source Voltage

VDS (V)

Fig.2- Transfer Characteristics

ID (A)

Drain Current

Gate-Source Voltage

VGS (V)

Rev. A/AH

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Page 3 of 7