Taitron BAW56WS Schematic [ru]

Rev. A/NX

BAW56WS

Page 1 of 6

Three Terminals

SMD Switching Diode

Symbol

Description

BAW56

Unit

Marking Code

JC

VRM

Reverse Voltage

75

V

VRRM

Peak Reverse Voltage

100

V

IF(AV)

Forward Average Current, Half Wave Rectification with Resistive
Load and f≥50Hz

150

mA

IFSM

Peak Forward Surge Current (0.001mS)

4

A

PD

Power Dissipation Derate above 25° C

200

mW

TJ

Junction Temperature

-55 to +150

° C

TSTG

Storage Temperature Range

-55 to +150

° C

Case:

SOT-323, Plastic Case

Terminals:

Solderable per MIL-STD-750, Method 2026

Weight:

Approx. 0.005 gram

SOT-323

Three Terminals SMD Switching Diode

Features

 Fast switching speed
 Surface mount package ideally suited for automatic insertion
 Electrically Identical to Standard JEDEC
 High Conductance
 RoHS Compliant

Mechanical Data

Maximum Ratings (T

=25ºC unless noted otherwise)

Ambient

Three Terminals SMD Switching Diode

Rev. A/NX

BAW56WS

www.taitroncomponents.com

Page 2 of 6

Fig.1- Power Derating Curve

Fig.2- Typical Forward Characteristics

Ambient Temperature (°C )

Forward Voltage (V)

Symbol

Description

BAW56

Unit

Conditions

VF

Forward Voltage

0.715

V

IF=1mA

0.855

IF=10mA

1.0

IF=50mA

1.25

IF=150mA

IR

Reverse Current

0.03

µA

VR=25V

2.5

VR=75V

CT

Total Capacitance

1.5

pF

VR=0V, f=1MHz

Trr

Reverse Recovery Time

4

nS

From IF=10mA to
IR=1mA, VR=6V
RL=100Ω

RthJA

Thermal Resistance from Junction to Ambient
Air

625

° C/W

Forward Current (mA)

Power Dissipation (mW)

Electrical Characteristics (T

=25ºC unless noted otherwise)

Ambient

Typical Characteristics Curves

Three Terminals SMD Switching Diode

Rev. A/NX

BAW56WS

www.taitroncomponents.com

Page 3 of 6

Fig.3- Typical Reverse Characteristics

Reverse Voltage (V)

Reverse Current (µA)

Fig.4- Typical Junction Capacitance

Reverse Voltage (V)

Junction Capacitance (pF)

Marking Information: