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Supertex inc.
DN3765
N-Channel Depletion-Mode
Vertical DMOS FET
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Linear ampliers
► Constant current sources
► Telecom
Ordering Information
Part Number Package Option Packing
DN3765K4-G TO-252 (D-PAK) 2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
General Description
This depletion-mode (normally-on) transistor utilizes an
advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefcient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Product Summary
BV
DSX
/BV
DGX
R
(max) I
DS(ON)
DSS
(min)
650V 8.0Ω 200mA
Pin Conguration
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BV
Drain-to-gate voltage BV
DSX
DGX
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Maximum junction temperature 150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package θ
TO-252 (D-PAK) 81OC/W
Doc.# DSFP-DN3765
A070113
ja
DRAIN
SOURCE
GATE
TO-252 (D-PAK)
Product Marking
Si YYWW
DN3765
LLLLLLL
Package may or may not include the following marks: Si or
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
TO-252 (D-PAK)
Supertex inc.
www.supertex.com
Page 2
DN3765
0V
Thermal Characteristics
Package
I
D
(continuous)
†
I
D
(pulsed)
Power Dissipation
@TA = 25OC
TO-252 (D-PAK) 300mA 500mA 2.5W 300mA 500mA
Notes:
† I
(continuous) is limited by max rated Tj of 150OC.
D
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
‡
†
I
DR
I
DRM
Electrical Characteristics (T
= 25OC unless otherwise specied)
A
Sym Parameter Min Typ Max Units Conditions
BV
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
C
C
OSS
C
RSS
t
d(ON)
t
t
d(OFF)
t
V
t
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-source breakdown voltage 650 - - V VGS = -5.0V, ID = 100µA
DSX
Gate-to-source off voltage -1.5 - -3.5 V VDS = 25V, ID= 10µA
Change in V
with temperature - - -4.5 mV/OC VDS = 25V, ID= 10µA
GS(OFF)
Gate body leakage current - - 100 nA VGS = ± 20V, VDS = 0V
= -10V, VDS = Max Rating
GS
V
= -10V, VDS = 0.8 Max Rating,
GS
TA = 125°C
Drain-to-source leakage current
- - 10 µA V
- - 1.0 mA
Saturated drain-to-source current 200 - - mA VGS = 0V, VDS = 25V
Static drain-to-source on-state resistance - - 8.0 Ω VGS = 0V, ID = 150mA
Change in R
Forward transductance 100 - - mmho ID = 100mA, VDS = 10V
FS
Input capacitance - - 825
ISS
Common source output capacitance - - 190
Reverse transfer capacitance - - 11 0
with temperature - - 1.1 %/OC VGS = 0V, ID = 150mA
DS(ON)
VGS = -10V,
pF
VDS = 25V,
f = 1.0MHz
Turn-on delay time - - 50
Rise time - - 75
r
Turn-off delay time - - 75
Fall time - - 100
f
Diode forward voltage drop - - 1.8 V VGS = -5.0V, ISD = 200mA
SD
Reverse recovery time - 800 - ns VGS = -5.0V, ISD = 200mA
rr
ns
VDD = 25V,
ID = 150mA,
R
GEN
= 25Ω
Switching Waveforms and Test Circuit
90%
INPUT
0V
10%
t
d(ON)
t
(ON)
10%
90%
t
(OFF)
t
r
t
d(OFF)
-10V
VDD
OUTPUT
Doc.# DSFP-DN3765
A070113
t
f
90%
10%
2
Pulse
Generator
R
GEN
INPUT
VDD
R
L
OUTPUT
D.U.T.
Supertex inc.
www.supertex.com
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3-Lead TO-252 (D-PAK) Package Outline (K4)
DN3765
E
4
1 2 3
Front View
b3
E1
L3
θ1
D1
D
L4
L5
Note 1
b2
e
Rear View
b
View B
Side View
A
c2
H
L2
Gauge
Plane
θ
L
L1
A1
Seating
Plane
View B
Note:
1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed.
Symbol A A1 b b2 b3 c2 D D1 E E1 e H L L1 L2 L3 L4 L5
Dimen-
sion
(inches)
JEDEC Registration TO-252, Variation AA, Issue E, June 2004.
* This dimension is not specied in the JEDEC drawing.
†
This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO252K4, Version F040910.
MIN .086 .000* .025 .030 .195 .018 .235 .205 .250 .170
NOM - - - - - - .240 - - - - .060 - - - - -
MAX .094 .005 .035 .045 .215 .035 .245 .217* .265 .200* .410 .070 .050 .040 .060 10O15
.090
BSC
.370 .055
.108
REF
.035 .025* .035†0O0
.020
BSC
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
θ
θ1
O
O
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-DN3765
A070113
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
3
Tel: 408-222-8888
www.supertex.com
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