Supertex DN3535 Datasheet

Supertex inc.

www.supertex.com

N-Channel Depletion-Mode

W = Code for week sealed
= “Green” Packaging

Vertical DMOS FETs

DN3535

Features

► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage

Applications

► Normally-on switches
► Solid state relays
► Converters
► Linear ampliers
► Constant current sources
► Power supply circuits
► Telecom

Ordering Information

Part Number Package Option Packing

DN3535N8-G

-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

TO-243AA (SOT-89)

2000/Reel

Absolute Maximum Ratings

Parameter Value

General Description

This low threshold depletion-mode (normally-on) transistor
utilizes an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input

impedance and positive temperature coefcient inherent

in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.

Product Summary

R

BV

DSX

/BV

DGX

DS(ON)

(max)

350V 10Ω 200mA

I

DSS

(min)

Pin Configuration

DRAIN

Drain-to-source voltage BV

Drain-to-gate voltage BV

Gate-to-source voltage ±20V

Operating and storage
temperature

Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.

Typical Thermal Resistance

Package θ

TO-243AA (SOT-89)

Notes:

‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.

Doc.# DSFP-DN3535
A062713

ja

133OC/W

‡

-55

O

DSX

DGX

C to +150OC

SOURCE

DRAIN

GATE

TO-243AA (SOT-89)

Product Marking

DN5SW

Package may or may not include the following marks: Si or

TO-243AA (SOT-89)

Supertex inc.

www.supertex.com

Thermal Characteristics

I

Package

D

(continuous)

†

TO-243AA 230mA 500mA 1.6W

Notes:

† ID (continuous) is limited by max rated Tj.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.

I

D

(pulsed)

Power Dissipation

@TA = 25OC

‡

DN3535

†

I

DR

230mA 500mA

I

DRM

Electrical Characteristics (T

= 25OC unless otherwise specified)

A

Sym Parameter Min Typ Max Units Conditions

V

ΔV

BV

GS(OFF)

GS(OFF)

I

GSS

Drain-to-source breakdown voltage 350 - - V VGS = -5.0V, ID = 1.0µA

DSS

Gate-to-source off voltage -1.5 - -3.5 V VDS = 15V, ID = 10µA

Change in V

with temperature - - -4.5 mV/OC VDS = 15V, ID = 10µA

GS(OFF)

Gate body leakage current - - 100 nA VGS = ±20V, V

- - 1.0 µA VDS = Max rating, VGS = -5.0V

I

D(OFF)

I

DSS

R

DS(ON)

ΔR

DS(ON)

G

C

ISS

C

OSS

C

RSS

t

d(ON)

t

t

d(OFF)

t

V

SD

t

rr

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Drain-to-source leakage current

- - 1.0 mA

VDS = 0.8 Max Rating,
VGS = -5.0V, TA = 125OC

Saturated drain-to-source current 200 - - mA VGS = 0V, V

Static drain-to-source on-state
resistance

Change in R

Forward transconductance 200 - - mmho VDS = 10V, ID = 100mA

FS

with temperature - - 1.1 %/OC VGS = 0V, ID = 150mA

DS(ON)

- - 10 Ω VGS = 0V, ID = 150mA

Input capacitance - - 360

Common source output capacitance - - 40

pF

VGS = -5.0V, VDS = 25V,
f = 1.0MHz

Reverse transfer capacitance - - 10

Turn-on delay time - - 15

Rise time - - 20

r

Turn-off delay time - - 20

Fall time - - 30

f

ns

VDD = 25V,
ID = 150mA,
R

= 25Ω,

GEN

VGS = 0V to -10V

Diode forward voltage drop - - 1.8 V VGS = -5.0V, ISD = 150mA

Reverse recovery time - 800 - ns VGS = -5.0V, ISD = 150mA

DS

= 0V

DS

= 15V

Switching Waveforms and Test Circuit

0V

INPUT

-10V

VDD

OUTPUT

0V

Doc.# DSFP-DN3535
A062713

10%

t

d(ON)

t

(ON)

10%

90%

t

r

90%

t

d(OFF)

t

(OFF)

t

f

90%

10%

2

Pulse

Generator

R

GEN

INPUT

VDD

R

L

OUTPUT

D.U.T.

Supertex inc.

www.supertex.com

Typical Performance Curves

1.0

0.8

0.6

Output Characteristics

V

GS

0V

-0.5V

-0.8V

-1.0V

= +2.0V

1.0

0.8

0.6

Saturation Characteristics

DN3535

V

= +2V

GS

0V

-0.5V

-0.8V

-1V

(amperes)

0.4

D

I

0.2

0

0 50 100 150 200 250 300 350

V

(volts)

DS

Transconductance vs. Drain Current

1.0

V

= 10V

DS

0.8

TA = -55OC

0.6

TA = 25OC

(siemens)

FS

0.4

G

0.2

0

0.0 0.2 0.4 0.6 0.8

T

= 125OC

A

ID (amperes)

-1.5V

-2V

0.4

(amperes)

D

I

0.2

0

0 2 4 6 8 10

V

(volts)

DS

Power Dissipation vs. Ambient Temperature

2.0

TO-243AA

1.5

1.0

(watts)

D

P

0.5

0

0 25 50 75 100 125 150

TA (OC)

-1.5V

-2V

10

1.0

0.1

(amperes)

D

I

0.01

0.001

1 10 100 1000

Doc.# DSFP-DN3535
A062713

Maximum Rated Safe Operating Area

TA = 25OC

TO-243AA (pulsed)

TO-243AA (DC)

V

(volts)

DS

Thermal Response Characteristics

1.0

0.8

0.6

TO-243AA
P

= 1.6W

0.4

0.2

Thermal Resistance (normalized)

0

0.001 0.01 0.1 1.0 10

D

T

C

= 25OC

tP (seconds)

Supertex inc.

3

www.supertex.com

Typical Performance Curves (cont.)

DX

Xctkcvkqp"ykvj"Vgorgtcvwtg

FUX"

ID = 1mA

= -5V

V

GS

(normalized)B

V

1.2

1.1

1.0

DSV

0.9

25

20

15

(ohms)

10

DS(ON)

R

5

Qp"Tgukuvcpeg"xu0"Ftckp"Ewttgpv

V

= 0V

GS

DN3535

0.8

-50 0 50 100 150

Tj (OC)

1300

900

700

500

(milliamperes)

D

I

300

100

-3 -2 -1 0 1 2

350

300

Vtcpuhgt"Ejctcevgtkuvkeu

V

= 10V

DS

TA = -55OC

25OC

125

V

(volts)

GS

Ecrcekvcpeg"xu0"Ftckp"Uqwteg"Xqnvcig

0

0.0 0.2 0.4 0.6 0.8 1.0

ID (amperes)

X

cpf"T

1.4

1.2

1.0

O

C

(normalized)

0.8

GS(OFF)

V

0.6

0.4

IU*QHH+"

V

@ 10µA

GS(OFF)

-50 -25 0 25 50 75 100 125 150

y1Vgorgtcvwtg

FU*QP+"

R

@ 0V, 150mA

DS(ON)

2.4

2.0

1.6

1.2

0.8

0.4

(normalized)

DS(ON)

R

Tj (OC)

Icvg"Ftkxg"F{pcoke"Ejctcevgtkuvkeu

3

V

= -5V

GS

ID = 150mA

2

250

200

150

C (picofarads)

100

50

0

Doc.# DSFP-DN3535
A062713

C

ISS

C

C

RSS

0 10 20 30 40

OSS

V

DS

(volts)

1

= 40V

V

0

-1

(volts)

GS

V

-2

-3

-4

-5
0 500 1000 1500 2000

DS

QG (picocoulombs)

Supertex inc.

4

©2013

Supertex inc.

94089

el: 408-222-8888

www.supertex.com

3-Lead TO-243AA (SOT-89) Package Outline (N8)

D

D1

E

H

E1

C

DN3535

L

1 2 3

b

e

b1

A

e1

Top View

Side View

Symbol A b b1 C D D1 E E1 e e1 H L

†

1.50
BSC

3.00
BSC

3.94 0.73

Dimensions

(mm)

MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00

NOM - - - - - - - - - -

MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986.

† This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.

(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.”
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the

Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.

Doc.# DSFP-DN3535
A062713

Supertex inc. does not assume responsibility for use of devices described, and limits its liability

Supertex inc. (website: http//www.supertex.com)

1235 Bordeaux Drive, Sunnyvale, CA

5

T

†