Supertex DN3525 Datasheet

Supertex inc.

DN3525

N-Channel Depletion-Mode
Vertical DMOS FETs

Features

► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage

Applications

► Normally-on switches
► Solid state relays
► Converters
► Constant current sources
► Power supply circuits
► Telecom

Ordering Information

Part Number Package Option Packing

DN3525N8-G TO-243AA (SOT-89) 2000/Reel

-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Absolute Maximum Ratings

Parameter Value

General Description

The Supertex DN3525 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature

coefcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.

Product Summary

R

BV

DSX

/BV

DGX

DS(ON)

(max)

250mA 6.0Ω 300mA

I

DSS

(min)

Pin Conguration

DRAIN

Drain-to-source voltage BV

Drain-to-gate voltage BV

DSX

DGX

Gate-to-source voltage ±20V

Operating and storage
temperature

Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.

O

-55

C to +150OC

Typical Thermal Resistance

Package θ

TO-243AA (SOT-89) 133OC/W

Note:

Mounted on FR5 board, 25mm x 25mm x 1.57mm.

Doc.# DSFP-DN3525
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SOURCE

DRAIN

GATE

TO-243AA (SOT-89)

Product Marking

DN5CW

Package may or may not include the following marks: Si or

W = Code for week sealed
= “Green” Packaging

TO-243AA (SOT-89)

Supertex inc.

www.supertex.com

0V

Thermal Characteristics

I

Package

D

(continuous)

†

TO-243AA 360mA 1.0A 1.6W

Notes:

† ID (continuous) is limited by max rated TJ.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.

I

D

(pulsed)

Power Dissipation

@TA = 25OC

‡

DN3525

†

I

DR

360mA 1.0A

I

DRM

Electrical Characteristics (T

= 25OC unless otherwise specied)

A

Symbol Parameter Min Typ Max Units Conditions

V

ΔV

BV

GS(OFF)

GS(OFF)

I

GSS

Drain-to-source breakdown voltage 250 - - V VGS = -5.0V, ID = 100µA

DSX

Gate-to-source off voltage -1.5 - -3.5 V VDS = 15V, ID = 1.0mA

Change in V

with temperature - - -4.5 mV/OC VDS = 15V, ID = 1.0mA

GS(OFF)

Gate body leakage current - - 100 nA VGS = ±20V, V

- - 1.0 µA VDS = Max rating, VGS = -5.0V

I

D(OFF)

I

DSS

R

DS(ON)

ΔR

DS(ON)

G

C

ISS

C

OSS

C

RSS

t

d(ON)

t

t

d(OFF)

t

V

SD

t

rr

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Drain-to-source leakage current

- - 1.0 mA

VDS = 0.8 Max Rating,
VGS = -5.0V, TA = 125OC

Saturated drain-to-source current 300 - - mA VGS = 0V, V

Static drain-to-source on-state
resistance

Change in R

Forward transconductance 225 - - mmho VDS = 10V, ID = 150mA

FS

with temperature - - 1.1 %/OC VGS = 0V, ID = 200mA

DS(ON)

Input capacitance - 270 350

Common source output capacitance - 20 60

Reverse transfer capacitance - 5.0 20

Turn-on delay time - - 20

Rise time - - 25

r

Turn-off delay time - - 25

Fall time - - 40

f

- - 6.0 Ω VGS = 0V, ID = 200mA

VGS = -5.0V,

pF

VDS = 25V,
f = 1.0MHz

VDD = 25V,

ns

ID = 150mA,
R

= 25Ω,

GEN

VGS = 0V to -10V

Diode forward voltage drop - - 1.8 V VGS = -5.0V, ISD = 150mA

Reverse recovery time - 800 - ns VGS = -5.0V, ISD = 150mA

= 15V

DS

DS

= 0V

Switching Waveforms and Test Circuit

90%

INPUT

0V

10%

t

d(ON)

t

(ON)

10%

90%

t

(OFF)

t

r

t

d(OFF)

t

90%

-10V

VDD

OUTPUT

Doc.# DSFP-DN3525
C062813

VDD

Pulse

Generator

R

GEN

f

10%

INPUT

R

L

OUTPUT

D.U.T.

Supertex inc.

2

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Typical Performance Curves

DN3525

1.4

1.2

1.0

0.8

(Amperes)

0.6

D

I

0.4

0.2

0.0
050 100 150 200 250

1.0

0.8

0.6

Output Characteristics

V

(Volts)

DS

Transconductance vs. Drain Current

VDS=10V

TA = -55OC

TA = 125OC

(Siemens)

FS

0.4

G

V

= +2V

GS

0V

-0.5V

-0.8V

-1V

-1.5V

-2V

TA = 25OC

1.4

1.2

1.0

0.8

(Amperes)

0.6

D

I

0.4

0.2

0.0
0246810

Power Dissipation vs. Ambient Temperature

2.0

Saturation Characteristics

V

(Volts)

DS

TO-243AA

1.6

1.2

(Watts)

D

P

0.8

V

= +2V

GS

0V

-0.5V

-0.8V

-1V

-1.5V

-2V

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0

ID (Milliamperes)

Maximum Rated Safe Operating Area

10

TO-243AA (Pulsed)

1.0

TO-243AA (DC)

0.1

(Amperes)

D

I

0.01

0.001

1 100010010

V

(Volts)

DS

TA = 25OC

0.4

0.0
0255075 100 125 150

TA (OC)

Thermal Response Characteristics

1.0

0.8

0.6

TO-243AA
T

= 25OC

A

P

0.4

0.2

Thermal Resistance (normalized)

0

0.001 100.01 0.1 1

= 1.6W

D

tp (Seconds)

Doc.# DSFP-DN3525
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Typical Performance Curves (cont.)

BV

Variation with Temperature

1.2

1.1

1.0

(Normalized)

DSV

BV

0.9

DSV

ID = 100A

= -5V

V

GS

25

20

15

(Ohms)

10

DS(ON)

R

5

On Resistance vs. Drain Current

Tj = 25OC

V

= 0V

GS

DN3525

0.8

-50 050 100 150

Tj (OC)

2000

1600

1200

800

(Milliamperes)

D

I

400

0

-3 -2 -1 012

350

300

Transfer Characteristics

V

DS

= 10V

TA = -55OC

TA = 25OC

TA = 125OC

V

(Volts)

GS

Capacitance vs. Drain Source Voltage

= -5V

V

GS

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

ID (Amperes)

1.3

1.2

1.1

1.0

0.9

V

GS(OFF)

V

GS(OFF)

@ 1mA, 15V

and R

w/ Temperature

DS(ON)

(Normalized)

0.8

GS(OFF)

V

0.7

0.6

0.5

0.4

-50 -25 0255075 100 125 150

R

DS(ON)

@ 0V, 200mA

Tj (OC)

Gate Drive Dynamic Characteristics

3

ID = 200mA

2

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

(Normalized)

DS(ON)

R

C (Picofarads)

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250

200

150

100

50

C

ISS

C

OSS

C

RSS

0

010203040

V

(Volts)

DS

1

0

-1

(Volts)

GS

V

-2

-3

-4

-5
0 1000 2000 3000 4000 5000

V

= 30V

DS

QG (Picocoulombs)

Supertex inc.

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3-Lead TO-243AA (SOT-89) Package Outline (N8)

D

D1

E

H

E1

C

DN3525

L

1 2 3

b

e

e1

Top View

b1

A

Side View

Symbol A b b1 C D D1 E E1 e e1 H L

†

1.50

BSC

3.00

BSC

3.94 0.73

Dimensions

(mm)

MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00

NOM - - - - - - - - - -

MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986.

† This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.

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Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: [phone]

www.supertex.com

†