Supertex DN2540 Datasheet

N-Channel Depletion-Mode Vertical DMOS FETs

DN2540

Features

High input impedance

►

Low input capacitance

►

Fast switching speeds

►

Low on resistance

►

Free from secondary breakdown

►

Low input and output leakage

►

General Description

The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefﬁ cient inherent in MOS devices. Characteristic of all

Applications

Normally-on switches

►

Solid state relays

►

Converters

►

Linear ampliﬁ ers

►

Constant current sources

►

Power supply circuits

►

Telecom

►

MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Ordering Information

R

DS(ON)

max

(Ω)

Device

Package Options

TO-92 TO-220 TO-243AA

(1)

BV

DSX

/BV

(V)

DGX

DN2540 DN2540N3-G DN2540N5-G DN2540N8-G 400 25 150

-G indicates package is RoHS compliant (‘Green’) (1) Same as SOT-89.

I

DSS

min

(mA)

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

Drain-to-gate voltage BV

Gate-to-source voltage ±20V

Operating and storage temperature

-55OC to +150OC

Soldering temperature* 300OC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

DSX

DGX

Pin Conﬁ gurations

SOURCE

DRAIN

GATE

3-Lead TO-92 (N3)

DRAIN

GATE

3-Lead TO-243AA (N8)

DRAIN

SOURCE

GATE

DRAIN

3-Lead TO-220 (N5)

SOURCE

DRAIN

Product Marking

DN2540

DN

2540

YYWW

DN5DW

YY = Year Sealed WW = Week Sealed = “Green” Packaging

3-Lead TO-92 (N3)

W = Code for week sealed

DN2540N5 LLLLLLLLL

YYWW

L = Lot Number YY = Year Sealed WW = Week Sealed = “Green” Packaging

3-Lead TO-220 (N5)

3-Lead TO-243AA (N8)

Thermal Characteristics

I

D

Package

(continuous)

(mA)

(1)

TO-92 120 500 1.0 125 170 120 500

TO-220 500 500 15 8.3 70 500 500

TO-243AA 170 500 1.6

Notes:

(1) ID (continuous) is limited by max rated Tj. (2) Mounted on FR5 board, 25mm x 25mm x 1.57mm.

I

D

(pulsed)

(mA)

Power Dissipation

@TC = 25OC

(W)

(2)

Θ

jc

(OC/W)

15 78

Θ

ja

(OC/W)

(2)

(1)

I

DR

(mA)

170 500

I

DRM

(mA)

Electrical Characteristics (T

@ 25OC unless otherwise speciﬁ ed)

A

Sym Parameter Min Typ Max Units Conditions

V

ΔV

BV

GS(OFF)

I

GSS

Drain-to-source breakdown voltage 400 - - V VGS = -5.0V, ID = 100µA

DSX

Gate-to-source OFF voltage -1.5 - -3.5 V VDS = 25V, ID = 10µA

Change in V

with temperature - - 4.5 mV/OCVDS = 25V, ID = 10µA

GS(OFF)

Gate body leakage current - - 100 nA VGS = ±20V, V

- - 10 µA VDS = Max rating, VGS = -10V

I

R

ΔR

D(OFF)

I

DSS

DS(ON)

G

C

ISS

C

OSS

C

RSS

Drain-to-source leakage current

- - 1.0 mA

VDS = 0.8 Max Rating, VGS = -10V, TA = 125OC

Saturated drain-to-source current 150 - - mA VGS = 0V, V

Static drain-to-source ON-state resistance

Change in R

Forward transconductance - 325 - mmho VDS = 10V, ID = 100mA

FS

with temperature - - 1.1 %/OCVGS = 0V, ID = 120mA

DS(ON)

Input capacitance - 200 300

Common source output capacitance - 12 30

Reverse transfer capacitance - 1 5

-1725 ΩV

= 0V, ID = 120mA

GS

VGS = -10V,

pF

VDS = 25V, f = 1MHz

DS

= 0V

DS

= 25V

2

Sym Parameter Min Typ Max Units Conditions

DN2540

t

d(ON)

t

d(OFF)

t

V

SD

t

rr

Notes:

1.All D.C. parameters 100% tested at 25

2.All A.C. parameters sample tested.

Turn-ON delay time - - 10

Rise time - - 15

r

Turn-OFF delay time - - 15

Fall time - - 20

f

Diode forward voltage drop - - 1.8 V VGS = -10V, ISD = 120mA

Reverse recovery time - 800 - ns VGS = -10V, ISD = 1.0A

O

C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

Switching Waveforms and Test Circuit

INPUT

OUTPUT

0V

-10V

V

0V

10%

t

(ON)

t

d(ON)

DD

10%

90%

t

r

90%

t

d(OFF)

t

(OFF)

t

F

90%

10%

PULSE

GENERATOR

R

GEN

INPUT

ns

VDD = 25V, ID = 150mA, R

= 25Ω,

GEN

V

DD

R

L

OUTPUT

D.U.T.

3

Typical Performance Curves

DN2540

0.5

0.4

)serepma(

0.3

0.2

D

I

0.1

0

080

0.5

0.4

)snemeis

0.3

(

SF

0.2

G

Output Characteristics

320 400

160

240

VDS (volts)

Transconductance vs. Drain Current

VDS= 10V

TA = -55°C

TA = 25°C

TA = 125°C

V

GS

0.5V

0V

-0.5V

-1.0V

= 1.0V

Saturation Characteristics

250

200

)spmail

150

l

im(

100

D

I

50

0

0123 54

VDS (volts)

Power Dissipation vs. Ambient Temperature

20

TO-220

)s tt a

10

w(

D

P

V

GS

0.5V 0V

-0.5V

-1.0V

= 1.0V

0.1

0

0 25050 100 150 200

ID (milliamps) TC (°C)

Maximum Rated Safe Operating Area

1

TO-92/TO-220 (pulsed)

(TA = 25°C)

TO-243AA (DC)

0.1

)s e

re p

ma (

I

D

0.01

0.001 1 100010010

TO-92 (DC)

TC = 25°C

VDS (volts)

TO-220 (DC)

TO-243AA

TO-92

0

015010050

T(

A

= ° )

2

5

C

Thermal Response Characteristics

1.0

) d ezilamron( e

0.8

0.6

c na

t sis

0.4

e R l

a mr e

hT

TO-220

T

= 25°C

C

P

= 15W

D

0.2

0

0.001 100.01 0.1 1

TO-243AA

T

A

P

D

tp (seconds)

= 25°C

= 1.6W

1257525

TO-92

T

= 25°C

C

P

= 1.0W

D

4

Typical Performance Curves (cont.)

BV

Variation with Temperature

DSS

1.1

DN2540

On-Resistance vs. Drain Current

100

1.05

dezilamroN

SSD

0.95

VB

0.40

0.32

)serepma(

0.24

D

0.16

I

0.08

1.0

0.9

-50 0 80 160 240 320 4000

VGS = -5V

Tj (°C)

Transfer Characteristics

VDS = 10V

50

TA = -55°C

100

TA = 25°C

TA = 125°C

150

80

VGS= 0V

)smhO(

60

)no(SD

40

R

20

0

(milliamps)

I

D

V

and RDS Variation with Temperature

GS(off)

2.5

2

R

dezilamroN

1.5

1

0.5

DS (ON)

@ ID = 120mA

V

GS(OFF)

@ 10µA

0

-3 2

Capacitance Vs. Drain-to-Source Voltage

200

150

)sd

a rafociP( C

100

50

C

0

010

RSS

-1

(Volts)

V

GS

VGS = -10V

20

(Volts)

V

DS

0

12

0

-50 0 50 100 150

Tj (°C)

Gate Drive Dynamic Characteristics

C

ISS

15

10

)stl

o

5

V(

SG

200pF

VDS= 20V

V

0

C

OSS

30

40

-5

170pF

0 0.4 0.8 1.2 1.6 2.0

VDS= 40V

QC (Nanocoulombs)

5

3-Lead TO-92 Package Outline (N3)

D

DN2540

A

Seating Plane

E1

1 2 3

e1

e

Front View

1

2

Bottom View

L

b

C

Side View

E

3

Symbol A b C D E E1 e e1 L

Dimension

(inches)

Drawings not to scale.

NOM---------

MIN .170 .014 .014 .175 .125 .080 .095 .045 .500

MAX .210 .022 .022 .205 .165 .105 .105 .055 -

6

3-Lead TO-220 (Power Package) Package Outline (N5)

A

E

E2

Q

ΦP

A

Seating Plane

A1

E

H1

DN2540

Thermal Pad

D

Detail

B

D1

4

12

e

Front View

D2

Chamfer Optional

3

L

A2

A

View A - A

L1

1

c

Side View

3

2

E1

b2

b

Detail B

Symbol A A1 A2 b b2 c D D1 D2 E E1 E2 e H1 L L1 Q ΦP

MIN .140 .020 .080 .015 .045 .014 .560 .330 .480 .380 .270 -

Dimension

(inches)

JEDEC Registration TO-220, Variation AB, Issue K, April 2002.

Drawings not to scale.

NOM - - - .027 .057 - - - ---- -----

MAX .190 .055 .115 .040 .070 .024 .650 .355 .507 .420 .350 .030 .270 .580 .250 .135 .161

7

.230 .500 - .100 .139

.100 BSC

3-Lead TO-243AA (SOT-89) Package Outline (N8)

D

D1

4

C

DN2540

H

E

L

1

2

b

e

3

b1

e1

Top View

E1

A

Side View

Symbol A b b1 C D D1 E E1 e e1 H L

Dimensions

(mm)

MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13

NOM-------- --

1.50 BSC

3.00 BSC

3.94 0.89

MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale.

(The package drawing(s) in this data sheet may not reﬂ ect the most current speciﬁ cations. For the latest package outline information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-DN2540 A100907

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