Supertex DN2535 Datasheet

Supertex inc.

DRAIN

DN2535

N-Channel Depletion-Mode
Vertical DMOS FETs

Features

► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage

Applications

► Normally-on switches
► Solid state relays
► Converters
► Linear ampliers
► Constant current sources
► Power supply circuits
► Telecom

Ordering Information

Part Number Package Option Packing

DN2535N3-G TO-92 1000/Bag

DN2535N3-G P002

DN2535N3-G P003

DN2535N3-G P005

DN2535N3-G P013

DN2535N3-G P014

DN2535N5-G

-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

TO-92 2000/Reel

TO-220

50/Tube

General Description

The Supertex DN2535 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature

coefcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.

Product Summary

R

BV

DSX

/BV

DGX

DS(ON)

(max)

350V 25Ω 150mA

I

DSS

(min)

Pin Conguration

DRAIN

SOURCE

GATE

SOURCE

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

Drain-to-gate voltage BV

Gate-to-source voltage ±20V

Operating and storage
temperature

Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.

O

-55

C to +150OC

Typical Thermal Resistance

Package θ

TO-92 132OC/W

TO-220

Doc.# DSFP-DN2535
B062813

ja

29OC/W

DSX

DGX

GATE

3-Lead TO-2203-Lead TO-92

Product Marking

SiDN

2535
YYWW

Package may or may not include the following marks: Si or

DN2535N5
LLLLLLLLL

YYWW

Package may or may not include the following marks: Si or

YY = Year Sealed
WW = Week Sealed
= “Green” Packaging

3-Lead TO-92

L = Lot Number
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging

3-Lead TO-220

Supertex inc.

www.supertex.com

DRAIN

Thermal Characteristics

0V

Package

ID

(continuous)

†

TO-92 120mA 500mA 1.0W 120mA 500mA

TO-220 500mA 500mA 15W 500mA 500mA

Notes:

† ID (continuous) is limited by max rated Tj.

ID

(pulsed)

Power Dissipation

@TC = 25OC

†

I

DR

DN2535

I

DRM

Electrical Characteristics

(TA = 25OC unless otherwise specied)

Sym Parameter Min Typ Max Units Conditions

V

ΔV

BV

GS(OFF)

GS(OFF)

I

GSS

DSX

Drain-to-source breakdown voltage 350 - - V VGS = -5.0V, ID = 100µA

Gate-to-source off voltage -1.5 - -3.5 V VDS = 25V, ID = 10µA

Change in V

with temperature - - -4.5 mV/OC VDS = 25V, ID = 10µA

GS(OFF)

Gate body leakage current - - 100 nA VGS = ±20V, V

- - 10 µA VDS = Max rating, VGS = -10V

I

D(OFF)

I

DSS

R

DS(ON)

ΔR

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

t

d(ON)

t

r

t

d(OFF)

t

f

V

SD

t

rr

Notes:

1. All D.C. parameters 100% tested at 25

2. All A.C. parameters sample tested.

Drain-to-source leakage current

- - 1.0 mA

VDS = 0.8 Max Rating,
VGS = -10V, TA = 125OC

Saturated drain-to-source current 150 - - mA VGS = 0V, V

Static drain-to-source on-state resistance - 17 25 Ω VGS = 0V, ID = 120mA

Change in R

with temperature - - 1.1 %/OC VGS = 0V, ID = 120mA

DS(ON)

Forward transconductance - 325 - mmho VDS = 10V, ID = 100mA

Input capacitance - 200 300

Common source output capacitance - 12 30

Reverse transfer capacitance - 1.0 5.0

pF

VGS = -10V,
VDS = 25V,
f = 1.0MHz

Turn-on delay time - - 10

Rise time - - 15

Turn-off delay time - - 15

ns

VDD = 25V,
ID = 150mA,
R

= 25Ω,

GEN

Fall time - - 20

Diode forward voltage drop - - 1.8 V VGS = -10V, ISD = 120mA

Reverse recovery time - 800 - ns VGS = -10V, ISD = 1.0A

O

C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

DS

= 0V

DS

= 25V

Switching Waveforms and Test Circuit

90%

INPUT

10%

-10V

VDD

OUTPUT

0V

Doc.# DSFP-DN2535
B062813

t

d(ON)

t

(ON)

10%

90%

t

(OFF)

t

r

t

d(OFF)

t

f

90%

10%

2

Pulse

Generator

R

GEN

INPUT

VDD

R

L

OUTPUT

D.U.T.

Supertex inc.

www.supertex.com

Typical Performance Curves

DN2535

0.5

0.4

0.3

(amperes)

0.2

D

I

0.1

0

0 80 160 240 320 400

Transconductance vs. Drain Current

0.5

0.4

0.3

Output Characteristics

V

V

= 10V

DS

DS

(volts)

= -55OC

T

A

25

O

C

V

GS

0.5V

0V

-0.5V

-1.0V

= 1.0V

250

200

150

(milliamps)

100

D

I

50

0

20

Saturation Characteristics

0 1 2 3 4 5

V

(volts)

DS

Power Dissipation vs. Case Temperature

T

= 25OC

A

TO-220

V

GS

0.5V
0V

-0.5V

-1.0V

= 1.0V

O

(seimens)

0.2

FS

G

0.1

0

0 50 100 150 200 250

(amperes)

I

D

125

Maximum Rated Safe Operating Area

1.0

TA = 25OC

0.1

TO-92 (DC)

(amperes)

D

I

0.01

TC = 25OC

0.001

1.0 10 100 1000

TO-92/TO-220 (pulsed)

TO-220 (DC)

V

(volts)

DS

10

C

(watts)

D

P

TO-92

0

0 25 50 75 100 125 150

TC (OC)

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

Thermal Resistance (normalized)

0

0.001 0.01 0.1 1.0 10

TO-220

T

= 25OC

C

P

D

= 15W

(seconds)

t

p

TO-92

= 25OC

T

C

= 1.0W

P

D

Doc.# DSFP-DN2535
B062813

Supertex inc.

3

www.supertex.com

Typical Performance Curves (cont.)

BV

Variation with Te mperature

V

GS

DSS

= -5.0V

1.10

On-Resistance vs. Drain Current

100

= 0V

V

GS

DN2535

1.05

1.00

80

60

(ohms)

(normalized)

0.95

DSS

BV

0.90

0.85

-50 0 50 100 150 0 80 160 240 320 400

T

(OC)

j

Transfer Characteristics

0.40

V

= 10V

DS

0.32

0.24

(amperes)

0.16

D

I

0.08

TA = -55OC

25OC

125

O

C

40

DSS(ON)

R

20

0

V

(th)

2.5

2.0

1.5

(normalized)

1.0

GS(th)

V

0.5

and R

ID (amperes)

Variation with Te mperature

DS

R

@ ID = 120mA

DS(ON)

V

GS(OFF)

@10µA

0

-3 -2 -1 0 1 2

V

GS (volts)

Capacitance vs. Drain-to-Source Voltage

200

150

100

C

ISS

f = 1MHz

V

GS

C (picofarads)

50

C

C

RSS

0

0 10 20 30 40

OSS

V

DS

(volts)

= -10V

0

-50 0 50 100 150

Tj (OC)

Gate Drive Dynamic Characteristics

15

10

5

(volts)

GS

V

0

-5

200pF

170pF

0 0.4 0.8 1.2 1.6 2.0

QG (nanocoulombs)

= 20V

V

DS

V

DS

= 40V

Doc.# DSFP-DN2535
B062813

Supertex inc.

4

www.supertex.com

3-Lead TO-92 Package Outline (N3)

D

Seating
Plane

1 2 3

L

DN2535

A

Front View

E1

1

Bottom View

e1

b

e

c

Side View

E

3

2

Symbol A b c D E E1 e e1 L

MIN .170 .014

Dimensions

(inches)

NOM - - - - - - - - -

MAX .210 .022

JEDEC Registration TO-92.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Doc.# DSFP-DN2535
B062813

†

†

.014

.022

†

.175 .125 .080 .095 .045 .500

†

.205 .165 .105 .105 .055 .610*

Supertex inc.

5

www.supertex.com

3-Lead TO-220 Package Outline (N5)

A

Seating

E

E2

ΦP

Q

H1

Plane

A

A1

DN2535

E

H1

D

D1

View

B

4

Chamfer

Optional

12

Front View View A - A

3

L

A2

e

c

A

Side View

1

3

2

Thermal

Pad

L1

D1

E1

bb2

View B

Symbol A A1 A2 b b2 c D D1 D2 E E1 E2 e H1 L L1 Q ΦP

†

Dimen-

sion

(inches)

JEDEC Registration TO-220, Variation AB, Issue K, April 2002.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.
Supertex Doc. #: DSPD-3TO220N5, Version C041009.

MIN .140 .020 .080 .015 .045 .012

NOM - - - .027 .057 - - - - - - - - - - - -

MAX .190 .055 .120†.040 .070 .024 .650 .361†.507 .420 .350 .030 .270 .580 .250 .135 .161

.560 .326†.474†.380 .270 0.20*

.230 .500 .200* .100 .139

.100

BSC

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.

Doc.# DSFP-DN2535
B062813

6

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: [phone]

www.supertex.com