ST Microelectronics ZB32C2 User Manual
SPZB32W1A2.1 / SPZB32W1C2.1
IEEE 802.15.4 Module
Tentative
FEATURES
• Integrated 2.4GHz , IEEE 802.15.4-compliant
transceiver
• 3 dBm nominal TX output power
• -99 dBm RX sensitivity
• RX filtering for co-existence with IEEE
802.11g and Bluetooth devices
• Integrated VCO and loop filter
• Integrated IEEE 802.15.4 PHY and MAC
• 128kB Embedded flash and 8kB integrated RAM
for program and data storage
• 22 GPIO with alternate functions:
• GPIOs
• UART
• I2C
• SPI
• ADC
• 2 16-bit general purpose timers; one 16-bit sleep
timer
• ADC , sigma-delta converter with 12 bi t resolution
• On board 24 MHz stable Xtal
• Selectable Integrated RC oscillator ( typ 10KHz)
or 32.768kHz Xtal for low power operation
• 0.8 uA typ power consumption in D e ep sleep
mode
• Watchdog timer and power on reset
• Pins available for Non-intrusive debug interface
(SIF)
• Integrated Antenna (SPZB32W1A2.1) or
integrated RF UFL connector for external antenna
(SPZB32W1C2.1)
• Single voltage supply
• FCC and CE compliant
• Small Form Factor : 16.4 x 26.5 mm
APPLICATIONS
• Industrial controls
• Sensor Networking
• Monitoring of remote systems
• Home/Building Automation
• Security systems
• Lighting controls
DESCRIPTION
SPZB32W1A2.1 / SPZB32W1C2.1 are ready-to-use
ZigBee ® modules optimized for embedded applications
requiring short range performances. These highperformance, very compact modules enable OEMs to easily
add short range reach wireless capability to electronic
devices by optimizing time-to-market, cost and size of their
target applications.
The modules are based on STM32W single chip ZigBee®
solution which integrates a 2.4GHz, IEEE 802.15.4compliant transceiver together with an embedded
processor.
24 MHz high stability Xtal is available aboard the modules
to perform the timing requirements as per ZigBee ®
specifications; additionally a 32.768kHz Xtal is provided
for low power operation.
A single supply voltage is requested to power the modules.
An innovative 2.5 GHz RF design and the relevant i nternal
RF Amplifier aboard ensure the optimal exploitation of the
link budget, an excellent sensitivity and still low power
consumption for battery powered operation.
The voltage supply also determines the I/O ports level
allowing an easy interface with additional peripherals.
A 128kB of embedded flash mem or y and 8kB of RAM are
available for data and program stora ge.
To support user defined applications, a number of
peripherals such as GPIO,UART,I2C, A DC and general
purpose timers are available and user selectable.
Modules are available with two different antenna options:
• SPZB32W1A2.1 with integrated ceramic
antenna aboard
• SPZB32W1C2.1 with UFL RF connector for
the connection of an external antenna.
(for details on STM32W refer to the related Datasheet )
SPZB32W1A2.1 / SPZB32W1C2.1
Contents
1 Block diagram ……………………………………………………………………………. 3
2 Pin Configuration …………………………………………………………………………3
3 Electrical Characteristics ………………………………………………………………. 4
3.2 Recommended Operating Conditions
3.3 DC Electrical characteristics
3.4 Digital I/O Specifications
3.5 RF Electrical characteristics
4 Pins Description …………………………………………………………………………5
5 Mechanical Dimensions ………………………………………………………………….. 8
6 Soldering ………………………………………………………………………………….. 9
7 Appendix A - FCC Statement ..……………………………………………………… 10
3.1 Absolute Maximum Ratings …………………………………………………………… 4
……..…………………………………………… 4
…………………………………………………………… 4
…………………………………………………………….. 4
…………………………………………………………… 4
2/12
1-BLOCK DIAGRAM
Vdd
SIF
GPIO
CONTR SIGN
Vdd
SIF
GPIO
CONTR SIGN
2-PIN CONFIGURATION
SPZB32W1A2.1 / SPZB32W1C2.1
32.768 kHz
Xtal
STM32W
Tranceiver
Figure 1. SPZB32W1A2.1 Block diagram
32.768 kHz
Xtal
STM32W
Tranceiver
Figure 2. SPZB32W1C2.1 Block diagram
24 MHz
Xtal
balun
BPF
24 MHz
Xtal
balun
BPF
RF
antenna
RF
antenna
Figure3. Pin configuration
3/12
SPZB32W1A2.1 / SPZB32W1C2.1
3 – ELECTRICAL CHARACTERISTICS
3.1 - ABSOLUTE MAXIMUM RATINGS
Table 1. Absolute maximum ratings
Symbol Parameter Min Max Unit
VDD Module supply voltage - 0.3 3.6 V
Vin Input voltage on any digital pin - 0.3 Vdd + 0.3 V
Tstg Storage tempeature -40 +85 °C
Tsold. Soldering temperature < 10s 250 °C
3.2 - RECOMMENDED OPERATING CONDITIONS
Table 2. Recommended operating condition s
Symbol Parameter Conditions Min Typ Max Unit
VDD Module supply voltage -40°C < T < +85 C 2.8 3.3 3.6 V
Tstg Operating ambient temperature -40 +85 °C
3.3 - DC ELECTRICAL CHARACTERISTICS
Table3. DC Electrical Characteristics
Symbol Parameter Conditions Min Typ Max Unit
IRX RX current Vdd = 3.3 V T= 25 °C 28 mA
ITX TX current Po = 3 dBm Vdd = 3.3 V T= 25 °C
IDS Deep Sleep Current (32.768kHz
oscillator)
F=2450 Mhz
Vdd = 3.3 V T = 25°C 1.3
32 mA
µΑ
3.4 - DIGITAL I/O SPECIFICATIONS
Table 4. Digital I/O Specifications
Symbol Parameter Conditions Min Typ Max Unit
VIL Low Level Input Voltage 2.8 < Vdd < 3.6 V 0 0.5 x
VIH H igh level input voltage 2.8 < Vdd < 3.6 V 0.62 x Vdd Vdd V
Iil Input current for logic 0 2.8 < Vdd < 3.6 V -0.5
Iih Input current for logic 1 2.8 < Vdd < 3.6 V 0.5
Ripu Input pull-up resistor 30
Ripd Input pull-down resistor 30
VOL Low level output voltage 0 0.18 x
VOH High level output voltage 0.82 x Vdd Vdd V
IOHS Output source current (standard ) 4 mA
IOLS Output sink current (standard) 4 mA
IOHH Output source current (high current) 8 mA
IOLH Output sink current (high current) 8 mA
IOTot Total output current for I/O 40 mA
Vdd
µΑ
µΑ
κΩ
κΩ
Vdd
3.5 - RF ELECTRICAL CHARACTERISTICS
Table 5. RF Electrical Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Frequency range Vdd = 3.3 V T= 25 °C 2405 2480 MHz
TX Output power Vdd = 3.3 V T= 25 °C 3 6 dBm
RX Sensitivity Vdd = 3.3V 1% PER -95 - 97 dBm
CFE Carrier frequency error Vd d= 3.3V -40 / + 85 °C
Adjacent channel rejection +/- 5 MHz
+/- 10 MHZ
- t.b.d. t.b.d. ppm
35
40
dBm
V
V
4/12
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