ST MICROELECTRONICS Z0402MF 1AA2 Datasheet

Standard

Z04

4 A Triacs

Main features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
4A
600 to 800 V
3 to 25 mA
Description
The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,...
Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers.
A2
G
A1
A1
A2
G
TO202-3
Order codes
Part Number Marking
Z04xxyF
(1)
Z04xxyF
(1)
1. xx = sensitivity, y = voltage

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit
T
= 25° C
I
T(RMS)
I
TSM
²
I
tI
dI/dt
I
GM
P
G(AV)
T
stg
T
j
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current (full cycle, T
²
t Value for fusing tp = 10 ms 2.2 A²s
initial = 25° C)
j
Critical rate of rise of on-state current I 2 x I
, tr 100 ns
GT
F = 50 Hz t = 20 ms 20
F = 60 Hz t = 16.7 ms 21
=
G
F = 120 Hz Tj = 125° C 20 A/µs
Peak gate current tp = 20 µs Tj = 125° C 1.2 A
Average gate power dissipation Tj = 125° C 0.2 W
Storage junction temperature range Operating junction temperature range
amb
= 30° C
T
l
4A
A
- 40 to + 150
- 40 to + 125
° C
May 2006 Rev 7 1/8
www.st.com
8
Characteristics Z04

1 Characteristics

Table 2. Electrical Characteristics (Tj = 25° C, unless otherwise specified)
Z04
Symbol Test Conditions Quadrant
02 05 09 10
Unit
I
GT
(1)
I - II - III - IV
MAX
.
351025mA
VD = 12 V RL = 30
V
GT
V
I
H
I
dV/dt
(dV/dt)c
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.

Table 3. Static Characteristics

VD = V
GD
T
= 125° C
j
(2)
IT = 50 mA
IG = 1.2 I
L
(2)
VD = 6 % V
(2)
(dI/dt)c = 1.8 A/ms Tj = 110° C MIN. 0.5 1 2 5 V/µs
RL = 3.3 k
DRM
GT
DRM
gate open Tj = 110° C MIN. 10 20 100 200 V/µs
ALL
ALL MIN. 0.2 V
I - III - IV
II 12 15 25 50
MAX
.
MAX
.
MAX
.
1.3 V
351025mA
6101525
Symbol Test Conditions Value Unit
(1)
V
TM
V
to
R
d
I
DRM
I
RRM
1. for both polarities of A2 referenced to A1.

Table 4. Thermal resistances

ITM = 5.5 A tp = 380 µs Tj = 25° C MAX. 2.0 V
(1)
Threshold voltage Tj = 125° C MAX. 0.95 V
(1)
Dynamic resistance Tj = 125° C MAX. 180 m
Tj = 25° C
V
DRM
= V
RRM
T
= 125° C 0.5 mA
j
MAX.
A
mA
Symbol Parameter Value Unit
R
R
th(j-I)
th(j-a)
Junction to lead (AC) 15 ° C/W
Junction to ambient 100 ° C/W
2/8
Z04 Characteristics
Figure 1. Maximum power dissipation
versus RMS on-state current (full cycle)
P(W)
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I (A)
T(RMS)
Figure 3. Relative variation of thermal
impedance versus pulse duration
K=[Z /R
1E+0
1E-1
1E-2
1E-3
th(j-a) th(j-a)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
]
t (s)
p
Figure 2. RMS on-state current versus
ambient temperature (full cycle)
I (A)
T(RMS)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
R = 100°C/W
th(j-a)
0 25 50 75 100 125
R=
th(j-a)Rth(j-l)
T (°C)
amb
Figure 4. Relative variation of gate trigger
current, holding current and latching current versus junction temperature (typical values)
I,I,I[T] /
GTHL j
2.5
2.0
1.5
IH&I
1.0
0.5
0.0
-40 -20 0 20 40 60 80 100 120 140
L
I , I , I [T =25°C]
GTHL j
I
GT
T (°C)
j
Figure 5. Surge peak on-state current
versus number of cycles
I (A)
TSM
25
20
15
10
5
0
Repetitive
T = 25°C
amb
1 10 100 1000
Non repetitive
T initial = 25°C
j
Number of cycles
t=20ms
One cycle
Figure 6. Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t value of I
TSM
dI/dt limitation:
22
20A/µs
I (A), I t (A s)
500
100
10
1
0.01 0.10 1.00 10.00
3/8
< 10 ms and corresponding
p
2
t
T initial = 25°C
j
I
TSM
2
t (ms)
p
It
Characteristics Z04
Figure 7. On-state characteristics
(maximum values)
I (A)
TM
20.0
10.0
T = max.jT
j
1.0
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C
j
V (V)
TM
Figure 9. Relative variation of critical
rate of decrease of main current versus junction temperature
(dI/dt)c [T ] / Specified]
6
5
4
3
2
1
0
0 25 50 75 100 125
(dI/dt)c [T
j
j
T (°C)
j
T=max.
j
V =0.95 V
t0
R =180 m
d
Figure 8. Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1.0 10.0 100.0
Z0402
Z0405
(dV/dt)c (V/µs)
Z0410
Z0409
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Z04 Ordering information scheme

2 Ordering information scheme

Triac series
Current
04 = 4A
Sensitivity
02 = 3mA 05 = 5mA 09 = 10mA 10 = 25mA
Voltage
M = 600V S = 700V N = 800V
Package
F = TO202-3
Packing mode
0AA2 = Tube

Table 5. Product selector

Z 04 xx y F 0AA2
[BLANK]
Voltag e
Part Number
Sensitivity Type Package
600 V 700 V 800 V
Z0402MF X 3 mA
Z0402SF X 3 mA
Z0402NF X 3 mA
Z0405MF X 5 mA
Z0405SF X 5 mA
Z0405NF X 5 mA
Z0409MF X 10 mA
Z0409SF X 10 mA
Z0409NF X 10 mA
Z0410MF X 25 mA
Z0410SF X 25 mA
Z0410NF X 25 mA
Standard TO202-3
5/8
Package information Z04

3 Package information

DIMENSIONS
REF.
A 10.1 0.398
A
C
O
F
P
N1
N
J
D
H
M
C7.3 0.287
D 10.5 0.413
F 1.5 0.059
H 0.51 0.020
J1.5 0.059
M4.5 0.177
N 5.3 0.209
N1 2.54 0.100
O 1.4 0.055
P 0.7 0.028
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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Z04 Ordering information

4 Ordering information

Ordering type Marking Weight Base qty Delivery mode
Z04xxyF 0AA2
1. xx = sensitivity, y = voltage
(1)
Z04xxyF
(1)
0.8 g 50 Tube

5 Revision history

Date Revision Description of Changes
Oct-2001 4 Last update.
13-Feb-2006 5
31-Mar-2006 6
12-05-2006 7 Typographical error for (dV/dt)c corrected in Table 2.
TO202-3 delivery mode changed from bulk to tube. ECOPACK statement added.
Reformatted to current standard. Lead marking changed on page 1
7/8
Z04
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