Features
D2PAK
PowerSO-10
TO-220
1
3
1
10
1
2
3
Type R
VNB35NV04-E
VNP35NV04-E
VNV35NV04-E
DS(on)
10 mΩ
VNB35NV04-E, VNP35NV04-E,
VNV35NV04-E
OMNIFET II: fully autoprotected Power MOSFET
Datasheet - production data
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the Power
MOSFET (analog driving)
• Compatible with standard Power MOSFET
Description
The VNB35NV04-E, VNP35NV04-E and
(1)
I
lim
30 A 40 V
V
clamp
VNV35NV04-E are monolithic devices designed
in STMicroelectronics
Technology , intended for replacement of standard
Power MOSFETs from DC up to 25 kHz
applications.
Built-in th erma l shut d own, line ar cur re nt li mit ati on
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
®
VIPower® M0-3
1. For PowerSO-10 only
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
Table 1. Device summary
Package
D2PAK VNB35NV04-E VNB35NV04TR-E
TO-220 VNP35NV04-E —
PowerSO-10 VNV35NV04-E VNV35NV04TR-E
February 2015 DocID023550 Rev 5 1/27
This is information on a product in full production.
Order codes
Tube Tape and reel
www.st.com
Contents VNB35NV04-E, VNP35NV04-E, VNV35NV04-E
Contents
1 Block diagram and pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.5 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1 ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.2 TO-220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3 PowerSO-10 mechanical d ata . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.4 D2PAK mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.5 TO-220 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.6 PowerSO-10 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2
3.7 D
PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2/27 DocID023550 Rev 5
VNB35NV04-E, VNP35NV04-E, VNV35NV04-E List of tables
List of tables
Table 1. Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Off. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. On. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 7. Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 8. Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . 8
Table 10. TO-220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 11. PowerSO-10 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 12. D2PAK mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 13. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
DocID023550 Rev 5 3/27
3
List of figures VNB35NV04-E, VNP35NV04-E, VNV35NV04-E
List of figures
Figure 1. Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Test circuit for diode recovery times. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7. Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 8. Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 9. Thermal impedance for TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 10. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 11. Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12. PowerSO-10 static drain-source on resistance vs. input voltage . . . . . . . . . . . . . . . . . . . . 13
Figure 13. D
Figure 14. PowerSO-10 static drain-source on resistance vs. id. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 15. D
Figure 16. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 17. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 18. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 19. Normalized on resistance vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 20. Turn-on current slope, V
Figure 21. Turn-on current slope, V
Figure 22. Input voltage vs. input charge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 23. Turn off drain source voltage slope, V
Figure 24. Turn off drain-source voltage slope, V
Figure 25. Switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 26. Switching time resistive load (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 27. Normalized input threshold voltage vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 28. Current limit vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 29. Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 30. Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 31. TO-220 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 32. PowerSO-10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 33. D2PAK package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 34. TO-220 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 35. PowerSO-10 suggested pad layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 36. Tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 37. Tape and reel shipment (suffix “13TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 38. D
Figure 39. Tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 40. Tape and reel shipment (suffix “13TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
2
PAK and TO-220 static drain-source on resistance vs. input voltage. . . . . . . . . . . . . . . 13
2
PAK and TO-220 static drain-source on resistance vs. id . . . . . . . . . . . . . . . . . . . . . . . 13
= 5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
IN
= 3.5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
IN
= 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
IN
= 3.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
IN
2
PAK footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
4/27 DocID023550 Rev 5
VNB35NV04-E, VNP35NV04-E, VNV35NV04-E Block diagram and pin connection
Overvoltage
Gate
Linear
DRAIN
SOURCE
Clamp
1
2
3
Current
Limiter
Control
Over
Temperature
INPUT
1
2
3
4
5
6
7
8
9
10
11
SOURCE
SOURCE
N.C.
SOURCE
SOURCE
INPUT
INPUT
INPUT
INPUT
INPUT
DRAIN
1 Block diagram and pin connection
Figure 1. Block diagram
Figure 2. Pin connection
1. For the pins configuration related to TO-220, D2PAK, see Figure 1.
DocID023550 Rev 5 5/27
26
Electrical specification VNB35NV04-E, VNP35NV04-E, VNV35NV04-E
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN
2 Electrical specification
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Table 2 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to the conditions in table below for extended periods may affect device reliability
Symbol Parameter
V
V
R
IN MIN
V
ESD1
V
ESD2
P
T
Drain-source voltage (VIN= 0 V) Internally clamped V
DS
Input voltage Internally clamped V
IN
I
Input current +/-20 mA
IN
Minimum input series impedance 4.7 Ω
I
Drain current Internally limited A
D
I
Reverse DC output current -30 A
R
Electrostatic discharge (R = 1.5 KΩ,
C = 100 pF)
Electrostatic discharge on output pin only
(R = 330 Ω, C = 150 pF)
Total dissipation at Tc= 25°C 125 125 125 W
tot
T
Operating junction temperature Internally limited °C
j
T
Case operating temperature Internally limited °C
c
Storage temperature -55 to 150 °C
stg
Table 2. Absolute maximum ratings
PowerSO-10 D2PAK TO-220
Value
Unit
4000 V
16500 V
6/27 DocID023550 Rev 5
VNB35NV04-E, VNP35NV04-E, VNV35NV04-E Electrical specification
2.2 Thermal data
Table 3. Thermal data
Symbol Parameter
R
thj-case
R
thj-amb
1. When mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 mm thick) connected
to all DRAIN pins.
Thermal resistance junction-case (max) 1 1 1 °C/W
Thermal resistance jun c tion-ambient (max) 50
2.3 Electrical characteristics
-40°C < Tj< 150°C, unless otherwise specified.
Symbol Parameter Test conditions Min Typ Max Unit
V
CLAMP
V
V
I
Drain-source clamp
voltage
Drain-source clamp
CLTH
threshold voltage
Input threshold voltage VDS=VIN; ID=1mA 0.5 2.5 V
INTH
Supply current from input
ISS
pin
V
VIN=0V; ID=2mA 36 V
VDS=0V; VIN=5V 100 150 μA
Value
PowerSO-10 D
(1)
2
PAK TO-220
(1)
50
50 °C/W
Table 4. Off
=0V; ID= 15 A 40 45 55 V
IN
Unit
=1mA 6 6.8 8 V
I
V
I
Input-source clamp
INCL
voltage
Zero input voltage drain
DSS
current (V
IN
=0V)
IN
I
= -1 mA -1.0 -0.3 V
IN
=13V; VIN=0V;
V
DS
=25°C
T
j
=25V; VIN=0V 75 μA
V
DS
Table 5. On
Symbol Parameter Test conditions
=5V; ID=15A; Tj=25°C 10 13 mΩ
V
R
DS(on)
Static drain-source
on resistance
IN
V
=5V; ID=15A; Tj= 150 °C 20 24 mΩ
IN
Max
PowerSO-10
30 μA
2
PAK
D
TO-220
Unit
DocID023550 Rev 5 7/27
26
Electrical specification VNB35NV04-E, VNP35NV04-E, VNV35NV04-E
Tj= 25°C, unless otherwise specified.
Symbol Parameter Test conditions Min Typ Max Unit
Forward
(1)
g
fs
transconductance
C
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
Output capacitance VDS=13V; f=1MHz; VIN= 0 V — 1300 — pF
OSS
Table 6. Dynamic
=13V; ID=15A — 35 — S
V
DD
Table 7. Switching
Symbol Parameter Test conditions Min Typ Max Unit
—150500ns
—412μs
—18 A/μs
— 1 18 nC
(di/dt)
t
d(on)
t
d(off)
t
d(on)
t
d(off)
Turn-on delay time
VDD=15V; ID=15A;
t
Rise time — 840 2500 ns
r
Turn-of f del ay time — 980 3000 ns
t
Fall time — 600 1500 ns
f
=5V;
V
gen
R
gen=RIN MIN
Figure 3)
=4.7Ω (see
Turn-on delay time
V
=15V; ID=15A;
Rise time — 27 100 μs
t
r
Turn-of f del ay time — 34 120 μs
t
Fall time — 31 110 μs
f
Turn-on current slope
on
Total input charge
Q
i
DD
V
gen
=5V; R
=2.2KΩ (see
gen
Figure 3)
VDD=15V; ID=15A;V
R
gen=RIN MIN
=12V; ID=15A; VIN=5V;
V
DD
= 2.13 mA (see Figure 8)
I
gen
=4.7Ω
gen
=5V;
Table 8. Source drain diode
Symbol Parameter Test Conditions Min Typ Max Unit
(1)
V
I
SD
Q
RRM
Forward on voltage ISD=15A; VIN=0V — 0.8 — V
t
Reverse recovery time
rr
Reverse recovery
rr
charge
Reverse recovery
current
I
= 15 A; dI/dt = 100 A/μs;
SD
= 30 V; L = 200 μH (see
V
DD
Figure 4)
—400— ns
—1.4—μC
—7—A
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5%
T able 9. Protections (-40°C < Tj< 150°C, unless otherwise specified)
Symbol Parameter Test Conditions Min Typ Max Unit
I
t
dlim
Drain current limit VIN=6V; VDS= 13 V 30 45 60 A
lim
Step response current
limit
VIN=6V; VDS=13V 50 μs
8/27 DocID023550 Rev 5
VNB35NV04-E, VNP35NV04-E, VNV35NV04-E Electrical specification
Table 9. Protections (-40°C < Tj< 150°C, unless otherwise specified) (continued)
Symbol Parameter Test Conditions Min Typ Max Unit
T
T
E
Overtemperature
jsh
shutdown
Overtemperature reset 135 °C
jrs
I
Fault Sink Current VIN=5V; VDS=13V; Tj=T
gf
Single pulse
as
avalanche energy
2.4 Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power MOSFET and can be used as a switch from
DC up to 25 KHz. The only difference from the user’s standpoint is that a small DC current
I
(typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry.
ISS
The device integrates:
• Overvoltage clamp protection:
internally set at 45 V, along with the rugged avalanche characteristics of the Power
MOSFET stage give this device unrivalled ruggedness and energy handling capability.
This feature is mainly important when driving inductive loads.
• Linear current limiter circuit:
limits the drain current I
limiter is active, the device operates in the linear region, so power dissipation may
exceed the capability of the heatsink. Both case and junction temperatures increase,
and if this phase lasts long enough, junction temperature may reach the
overtemperature threshol d T
• Overtemperature and short circuit protection:
these are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area
ensures fast, accurate detection of the junction temperature. Overtemperature cutout
occurs in the range 150°C to 190°C, a typical value being 170°C. The device is
automatically restarted when the chip temperature falls of about 15°C below shutdown
temperature.
• Status feedback:
in the case of an overtemperature fault condition (T
diagnostic current I
from a low impedance source, this current may be used in order to warn the control
circuit of a device shutdown. If the drive impedance is high enough so that the INPUT
pin driver is not able to supply the current I
however affect the device operation: no requirement is put on the current capability of
the INPUT pin driver except to be able to supply the normal operation drive current I
through the INPUT pin in order to indicate fault condition. If driven
gf
Starting T
V
IN
R
gen=RIN MIN
L = 24 mH (see Figure 6 and
Figure 7)
to I
D
lim
jsh
= 25°C; VDD=24V;
j
=5V;
=4.7Ω;
whatever the INPUT pin voltages is. When the current
.
gf
150 175 200 °C
10 15 20 mA
1.7 J
), the device tries to sink a
jsh
> T
j
jsh
, the INPUT pin falls to 0 V. This does not
ISS
.
DocID023550 Rev 5 9/27
26
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