ST MICROELECTRONICS VIPER318LDTR Datasheet

DRAIN

GND

VCC

UVPCOMP

CONTROL

FB

OVP

GND

V

OUT

C

OUT

R2

R1

C2

GND

C

IN

~ AC

R

IN

D

IN

VIPER31

C1

D

AUX

D1

L

OUT

D2

C3

Product status link

VIPER31

Product label

VIPER31

Datasheet

Energy saving offline high voltage converter

Features

• 800 V avalanche-rugged power MOSFET to cover ultra-wide VAC input range

• Embedded HV startup and sense FET

• Current mode PWM controller

• Drain current limit protection (OCP):

– 850 mA (VIPER318)

– 990 mA (VIPER319)

• Wide supply voltage range: 4.5 V to 30 V

– < 20 mW @ 230 VAC in no-load;

– < 430 mW @ 230 VAC, 25 0mW output load

• Jittered switching frequency reduces the EMI filter cost:

– 30 kHz ± 7% (X type)

– 60 kHz ± 7% (L type)

– 132 kHz ±7% (type H)

• Embedded E/A with 1.2 V reference

• Built-in soft-start for improved system reliability

• Protections with automatic restart:

– overload/short-circuit (OLP)

– thermal shutdown

– overvoltage

• Protections without automatic restart:

– pulse-skip protection to avoid flux runaway

– undervoltage/disable

– max. duty cycle

Application

• Low power SMPS for home appliances, home automation, industrial,
consumers, lighting

• Low power adapters

Description

The VIPER31 device is a high-voltage converter that smartly integrates an 800 V
avalanche rugged power MOSFET with PWM current-mode control..

The 800 V breakdown allows extended input voltage range to be applied, as well as
to reduce the size of the DRAIN snubber circuit. The IC can meet the most stringent
energy-saving standards as it has very low consumption and operates in pulse
frequency modulation at light load. Overvoltage and undervoltage protections with
separate and settable intervention thresholds are available at OVP and UVP pins
respectively. UVP can also be used as a disabling input for the entire SMPS, with
ultra-low residual input power consumption. Integrated HV startup, sense FET, error

DS13285 - Rev 2 - June 2020
For further information contact your local STMicroelectronics sales office.

amplifier and oscillator with frequency jitter allow a complete application to be
designed with a minimum component count.

Flyback, buck and buck boost topologies are supported.

www.st.com

1 Pin setting

GND

N.C.

OVP

N. A.

UVP

VCC

N. C.

N. C.

N. C.

N. C.

DRAIN

DRAIN

DRAIN

DRAIN

FB

COMP

VIPER31

Pin setting

Figure 1. Connection diagram

Table 1. Pin description

Pin

number

1 GND

2 N. C. Not connected. When designing the PCB, this pin can be soldered to GND.

3 VCC

4 N.A.

5 UVP

6 OVP

7

Name Function

Ground and MOSFET source. Connection of both the source of the internal MOSFET and the return of

the bias current of the device. All of the groundings of bias components must be tied to a trace going to
this pin and kept separate from the pulsed current return.

Controller Supply. An external storage capacitor has to be connected across this pin and GND. The
pin, internally connected to the high-voltage current source, provides the VCC capacitor charging current
at startup. A small bypass capacitor (0.1 μF typ.) in parallel, placed as close as possible to the IC, is also
recommended, for noise filtering purposes.

Not available for user. This pin is mechanically connected to the controller die pad of the frame. In order
to improve noise immunity, it is highly recommended to connect it to GND.

FB

Undervoltage Protection. If V
t
V
switching. The pin can be used to realize an input undervoltage protection or as a disabling input for the

entire SMPS, with ultra-low residual input power consumption. If the feature is not required, the pin must
be left open, which excludes the function.

Overvoltage protection. If VOVP exceeds the internal threshold V
t
the OVP condition is removed, after that it restarts switching with soft-start phase. OVP pin can be used

to realize an input overvoltage protection (or, in non-isolated topologies, an output overvoltage
protection).

If the feature is not required, the pin must be connected to GND, which excludes the function.

Direct feedback. It is the inverting input of the internal transconductance E/A, internally referenced to

1.2 V with respect to GND. In non-isolated converter, the output voltage information is directly fed into the
pin through a voltage divider. In primary regulation, the FB voltage divider is connected to the VCC. The
E/A is disabled if FB is connected to GND pin.

time (30 ms, typ.), the IC is disabled, and its consumption reduced to ultra-low values. When

UVP_DEB

rises above V

UVP

time (250 μsec, typ.), the PWM is disabled in auto-restart for t

OVP_DEB

UVP_th,

falls below the internal threshold V

UVP

the device waits for a t

UVP_REST

UVP_th

time interval (30 ms, typ.) then resumes

(4 V typ.) for more than

OVP_th

OVP_REST

(0.4 V typ.) for more than

(500 msec, typ.) until

DS13285 - Rev 2

page 2/40

VIPER31

Pin setting

Pin

number

8 COMP

9 to 12 N.C. Not connected. These pins must be left floating in order to get a safe clearance distance.

13 to 16 DRAIN

Name Function

Compensation. This is the output of the internal E/A. A compensation network is placed between this

pin and GND to achieve stability and good dynamic performance of the control loop. In case of
secondary feedback, the internal E/A must be disabled and the COMP directly driven by the optocoupler
to control the DRAIN peak current setpoint.

MOSFET drain. The internal high-voltage current source sources current from these pins to charge the
VCC capacitor at startup. The pins are mechanically connected to the internal metal PAD of the
MOSFET in order to facilitate heat dissipation. On the PCB, some copper areas under these pins
decreases the total junction-to-ambient thermal resistance thus facilitating the power dissipation.

DS13285 - Rev 2

page 3/40

2 Electrical and thermal ratings

Table 2. Absolute maximum ratings

Symbol

V

I

DRAIN

V

V

V

V

V

P

T

T

DS

CC

OVP

UVP

FB

COMP

TOT

J

STG

Drain-to- source (ground) voltage 800 V

Pulsed drain current (pulse-width limited by SOA) 3 A

VCC voltage -0.3 30.5V V

OVP voltage -0.3

UVP voltage -0.3

FB voltage -0.3

COMP voltage -0.3

Power Dissipation @ Tamb < 50°C

Junction Temperature operating range -40 150 °C

Storage Temperature -55 150 °C

1. stresses beyond those listed absolute maximum ratings may cause permanent damage to the device.

2. exposure to absolute-maximum-rated conditions for extended periods may affect the device reliability

3. by internal clamp between 4.75 V and 5.25 V or Vcc + 0.6 V, whichever is lower

4. the AMR value is intended when VCC ≥ 5 V, otherwise the value VCC + 0.3 V has to be considered.

5. when mounted on a standard single side FR4 board with 100 mm² (0.155² inch) of Cu (35 μm thick)

Parameter

(1)(2)

VIPER31

Electrical and thermal ratings

Min. Max. Unit

Internally
limited

Internally
limited

(4)

5

Internally
limited

(5)

1

V

(3)

V

(3)

V

V

(3)

W

Table 3. Thermal data

Parameter

(1)

(1)

(2)

(2)

R

R

R

R

Symbol

TH-JC

TH-JA

TH-JC

TH-JA

Thermal resistance junction to case

(dissipated power = 1W)

Thermal resistance junction to ambient

(dissipated power = 1W)

Thermal resistance junction to case

(dissipated power = 1W)

Thermal resistance junction to ambient

(dissipated power = 1W)

1. when mounted on a standard single side FR4 board with minimum copper area

2. when mounted on a standard single side FR4 board with 100mm² (0.155² inch) of Cu (35 μm thick)

Max. value

SO16N

10 °C/W

120 °C/W

5 °C/W

85 °C/W

Unit

DS13285 - Rev 2

page 4/40

0.750

0.875

1.000

1.125

1.250

1.375

1.500

0 25 50 75 100 125 150 175 200 225

A (mm2)

R

thJA

/(R

thJA

@ A = 100mm2)

VIPER31

Electrical characteristics

Figure 2. R

versus copper area

th_JA

Table 4. Avalanche characteristics

2.1

Symbol

I

AR

EAS

1. Parameter derived by characterization

Avalanche current

Single pulse avalanche energy

Electrical characteristics

Parameter Condition Min. Typ. Max. Unit

Repetitive and non-repetitive.

Pulse-width limited by T

Jmax

1.15 A

IAS = IAR,

(1)

V

DS

= 100 V,

3 mJ

Starting TJ = 25°C

Tj = -40 to 125°C, VCC = 9 V (unless otherwise specified)

Symbol

V

BVDSS

I

DSS

I

OFF

R

DS(on)

Parameter

Breakdown voltage

Drain-source leakage current

OFF state drain current

Static drain-source
ON‑resistance

Table 5. Power section

Test condition Min. Typ. Max. Unit

I

= 1 mA, V

DRAIN

TJ = 25°C

VDS = 400 V, V

TJ = 25°C

V

= max. rating,

DRAIN

V

= V

COMP

I

DRAIN

I

DRAIN

GND

= 400 mA, TJ = 25°C

= 400 mA, TJ = 125°C

= V

COMP

= V

COMP

, TJ = 25°C

GND

GND

,

800 V

,

1 µA

60 µA

3.5 Ω

7 Ω

DS13285 - Rev 2

page 5/40

VIPER31

Electrical characteristics

Table 6. Supply section

Symbol Parameter Test condition Min. Typ. Max. Unit

High-voltage startup current source

V

BVDSS_SU

V

HV_START

R

G

I

CH1

I

CH2

IC supply and consumptions

V

CC

V

Ccon

V

Cson

V

Ccoff

I

q

I

CC

Breakdown voltage of startup
MOSFET

TJ = 25°C

800 V

Drain-source startup voltage 24 V

Startup resistor

V

charging current at startup V

CC

VCC charging current

VFB > V

V

DRAIN

V

DRAIN

DRAIN

VFB > V

1V < VCC <V

,

FB_REF

= 400 V,

= 600 V

= 100V, V

, V

FB_REF

CCon

≤ 1V

CC

DRAIN

36 45 54 MΩ

0.5 1 1.5

= 100V

7.6 8.8 10

Operating voltage range 4.5 30 V

VCC startup threshold 7.5 8 8.5 V

HV current source turn-on
threshold

V

CC

falling

4 4.25 4.5 V

UVLO 3.75 4 4.25 V

Quiescent current

Operating supply current,
switching

Not switching,

VFB > V

FB_REF

VDS = 150 V, V
F

= 30 kHz

OSC

VDS = 150 V, V
F

= 60 kHz

OSC

V

= 150 V, V

DS

F

= 132 kHz

OSC

X, L versions 0.35

H version 0.48

= 1.2 V,

COMP

= 1.2 V,

COMP

= 1.2 V,

COMP

1.25 1.7

1.5 2

2.25 2.8

mA

mA

mA

Note: 1. Current supplied only during the main MOSFET OFF time.

2. Parameter assured by design and characterization.

DS13285 - Rev 2

page 6/40

VIPER31

Electrical characteristics

Table 7. Controller section

Symbol Parameter Test condition Min. Typ. Max. Unit

E/A

V

FB_REF

V

FB_DIS

I

FB_PULL UP

G

M

I

COMP1

Reference voltage 1.175 1.2 1.225 V

E/A disable voltage 150 180 210 mV

Pull-up current 0.9 1 1.1 µA

V

=1.5 V,

Trans conductance

Max. source current

COMP

V

FB >VFBREF

V

=1.5 V,

COMP

VFB =0.5 V

400 550 700 µA/V

75 100 125 µA

I

COMP2

R

COMP(DYN)

V

COMPH

V

COMPL

H

COMP

OLP and timing

I

DLIM

2

I

f

I

Dlim_PFM

t

OVL

t

OVL_max

t

SS

t

ON_MIN

t

RESTART

UVP

V

UVP_th

Max. sink current

Dynamic resistance

V

COMP

V

COMP

V

FB =GND

=1.5 V

=2.7 V,

75 100 125 µA

13 15 17 kΩ

Current limitation threshold 2.75 3.1 3.45 V

PFM threshold 0.6 0.8 1 V

VFB=2 V,

ΔV

/ΔI

COMP

DRAIN

Drain current limitation

Power coefficient

I

DLIM_TYP

2

x F

OSC_TYP

Drain current limitation at light load

VIPER318* 3.2 3.5 3.8

VIPER319* 2.9 3.2 3.5

TJ= 25°C , VIPER318*

TJ= 25°C , VIPER319*

VIPER318*

VIPER319*

(1)

(1)

VIPER318L

VIPER318H 95.4

810 850 890

940 990 1040

765 850 935

891 990 1089

43.4

-10%

+10%

VIPER319X 29.4

TJ=25°C, V

VIPER318*

TJ=25°C, V

VIPER319*

COMP=VCOMPL

(1)

COMP=VCOMPL

(1)

(2)

100 130 160

(2)

120 150 180

V/A

mA

A2·kHz

mA

Overload delay time 45 50 55 ms

Max. overload delay time When in pulse skipping 100 ms

Soft-start time 6 8 10 ms

VCC=9 V,

V

Minimum turn-on time

COMP

VFB=V

=1 V,

FB_REF

250 300 350 ns

Restart time after fault 0.75 1 1.25 s

VCC =9 V,

UVP threshold

V

COMP

=1 V,

0.38 0.4 0.42 V

DS13285 - Rev 2

page 7/40

VIPER31

Electrical characteristics

Symbol Parameter Test condition Min. Typ. Max. Unit

V

FB=VFB_REF

I

UVP_pull- up

t

UVP_DEB

t

UVP_REST

I

q_DIS

OVP

V

OVP_th

t

OVP_DEB

t

OVP_REST

Oscillator

F

OSC

F

OSC MIN

F

D

F

M

D

MAX

T

SD

1. Measured at Vin = 100 Vdc in Flyback topology, with 1.5 mH transformer primary inductance

2. See Section 4.10 Pulse frequency modulation

3. See Section 4.7 Pulse skipping

4. Parameter assured by design and characterization.

UVP pull-up current -1 µA

Debounce time before UVP tripping 22.5 30 37.5 ms

Debounce time for restoring normal
operation from UVP

Quiescient current during UVP

Not switching, VFB>V

FB_REF

22.5 30 37.5 ms

0.25 0.35 mA

VCC=9 V,

V

Overvoltage protection threshold

COMP

VFB=V

=1 V,

FB_REF

3.85 4 4.15 V

Debounce time before OVP tripping 188 250 312 µs

Restart time after overvoltage
protection tripping

Switching frequency

Min. switching frequency

Modulation depth

Modulation frequency

Max. duty cycle

TJ =25ºC VIPER31*X

TJ = 25ºC, VIPER31*L

TJ = 25ºC, VIPER31*H

TJ= 25ºC

(4)

(4)

(4)

(3)

375 500 625 ms

27 30 33

54 60 66

119 132 145

13.5 15 16.5 kHz

±7·F

OSC

200 Hz

70 80 %

Thermal shutdown protection

Thermal shutdown temperature
threshold

(4)

150 160 °C

kHz

%

DS13285 - Rev 2

page 8/40

3 Typical electrical characteristics

0.8

0.9

1

1.1

1.2

-50 -25 0 25 50 75 100 125 150

I

DLIM

/(I

DLIM

@25°C)

Tj[°C]

0.9

0.95

1

1.05

1.1

-50 -25 0 25 50 75 100 125 150

F

OSC

/(F

OSC

@25°C)

Tj[°C]

0.8

0.9

1

1.1

1.2

-50 -25 0 25 50 75 100 125 150

V

HV_START

/(V

HV_START

@25°C)

Tj[°C]

0.95

0.975

1

1.025

1.05

-50 -25 0 25 50 75 100 125 150

V

FB_REF

/(V

FB_REF

@25°C)

Tj[°C]

0.9

0.95

1

1.05

1.1

-50 -25 0 25 50 75 100 125 150

Iq/(Iq@25°C)

Tj[°C]

0.8

0.9

1

1.1

1.2

-50 -25 0 25 50 75 100 125 150

ICC/(ICC@25°C)

Tj[°C]

VIPER31

Typical electrical characteristics

Figure 3. I

Figure 5. V

vs. T

DLIM

HV_START

J

vs. T

Figure 4. F

J

Figure 6. VF

OSC

B_REF

vs. T

vs. T

J

J

Figure 7. Quiescent Current Iq vs. T

DS13285 - Rev 2

J

Figure 8. Operating current ICC vs. T

J

page 9/40

0.5

0.7

0.9

1.1

1.3

1.5

-50 -25 0 25 50 75 100 125 150

I

CH1

/(I

CH1

@25°C)

Tj[°C]

0.8

0.9

1

1.1

1.2

-50 -25 0 25 50 75 100 125 150

I

CH2

/(I

CH2

@25°C)

Tj[°C]

0.9

0.95

1

1.05

1.1

0 100 200 300 400 500 600 700 800

I

CH1

/(I

CH1@VDRAIN

= 100V)

V

DRAIN

[V]

0.9

0.95

1

1.05

1.1

0 100 200 300 400 500 600 700 800

I

CH2

/(I

CH2@VDRAIN

=100V)

V

DRAIN

[V]

0.8

0.9

1

1.1

1.2

-50 -25 0 25 50 75 100 125 150

GM/(GM@25°C)

Tj[°C]

0.9

0.95

1

1.05

1.1

-50 -25 0 25 50 75 100 125 150

I

COMP

/(I

COMP

@25°C)

Tj[°C]

VIPER31

Typical electrical characteristics

Figure 9. I

Figure 11. I

CH1

CH1

vs. V

vs. T

J

DRAIN

Figure 10. I

Figure 12. I

CH2

CH2

vs. T

vs. V

J

DRAIN

Figure 13. GM vs. T

DS13285 - Rev 2

J

Figure 14. I

COMP

vs. T

J

page 10/40

0.00

0.50

1.00

1.50

2.00

2.50

-50 -25 0 25 50 75 100 125 150

Tj[°C]

R

DS(on)

/(R

DS(on)

@25°C)

0

0.5

1

1.5

0 50 100 150 200 250 300 350 400

I

[mA]

R

DS(on)

/(R

DS(on)@IDRAIN

= 360mA)

T = 25°C

1

10

100

1000

10000

0 1 10 100 1000

VDS[V]

C

OSS

[pF]

0.88

0.92

0.96

1

1.04

1.08

1.12

-50 0 50 100 150
TJ[°C]

V

(BR)DSS

/ (V

(BR)DSS

@ 250C)

ID= 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

4.8

0.0 4.0 8.0 12.0 16.0 20.0

VDS[V]

I

DRAIN

[A]

-40°C

25°C

125°C

VIPER31

Typical electrical characteristics

Figure 15. R

DSON

vs. T

J

Figure 17. Static drain-source on resistance

Figure 16. R

Figure 18. Power MOSFET C

vs. I

DSON

OSS

DRAIN

vs. VDS @ VGS=0, f=1MHz

Figure 19. V

DS13285 - Rev 2

BVDSS

vs. T

J

Figure 20. Output characteristic

page 11/40

0.01

0.1

1

10

0.1 1 10 100 1000 10000

VDS[V]

ID[A]

tp= 1 ms

tp= 10 ms

tp= 1 ms

R

DS(on)

limit

tp= 100 ms

0

1

2

3

4

-50 0 50 100 150
Tj[°C]

EAS[mJ]

Single pulse,

ID= 1A, VDD= 50 V

VIPER31

Typical electrical characteristics

Figure 21. SOA SO16N package

Figure 22. Maximum avalanche energy vs. Tj

DS13285 - Rev 2

page 12/40