DRAIN
GND
VCC
UVPCOMP
CONTROL
FB
OVP
GND
V
OUT
C
OUT
R2
R1
C2
GND
C
IN
~ AC
R
IN
D
IN
VIPER31
C1
D
AUX
D1
L
OUT
D2
C3
Product status link
VIPER31
Product label
VIPER31
Datasheet
Energy saving offline high voltage converter
Features
• 800 V avalanche-rugged power MOSFET to cover ultra-wide VAC input range
• Embedded HV startup and sense FET
• Current mode PWM controller
• Drain current limit protection (OCP):
– 850 mA (VIPER318)
– 990 mA (VIPER319)
• Wide supply voltage range: 4.5 V to 30 V
– < 20 mW @ 230 VAC in no-load;
– < 430 mW @ 230 VAC, 25 0mW output load
• Jittered switching frequency reduces the EMI filter cost:
– 30 kHz ± 7% (X type)
– 60 kHz ± 7% (L type)
– 132 kHz ±7% (type H)
• Embedded E/A with 1.2 V reference
• Built-in soft-start for improved system reliability
• Protections with automatic restart:
– overload/short-circuit (OLP)
– thermal shutdown
– overvoltage
• Protections without automatic restart:
– pulse-skip protection to avoid flux runaway
– undervoltage/disable
– max. duty cycle
Application
• Low power SMPS for home appliances, home automation, industrial,
consumers, lighting
• Low power adapters
Description
The VIPER31 device is a high-voltage converter that smartly integrates an 800 V
avalanche rugged power MOSFET with PWM current-mode control..
The 800 V breakdown allows extended input voltage range to be applied, as well as
to reduce the size of the DRAIN snubber circuit. The IC can meet the most stringent
energy-saving standards as it has very low consumption and operates in pulse
frequency modulation at light load. Overvoltage and undervoltage protections with
separate and settable intervention thresholds are available at OVP and UVP pins
respectively. UVP can also be used as a disabling input for the entire SMPS, with
ultra-low residual input power consumption. Integrated HV startup, sense FET, error
DS13285 - Rev 2 - June 2020
For further information contact your local STMicroelectronics sales office.
amplifier and oscillator with frequency jitter allow a complete application to be
designed with a minimum component count.
Flyback, buck and buck boost topologies are supported.
www.st.com
1 Pin setting
GND
N.C.
OVP
N. A.
UVP
VCC
N. C.
N. C.
N. C.
N. C.
DRAIN
DRAIN
DRAIN
DRAIN
FB
COMP
VIPER31
Pin setting
Figure 1. Connection diagram
Table 1. Pin description
Pin
number
1 GND
2 N. C. Not connected. When designing the PCB, this pin can be soldered to GND.
3 VCC
4 N.A.
5 UVP
6 OVP
7
Name Function
Ground and MOSFET source. Connection of both the source of the internal MOSFET and the return of
the bias current of the device. All of the groundings of bias components must be tied to a trace going to
this pin and kept separate from the pulsed current return.
Controller Supply. An external storage capacitor has to be connected across this pin and GND. The
pin, internally connected to the high-voltage current source, provides the VCC capacitor charging current
at startup. A small bypass capacitor (0.1 μF typ.) in parallel, placed as close as possible to the IC, is also
recommended, for noise filtering purposes.
Not available for user. This pin is mechanically connected to the controller die pad of the frame. In order
to improve noise immunity, it is highly recommended to connect it to GND.
FB
Undervoltage Protection. If V
t
V
switching. The pin can be used to realize an input undervoltage protection or as a disabling input for the
entire SMPS, with ultra-low residual input power consumption. If the feature is not required, the pin must
be left open, which excludes the function.
Overvoltage protection. If VOVP exceeds the internal threshold V
t
the OVP condition is removed, after that it restarts switching with soft-start phase. OVP pin can be used
to realize an input overvoltage protection (or, in non-isolated topologies, an output overvoltage
protection).
If the feature is not required, the pin must be connected to GND, which excludes the function.
Direct feedback. It is the inverting input of the internal transconductance E/A, internally referenced to
1.2 V with respect to GND. In non-isolated converter, the output voltage information is directly fed into the
pin through a voltage divider. In primary regulation, the FB voltage divider is connected to the VCC. The
E/A is disabled if FB is connected to GND pin.
time (30 ms, typ.), the IC is disabled, and its consumption reduced to ultra-low values. When
UVP_DEB
rises above V
UVP
time (250 μsec, typ.), the PWM is disabled in auto-restart for t
OVP_DEB
UVP_th,
falls below the internal threshold V
UVP
the device waits for a t
UVP_REST
UVP_th
time interval (30 ms, typ.) then resumes
(4 V typ.) for more than
OVP_th
OVP_REST
(0.4 V typ.) for more than
(500 msec, typ.) until
DS13285 - Rev 2
page 2/40
VIPER31
Pin setting
Pin
number
8 COMP
9 to 12 N.C. Not connected. These pins must be left floating in order to get a safe clearance distance.
13 to 16 DRAIN
Name Function
Compensation. This is the output of the internal E/A. A compensation network is placed between this
pin and GND to achieve stability and good dynamic performance of the control loop. In case of
secondary feedback, the internal E/A must be disabled and the COMP directly driven by the optocoupler
to control the DRAIN peak current setpoint.
MOSFET drain. The internal high-voltage current source sources current from these pins to charge the
VCC capacitor at startup. The pins are mechanically connected to the internal metal PAD of the
MOSFET in order to facilitate heat dissipation. On the PCB, some copper areas under these pins
decreases the total junction-to-ambient thermal resistance thus facilitating the power dissipation.
DS13285 - Rev 2
page 3/40
2 Electrical and thermal ratings
Table 2. Absolute maximum ratings
Symbol
V
I
DRAIN
V
V
V
V
V
P
T
T
DS
CC
OVP
UVP
FB
COMP
TOT
J
STG
Drain-to- source (ground) voltage 800 V
Pulsed drain current (pulse-width limited by SOA) 3 A
VCC voltage -0.3 30.5V V
OVP voltage -0.3
UVP voltage -0.3
FB voltage -0.3
COMP voltage -0.3
Power Dissipation @ Tamb < 50°C
Junction Temperature operating range -40 150 °C
Storage Temperature -55 150 °C
1. stresses beyond those listed absolute maximum ratings may cause permanent damage to the device.
2. exposure to absolute-maximum-rated conditions for extended periods may affect the device reliability
3. by internal clamp between 4.75 V and 5.25 V or Vcc + 0.6 V, whichever is lower
4. the AMR value is intended when VCC ≥ 5 V, otherwise the value VCC + 0.3 V has to be considered.
5. when mounted on a standard single side FR4 board with 100 mm² (0.155² inch) of Cu (35 μm thick)
Parameter
(1)(2)
VIPER31
Electrical and thermal ratings
Min. Max. Unit
Internally
limited
Internally
limited
(4)
5
Internally
limited
(5)
1
V
(3)
V
(3)
V
V
(3)
W
Table 3. Thermal data
Parameter
(1)
(1)
(2)
(2)
R
R
R
R
Symbol
TH-JC
TH-JA
TH-JC
TH-JA
Thermal resistance junction to case
(dissipated power = 1W)
Thermal resistance junction to ambient
(dissipated power = 1W)
Thermal resistance junction to case
(dissipated power = 1W)
Thermal resistance junction to ambient
(dissipated power = 1W)
1. when mounted on a standard single side FR4 board with minimum copper area
2. when mounted on a standard single side FR4 board with 100mm² (0.155² inch) of Cu (35 μm thick)
Max. value
SO16N
10 °C/W
120 °C/W
5 °C/W
85 °C/W
Unit
DS13285 - Rev 2
page 4/40
0.750
0.875
1.000
1.125
1.250
1.375
1.500
0 25 50 75 100 125 150 175 200 225
A (mm2)
R
thJA
/(R
thJA
@ A = 100mm2)
VIPER31
Electrical characteristics
Figure 2. R
versus copper area
th_JA
Table 4. Avalanche characteristics
2.1
Symbol
I
AR
EAS
1. Parameter derived by characterization
Avalanche current
Single pulse avalanche energy
Electrical characteristics
Parameter Condition Min. Typ. Max. Unit
Repetitive and non-repetitive.
Pulse-width limited by T
Jmax
1.15 A
IAS = IAR,
(1)
V
DS
= 100 V,
3 mJ
Starting TJ = 25°C
Tj = -40 to 125°C, VCC = 9 V (unless otherwise specified)
Symbol
V
BVDSS
I
DSS
I
OFF
R
DS(on)
Parameter
Breakdown voltage
Drain-source leakage current
OFF state drain current
Static drain-source
ON‑resistance
Table 5. Power section
Test condition Min. Typ. Max. Unit
I
= 1 mA, V
DRAIN
TJ = 25°C
VDS = 400 V, V
TJ = 25°C
V
= max. rating,
DRAIN
V
= V
COMP
I
DRAIN
I
DRAIN
GND
= 400 mA, TJ = 25°C
= 400 mA, TJ = 125°C
= V
COMP
= V
COMP
, TJ = 25°C
GND
GND
,
800 V
,
1 µA
60 µA
3.5 Ω
7 Ω
DS13285 - Rev 2
page 5/40
VIPER31
Electrical characteristics
Table 6. Supply section
Symbol Parameter Test condition Min. Typ. Max. Unit
High-voltage startup current source
V
BVDSS_SU
V
HV_START
R
G
I
CH1
I
CH2
IC supply and consumptions
V
CC
V
Ccon
V
Cson
V
Ccoff
I
q
I
CC
Breakdown voltage of startup
MOSFET
TJ = 25°C
800 V
Drain-source startup voltage 24 V
Startup resistor
V
charging current at startup V
CC
VCC charging current
VFB > V
V
DRAIN
V
DRAIN
DRAIN
VFB > V
1V < VCC <V
,
FB_REF
= 400 V,
= 600 V
= 100V, V
, V
FB_REF
CCon
≤ 1V
CC
DRAIN
36 45 54 MΩ
0.5 1 1.5
= 100V
7.6 8.8 10
Operating voltage range 4.5 30 V
VCC startup threshold 7.5 8 8.5 V
HV current source turn-on
threshold
V
CC
falling
4 4.25 4.5 V
UVLO 3.75 4 4.25 V
Quiescent current
Operating supply current,
switching
Not switching,
VFB > V
FB_REF
VDS = 150 V, V
F
= 30 kHz
OSC
VDS = 150 V, V
F
= 60 kHz
OSC
V
= 150 V, V
DS
F
= 132 kHz
OSC
X, L versions 0.35
H version 0.48
= 1.2 V,
COMP
= 1.2 V,
COMP
= 1.2 V,
COMP
1.25 1.7
1.5 2
2.25 2.8
mA
mA
mA
Note: 1. Current supplied only during the main MOSFET OFF time.
2. Parameter assured by design and characterization.
DS13285 - Rev 2
page 6/40
VIPER31
Electrical characteristics
Table 7. Controller section
Symbol Parameter Test condition Min. Typ. Max. Unit
E/A
V
FB_REF
V
FB_DIS
I
FB_PULL UP
G
M
I
COMP1
Reference voltage 1.175 1.2 1.225 V
E/A disable voltage 150 180 210 mV
Pull-up current 0.9 1 1.1 µA
V
=1.5 V,
Trans conductance
Max. source current
COMP
V
FB >VFBREF
V
=1.5 V,
COMP
VFB =0.5 V
400 550 700 µA/V
75 100 125 µA
I
COMP2
R
COMP(DYN)
V
COMPH
V
COMPL
H
COMP
OLP and timing
I
DLIM
2
I
f
I
Dlim_PFM
t
OVL
t
OVL_max
t
SS
t
ON_MIN
t
RESTART
UVP
V
UVP_th
Max. sink current
Dynamic resistance
V
COMP
V
COMP
V
FB =GND
=1.5 V
=2.7 V,
75 100 125 µA
13 15 17 kΩ
Current limitation threshold 2.75 3.1 3.45 V
PFM threshold 0.6 0.8 1 V
VFB=2 V,
ΔV
/ΔI
COMP
DRAIN
Drain current limitation
Power coefficient
I
DLIM_TYP
2
x F
OSC_TYP
Drain current limitation at light load
VIPER318* 3.2 3.5 3.8
VIPER319* 2.9 3.2 3.5
TJ= 25°C , VIPER318*
TJ= 25°C , VIPER319*
VIPER318*
VIPER319*
(1)
(1)
VIPER318L
VIPER318H 95.4
810 850 890
940 990 1040
765 850 935
891 990 1089
43.4
-10%
+10%
VIPER319X 29.4
TJ=25°C, V
VIPER318*
TJ=25°C, V
VIPER319*
COMP=VCOMPL
(1)
COMP=VCOMPL
(1)
(2)
100 130 160
(2)
120 150 180
V/A
mA
A2·kHz
mA
Overload delay time 45 50 55 ms
Max. overload delay time When in pulse skipping 100 ms
Soft-start time 6 8 10 ms
VCC=9 V,
V
Minimum turn-on time
COMP
VFB=V
=1 V,
FB_REF
250 300 350 ns
Restart time after fault 0.75 1 1.25 s
VCC =9 V,
UVP threshold
V
COMP
=1 V,
0.38 0.4 0.42 V
DS13285 - Rev 2
page 7/40
VIPER31
Electrical characteristics
Symbol Parameter Test condition Min. Typ. Max. Unit
V
FB=VFB_REF
I
UVP_pull- up
t
UVP_DEB
t
UVP_REST
I
q_DIS
OVP
V
OVP_th
t
OVP_DEB
t
OVP_REST
Oscillator
F
OSC
F
OSC MIN
F
D
F
M
D
MAX
T
SD
1. Measured at Vin = 100 Vdc in Flyback topology, with 1.5 mH transformer primary inductance
2. See Section 4.10 Pulse frequency modulation
3. See Section 4.7 Pulse skipping
4. Parameter assured by design and characterization.
UVP pull-up current -1 µA
Debounce time before UVP tripping 22.5 30 37.5 ms
Debounce time for restoring normal
operation from UVP
Quiescient current during UVP
Not switching, VFB>V
FB_REF
22.5 30 37.5 ms
0.25 0.35 mA
VCC=9 V,
V
Overvoltage protection threshold
COMP
VFB=V
=1 V,
FB_REF
3.85 4 4.15 V
Debounce time before OVP tripping 188 250 312 µs
Restart time after overvoltage
protection tripping
Switching frequency
Min. switching frequency
Modulation depth
Modulation frequency
Max. duty cycle
TJ =25ºC VIPER31*X
TJ = 25ºC, VIPER31*L
TJ = 25ºC, VIPER31*H
TJ= 25ºC
(4)
(4)
(4)
(3)
375 500 625 ms
27 30 33
54 60 66
119 132 145
13.5 15 16.5 kHz
±7·F
OSC
200 Hz
70 80 %
Thermal shutdown protection
Thermal shutdown temperature
threshold
(4)
150 160 °C
kHz
%
DS13285 - Rev 2
page 8/40
3 Typical electrical characteristics
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
I
DLIM
/(I
DLIM
@25°C)
Tj[°C]
0.9
0.95
1
1.05
1.1
-50 -25 0 25 50 75 100 125 150
F
OSC
/(F
OSC
@25°C)
Tj[°C]
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
V
HV_START
/(V
HV_START
@25°C)
Tj[°C]
0.95
0.975
1
1.025
1.05
-50 -25 0 25 50 75 100 125 150
V
FB_REF
/(V
FB_REF
@25°C)
Tj[°C]
0.9
0.95
1
1.05
1.1
-50 -25 0 25 50 75 100 125 150
Iq/(Iq@25°C)
Tj[°C]
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
ICC/(ICC@25°C)
Tj[°C]
VIPER31
Typical electrical characteristics
Figure 3. I
Figure 5. V
vs. T
DLIM
HV_START
J
vs. T
Figure 4. F
J
Figure 6. VF
OSC
B_REF
vs. T
vs. T
J
J
Figure 7. Quiescent Current Iq vs. T
DS13285 - Rev 2
J
Figure 8. Operating current ICC vs. T
J
page 9/40
0.5
0.7
0.9
1.1
1.3
1.5
-50 -25 0 25 50 75 100 125 150
I
CH1
/(I
CH1
@25°C)
Tj[°C]
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
I
CH2
/(I
CH2
@25°C)
Tj[°C]
0.9
0.95
1
1.05
1.1
0 100 200 300 400 500 600 700 800
I
CH1
/(I
CH1@VDRAIN
= 100V)
V
DRAIN
[V]
0.9
0.95
1
1.05
1.1
0 100 200 300 400 500 600 700 800
I
CH2
/(I
CH2@VDRAIN
=100V)
V
DRAIN
[V]
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
GM/(GM@25°C)
Tj[°C]
0.9
0.95
1
1.05
1.1
-50 -25 0 25 50 75 100 125 150
I
COMP
/(I
COMP
@25°C)
Tj[°C]
VIPER31
Typical electrical characteristics
Figure 9. I
Figure 11. I
CH1
CH1
vs. V
vs. T
J
DRAIN
Figure 10. I
Figure 12. I
CH2
CH2
vs. T
vs. V
J
DRAIN
Figure 13. GM vs. T
DS13285 - Rev 2
J
Figure 14. I
COMP
vs. T
J
page 10/40
0.00
0.50
1.00
1.50
2.00
2.50
-50 -25 0 25 50 75 100 125 150
Tj[°C]
R
DS(on)
/(R
DS(on)
@25°C)
0
0.5
1
1.5
0 50 100 150 200 250 300 350 400
I
[mA]
R
DS(on)
/(R
DS(on)@IDRAIN
= 360mA)
T = 25°C
1
10
100
1000
10000
0 1 10 100 1000
VDS[V]
C
OSS
[pF]
0.88
0.92
0.96
1
1.04
1.08
1.12
-50 0 50 100 150
TJ[°C]
V
(BR)DSS
/ (V
(BR)DSS
@ 250C)
ID= 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
4.8
0.0 4.0 8.0 12.0 16.0 20.0
VDS[V]
I
DRAIN
[A]
-40°C
25°C
125°C
VIPER31
Typical electrical characteristics
Figure 15. R
DSON
vs. T
J
Figure 17. Static drain-source on resistance
Figure 16. R
Figure 18. Power MOSFET C
vs. I
DSON
OSS
DRAIN
vs. VDS @ VGS=0, f=1MHz
Figure 19. V
DS13285 - Rev 2
BVDSS
vs. T
J
Figure 20. Output characteristic
page 11/40
0.01
0.1
1
10
0.1 1 10 100 1000 10000
VDS[V]
ID[A]
tp= 1 ms
tp= 10 ms
tp= 1 ms
R
DS(on)
limit
tp= 100 ms
0
1
2
3
4
-50 0 50 100 150
Tj[°C]
EAS[mJ]
Single pulse,
ID= 1A, VDD= 50 V
VIPER31
Typical electrical characteristics
Figure 21. SOA SO16N package
Figure 22. Maximum avalanche energy vs. Tj
DS13285 - Rev 2
page 12/40