STMicroelectronics ULN2001A, ULN2002A Technical data

!

ULN2001A-ULN2002A

ULN2003A-ULN2004A

.SEVEN DARLINGTONS PER PACKAGE

.

OUTPUT CURRENT 500mA PER DRIVER

.(600mA PEAK)

.OUTPUT VOLTAGE 50V

INTEGRAL SUPPRESSION DIODES FOR IN-

.DUCTIVE LOADS

OUTPUTS CAN BE PARALLELED FOR

.HIGHER CURRENT

.TTL/CMOS/PMOS/DTL COMPATIBLE INPUTS INPUTS PINNED OPPOSITE OUTPUTS TO SIMPLIFY LAYOUT

DESCRIPTION

The ULN2001A, ULN2002A, ULN2003 and ULN2004Aare high voltage, high current darlington arrays each containing seven open collector darlingtonpairs with common emitters. Each channelis rated at 500mA and can withstand peak currents of 600mA. Suppression diodesare included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout.

The four versionsinterfaceto all common logic families :

ULN2001A

General Purpose, DTL, TTL, PMOS,

 

CMOS

ULN2002A

14-25V PMOS

ULN2003A

5V TTL, CMOS

ULN2004A

6±15V CMOS, PMOS

Theseversatile devices are usefulfor driving a wide range of loads including solenoids, relays DC motors, LED displays filament lamps, thermal printheads and high power buffers.

The ULN2001A/2002A/2003Aand 2004A are supplied in 16 pin plastic DIP packages with a copper leadframe to reduce thermal resistance. They are available also in small outline package (SO-16) as ULN2001D/2002D/2003D/2004D.

SEVEN DARLINGTON ARRAYS

DIP16

ORDERING NUMBERS: ULN2001A/2A/3A/4A

SO16

ORDERING NUMBERS: ULN2001D/2D/3D/4D

PIN CONNECTION

December 1997

1/8

 

STMicroelectronics ULN2001A, ULN2002A Technical data

ULN2001A - ULN2002A - ULN2003A - ULN2004A

SCHEMATIC DIAGRAM

Series ULN-2001A

Series ULN-2002A

(each driver)

(each driver)

Series ULN-2003A

Series ULN-2004A

(each driver)

(each driver)

ABSOLUTE MAXIMUM RATINGS

Symbol

arameter

Value

Unit

Vo

Output Voltage

50

V

Vin

Input Voltage (for ULN2002A/D - 2003A/D - 2004A/D)

30

V

Ic

Continuous Collector Current

500

mA

Ib

Continuous Base Current

25

mA

Tamb

Operating Ambient Temperature Range

± 20 to 85

°C

Tstg

Storage Temperature Range

± 55 to 150

°C

Tj

Junction Temperature

150

°C

THERMAL DATA

Symbol

Parameter

 

DIP16

SO16

Unit

Rth j-amb

Thermal Resistance Junction-ambient

Max.

70

100

°C/W

2/8

ULN2001A - ULN2002A - ULN2003A - ULN2004A

ELECTRICAL CHARACTERISTICS (Tamb = 25oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Fig.

ICEX

Output Leakage Current

VCE = 50V

 

 

50

μA

1a

 

 

Tamb = 70°C, VCE = 50V

 

 

100

μA

1a

 

 

Tamb = 70°C

 

 

 

 

 

 

 

for ULN2002A

 

 

 

μA

 

 

 

VCE = 50V, Vi = 6V

 

 

500

1b

 

 

for ULN2004A

 

 

 

μA

 

 

 

VCE = 50V, Vi = 1V

 

 

500

1b

VCE(sat)

Collector-emitter Saturation

IC = 100mA, IB = 250μA

 

0.9

1.1

V

2

 

Voltage

IC = 200 mA, IB = 350μA

 

1.1

1.3

V

2

 

 

IC = 350mA, IB = 500μA

 

1.3

1.6

V

2

Ii(on)

Input Current

for ULN2002A, Vi = 17V

 

0.82

1.25

mA

3

 

 

for ULN2003A, Vi = 3.85V

 

0.93

1.35

mA

3

 

 

for ULN2004A, Vi = 5V

 

0.35

0.5

mA

3

 

 

Vi = 12V

 

1

1.45

mA

3

Ii(off)

Input Current

Tamb = 70°C, IC = 500μA

50

65

 

μA

4

Vi(on)

Input Voltage

VCE = 2V

 

 

 

V

5

 

 

for ULN2002A

 

 

13

 

 

 

 

IC = 300mA

 

 

 

 

 

 

for ULN2003A

 

 

2.4

 

 

 

 

IC = 200mA

 

 

 

 

 

 

IC = 250mA

 

 

2.7

 

 

 

 

IC = 300mA

 

 

3

 

 

 

 

for ULN2004A

 

 

5

 

 

 

 

IC = 125mA

 

 

 

 

 

 

IC = 200mA

 

 

6

 

 

 

 

IC = 275mA

 

 

7

 

 

 

 

IC = 350mA

 

 

8

 

 

hFE

DC Forward Current Gain

for ULN2001A

 

 

 

 

 

 

 

VCE = 2V, IC = 350mA

1000

 

 

 

2

Ci

Input Capacitance

 

 

15

25

pF

 

tPLH

Turn-on Delay Time

0.5 Vi to 0.5 Vo

 

0.25

1

μs

 

tPHL

Turn-off Delay Time

0.5 Vi to 0.5 Vo

 

0.25

1

μs

 

IR

Clamp Diode Leakage Current

VR = 50V

 

 

50

μA

6

 

 

Tamb = 70°C, VR = 50V

 

 

100

μA

6

VF

Clamp Diode Forward Voltage

IF = 350mA

 

1.7

2

V

7

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