Page 1
FEATURES
.HIGHSURGECAPABILITY
.HIGHON-STATE CURRENT
.HIGHSTABILITYAND RELIABILITY
.TXNSerie:
INSULATEDVOLTAGE=2500V
(ULRECOGNIZED : E81734)
DESCRIPTION
(RMS)
TXN/TYN 0512 --->
TXN/T YN 101 2
SCR
The TYN/TXN 0512 ---> TYN/TXN 1012 Family
of Silicon Controlled Rectifiers uses a high performance glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C)
2
t value tp=10 ms 72 A2s
Gate supply : IG= 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range - 40 to + 150
TXN
TYN
TXN
TYN
Tc=80°C
Tc=90°C
Tc=80°C
Tc=90°C
tp=8.3 ms 125 A
tp=10 ms 120
TO220AB
(Plastic)
- 40 to + 125
G
A
K
12 A
8A
100 A/µs
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Symbol Parameter TYN/TXN Unit
0512 112 212 412 612 812 1012
V
DRM
V
RRM
April 1995
Repetitive peak off-state voltage
Tj = 125 °C
50 100 200 400 600 800 1000 V
260 °C
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Page 2
TXN/T Y N 0512 ---> TXN/ TYN 1 012
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case forDC TXN 3.5 °C/W
TYN 2.5
GATECHARACTERISTICS (maximumvalues)
P
ELECTRICAL CHARACTERISTICS
=1W PGM= 10W (tp = 20 µs) I
G (AV)
Symbol Test Conditions Value Unit
= 4A (tp = 20 µs) V
FGM
RGM
=5V.
I
GT
V
GT
V
GD
tgt VD=V
I
L
I
H
V
TM
I
DRM
I
RRM
dV/dt Linear slope up to VD=67%V
tq VD=67%V
VD=12V (DC) RL=33Ω Tj=25°C MAX 15 mA
VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
VD=V
DRMRL
DRMIG
dIG/dt = 0.5A/µs
IG= 1.2 I
IT= 100mA gate open Tj=25°C MAX 30 mA
ITM= 24A tp= 380µs Tj=25°C MAX 1.6 V
V
DRM
V
RRM
gate open
dITM/dt=30 A/µsdV
=3.3kΩ Tj= 125°C MIN 0.2 V
= 40mA
GT
Rated
Rated
DRMITM
= 24A VR= 25V
/dt= 50V/µs
D
DRM
Tj=25°C TYP 2 µs
Tj=25°C TYP 50 mA
Tj=25°C MAX 0.01 mA
Tj= 125°C3
Tj= 125°C MIN 200 V/µs
Tj= 125°C TYP 70 µs
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Page 3
Fig.1 : Maximum average power dissipation versus
average on-state current (TXN).
TXN/T Y N 0512 ---> T XN / TYN 1012
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
and T
contact (TXN).
) for different thermal resistances heatsink +
case
amb
Fig.3 : Maximum average power dissipation versus
average on-state current (TYN).
Fig.5 : Average on-state current versus case
temperature (TXN).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
and T
contact (TYN).
Fig.6 : Average on-state current versus case
temperature (TYN).
) for different thermal resistances heatsink +
case
amb
3/5
Page 4
TXN/T Y N 0512 ---> TXN/ TYN 1 012
Fig.7 : Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
Zth( j-c)
0.1
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth(j-a)
tp(s)
Fig.9 : Non repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
Fig.10 : Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t ≤ 10 ms, and
corresponding value of I2t.
Fig.11 : On-state characteristics (maximum values).
4/5
Page 5
PACKAGE MECHANICAL DATA
TO220AB Plastic
A
G
I
P
=N=
Cooling method : by conduction (method C)
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
D
F
O
TXN/T Y N 0512 ---> T XN / TYN 1012
REF. DIMENSIONS
Millimeters Inches
H
J
A 10.00 10.40 0.393 0.409
B 15.20 15.90 0.598 0.625
C 13.00 14.00 0.511 0.551
B
D 6.20 6.60 0.244 0.259
F 3.50 4.20 0.137 0.165
G 2.65 2.95 0.104 0.116
C
L
M
H 4.40 4.60 0.173 0.181
L 0.49 0.70 0.019 0.027
M 2.40 2.72 0.094 0.107
N 4.80 5.40 0.188 0.212
O 1.14 1.70 0.044 0.066
P 0.61 0.88 0.024 0.034
Min. Max. Min. Max.
I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. Nolicense is granted by implication or otherwise under any patent or patent rights ofSGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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