Rail-to-rail high output current dual operational amplifier
Features
■ Rail-to-rail input and output
■ Low noise: 9nV/√Hz
■ Low distortion
■ High output current: 80mA
(able to drive 32Ω loads)
■ High-speed: 4MHz, 1V/μs
■ Operating from 2.7V to 12V
■ Low input offset voltage: 900μV max (TS922A)
■ ESD internal protection: 2kV
■ Latch-up immunity
■ Macromodel included in this specification
■ Dual version available in flip-chip package
Applications
■ Headphone amplifier
■ Sound cards, multimedia systems
■ Line driver, actuator driver
■ Servo amplifier
■ Mobile phone and portable equipment
■ Instrumentation with low noise as key factor
■ Piezoelectric speaker driver
TS922
J
(Flip-chip)
N
DIP8
(Plastic package)
D
SO-8
(Plastic micropackage)
P
TSSOP8
(Thin shrink small outline package)
Description
The TS922 is a rail-to-rail dual BiCMOS
The device is stable for capacitive loads up to
500pF.
operational amplifier optimiz ed and f u lly sp ecif ied
for 3V and 5V operation.
The device’s high output current allows low-load
impedances to be driven.
Very low noise, low distortion, low offset and a
high output current capability make this device an
excellent choice for high quality, low voltage or
battery operated audio systems.
November 2007 Rev 71/22
www.st.com
22
TS922Pin diagrams
1 Pin diagrams
Figure 1.Pin connections (top view)
Output 1
Inverting Input 1
Non-inverting Input 1
V
1
2
-
+
3
45
CC
Figure 2.Pinout for flip-chip package (top view)
OUT2-IN2+IN2
OUT2-IN2+IN2
-
-
+
+
VCC+
VCC+
+
+
-
-
+
V
8
CC
Output 2
7
-
+
Inverting Input 2
6
Non-inverting Input 2
GND
GND
+IN1-IN1OUT1
+IN1-IN1OUT1
3/22
Absolute maximum ratings and operating conditionsTS922
2 Absolute maximum ratings and operating conditions
Table 1.Absolute maximum ratings (AMR)
SymbolParameterValueUnit
(3)
(1)
(6)
(2)
(5)
(7)
(4)
(4)
14V
±1V
VDD-0.3 to VCC+0.3V
125
120
°C/W
85
90
40
37
°C/W
41
2000
100
1500
(8)
V
V
CC
V
id
V
in
T
stg
R
thja
R
thjc
T
ESD
Supply voltage
Differential input voltage
Input voltage
Storage temperature-65 to +150°C
Thermal resistance junction to ambient
SO-8
TSSOP8
DIP8
Flip-chip
Thermal resistance junction to case
SO-8
TSSOP8
DIP8
Maximum junction temperature150°C
j
HBM: human body model
MM: machine model
CDM: charged device model
Output short circuit durationsee note
Latch-up immunity200mA
Soldering temperature (10sec), leaded version
Soldering temperature (10sec), unleaded version
1. All voltage values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If
V
> ±1V, the maximum input current must not exceed ±1mA. In this case (Vid > ±1V), an input series
id
resistor must be added to limit input current.
3. Do not exceed 14V.
4. Short-circuits can cause excessive heating. Destructive dissipation can result from simultaneous shortcircuits on all amplifiers. These values are typical.
5. Human body model: A 100pF capacitor is charged to the specified voltage, then discharged through a
1.5kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
6. Machine model: A 200pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5Ω). This is done for all couples of
connected pin combinations while the other pins are floating.
7. Charged device model: all pins and the package are charged together to the specified voltage and then
discharged directly to the ground through only one pin. This is done for all pins.
8. There is no short-circuit protection inside the device: short-circuits from the output to V
excessive heating. The maximum output current is approximately 80mA, independent of the magnitude of
V
. Destructive dissipation can result from simultaneous short-circuits on all amplifiers.
CC
250
260
can cause
CC
°C
4/22
TS922Absolute maximum ratings and operating conditions
Table 2.Operating conditions
SymbolParameterValueUnit
T
V
V
Supply voltage2.7 to 12V
CC
Common mode input voltage rangeVDD -0.2 to VCC +0.2V
icm
Operating free air temperature range-40 to +125°C
oper
5/22
Electrical characteristicsTS922
3 Electrical characteristics
Table 3.Electrical characteristics measured at VCC = +3V, VDD = 0V, V
T
= 25°C, and RL connected to VCC/2 (unless otherwise specified)
amb
= VCC/2,
icm
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
Input offset voltage
io
DV
V
V
Input offset voltage drift2μV/°C
io
I
Input offset current
io
Input bias current
I
ib
High level output voltage
OH
Low level output voltage
OL
A
Large signal voltage gain
vd
I
Total supply current
CC
GBPGain bandwidth productR
CMRCommon mode rejection ratio
SVRSupply voltage rejection ratio
Output short circuit current5080mA
I
o
TS922
TS922A
TS922IJ (flip-chip)
T
min
≤ T
amb
≤ T
max
TS922
TS922A
TS922IJ (flip-chip)
= VCC/2
V
out
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
amb
amb
amb
amb
amb
amb
amb
amb
amb
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
out
≤ T
out
≤ T
out
= VCC/2
out
≤ T
max
max
max
max
max
max
= 2V
max
= 2V
max
= 2V
max
2.90
2.90
2.87
2.87
p-p
70
p-p
15
p-p
T
min
= VCC/2
V
out
T
min
= 10kΩ
R
L
T
min
R
= 600Ω
L
T
min
= 32Ω2.63V
R
L
R
= 10kΩ
L
T
min
= 600Ω
R
L
T
min
= 32Ω180mV
R
L
= 10kΩ, V
R
L
T
min
= 600Ω, V
L
T
min
R
= 32Ω, V
L
No load, V
T
min
= 600Ω4MHz
L
60
≤ T
T
min
V
= 2.7 to 3.3V
CC
T
≤ T
min
amb
amb
≤ T
≤ T
max
max
56
60
60
130
15100
200
35
16
23
80
85
3
0.9
1.5
5
1.8
2.5
30
100
50
50
100
100
3.2
mV
mV
mV
V/mVR
mA
SRSlew rate0.71.3V/μs
nA
nA
V
V
dB
dB
6/22
TS922Electrical characteristics
φmPhase margin at unit gainR
G
Gain marginRL = 600Ω, CL =100pF12dB
m
Equivalent input noise voltage f = 1kHz9
e
n
= 600Ω, CL =100pF68Degrees
L
7/22
Electrical characteristicsTS922
Table 4.Electrical characteristics measured at VCC = 5V, VDD = 0V, V
T
= 25°C, and RL connected to VCC/2 (unless otherwise specified)
amb
= VCC/2,
icm
SymbolParameterConditionsMin.Typ.Max.Unit
V
Input offset voltage
io
DV
V
V
Input offset voltage drift2μV/°C
io
I
Input offset current
io
Input bias current
I
ib
High level output voltage
OH
Low level output voltage
OL
A
Large signal voltage gain
vd
I
Total supply current
cc
GBPGain bandwidth productR
CMR
Common mode rejection
ratioT
SVRSupply voltage rejection ratio
Output short circuit current5080mA
I
o
TS922
TS922A
TS922IJ (flip-chip)
T
min
≤ T
amb
≤ T
max
TS922
TS922A
TS922IJ (flip-chip)
= VCC/2
V
out
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
amb
amb
amb
amb
amb
amb
amb
amb
amb
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
out
≤ T
out
≤ T
out
= VCC/2
out
≤ T
max
max
max
max
max
max
= 2V
max
= 2V
max
= 2V
max
4.9
4.9
4.85
4.85
p-p
70
p-p
20
p-p
T
min
= VCC/2
V
out
T
min
= 10kΩ
R
L
T
min
= 600Ω
L
T
min
= 32Ω4.4
R
L
R
= 10kΩ
L
T
min
= 600Ω
L
T
min
= 32Ω300
R
L
= 10kΩ, V
R
L
T
min
R
= 600Ω, V
L
T
min
R
= 32Ω, V
L
No load, V
T
min
= 600Ω4MHz
L
60
≤ T
min
V
= 4.5 to 5.5V
CC
T
≤ T
min
amb
amb
≤ T
≤ T
max
max
56
60
60
130
15100
200
35
16
23
80
85
3
0.9
1.5
5
1.8
2.5
30
100
50
50
120
120
3.2
mV
nA
nA
mVR
V/mV
mA
dB
dB
SRSlew rate0.71.3V/μs
VR
8/22
TS922Electrical characteristics
Table 4.Electrical characteristics measured at V
φmPhase margin at unit gainR
G
Gain margin RL = 600Ω, CL =100pF12dB
m
Equivalent input noise
e
n
voltage
THDTotal harmonic distortionV
Channel separation 120dB
C
s
= 600Ω, CL =100pF68Degrees
L
f = 1kHz9
= 2V
out
, f= 1kHz, Av= 1, RL=600Ω0.005%
p-p
9/22
Electrical characteristicsTS922
100
O
S
C
C
(
)
Figure 3.Output short circuit current vs.
output voltage
80
60
mA
40
urrent
20
0
ircu it
-20
hort-
-40
utput
-60
-80
-100
00,511,522,53
Sink
Vcc=0/3V
Source
Output V ol t age (V)
Figure 4.Total supply current vs. supply
voltage
10/22
TS922Electrical characteristics
)
(
)
Figure 9.THD + noise vs. frequencyFigure 10. THD + noise vs. output voltage
0.7
0.6
0.5
0.4
0.3
THD+Noise (%)
0.2
0.1
0
0.010.1110100
RL=32Ω Vo=2Vpp
V
CC
=±1.5V Av= 10
Frequency (kHz)
10,000
1,000
%
0,100
THD+Noise
0,010
0,001
00,20,40,60,811,2
RL=600Ω f=1kHz
V
=0/3V Av= -1
CC
Vout (Vrms
Figure 11. THD + noise vs. output voltageFigure 12. THD + noise vs. output voltage
10
10
1
1
THD+Noise (%)
0.1
RL=32Ω f=1kHz
V
=±1.5V Av= -1
CC
0.1
THD+Nois e (%)
0.01
RL=2kΩ f=1kHz
V
=±1.5V Av= -1
CC
0.01
00.20.40.60.81
Vout (Vrms)
Figure 13. Open loop gain and phase vs.
frequency
50
40
30
Gain (dB)
20
10
0
1E+21E+31E+41E+51E+61E+71E+8
CL=500pF
Frequency (Hz)
0.001
00.20.40.60.811.2
180
120
Phase (Deg)
60
0
Vout (Vrms)
11/22
MacromodelTS922
4 Macromodel
4.1 Important note concerning this macromodel
Please consider the following remarks before using this macromodel.
●All models are a trade-off between accuracy and complexity (i.e. simulation time).
●Macromodels are not a substitute to breadboarding; rather, they confirm the valid ity of
a design approach and help to select surrounding component values.
●A macromodel emulates the nominal p erf ormance of a typical de vice within specified
operating conditions (temperature, supply voltage, for e xample). Thus the
macromodel is often not as exhaustive as the datasheet, its purpose is to illustrate the
main parameters of the product.
Data derived from macromodels used outside of the specified conditions (V
for example) or even worse, outside of the device operating conditions (V
CC
example), is not reliable in any way.
Section 4.2 provides the electrical characteristics resulting from th e u se of t his macro model.
4.2 Electrical characteristics from macromodelization
Table 5.Electrical characteristics resulting from macromodel simulation at
V
=3V, VDD = 0V, RL, CL connected to VCC/2, T
CC
otherwise specified)
SymbolConditionsValueUnit
V
io
A
vd
I
CC
V
icm
V
OH
V
OL
I
sink
I
source
GBPR
SRR
φmR
RL = 10kΩ200V/mV
No load, per operator1.2mA
RL = 10kΩ2.95V
RL = 10kΩ25mV
VO = 3V80mA
VO = 0V80mA
1. Qualified and characterized according to AEC Q100 and Q003 or equivalent, advanced screening
according to AEC Q001 & Q 002 or equivalent.
2. Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening
according to AEC Q001 & Q 002 or equivalent are on-going.
20/22
TS922Revision history
7 Revision history
Table 10.Document revision history
DateRevisionChanges
1-Feb-20011First release.
1-Jul-20042Flip-chip package inserted in the document.
2-May-20053
Modifications in AMR Table 1 on page 4 (explanation of V
limits, ESD MM and CDM values added, R
added).
thja
1-Aug-20054PPAP references inserted in the datasheet, see Table 6 on page 20.
1-Mar-20065
TS922EIJT part number inserted in the datasheet, see
Table 6 on page 20.
and Vi
id
26-Jan-20076
12-Nov-20077
Modifications in AMR Table 1 on page 4 (R
added), parameter
thjc
limits on full temperature range added in Table 3 on page 6 and
Table 4 on page 8.
Added notes on ESD in AMR table.
Re-formatted package information.
Added notes for automotive grade in order codes table.
21/22
TS922
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