STMicroelectronics TS921 Technical data
TS921
Rail-to-Rail High Output Current Single Operational Amplifier
n
Rail-to -ra i l input and output
n
Low noise: 9nV/√(Hz)
n
Low distortion
n
High output current: 80mA
(able to drive 32Ω loads)
n
High-speed: 4mHz, 1V/µs
n
Operating from 2.7V to 12V
n
ESD internal protect ion: 1.5kV
n
Latch-up immunity
n
Macromodel included in this specification
Description
The TS921 is a rail-to-rail single BiCMOS
operational amplifier optimized and fully spe cified
for 3V and 5V operation.
Its high output current allows low-load
impedances to be driven.
The TS921 exhibits very low noise, low distortion
and low offset. It has a high output current
capability which makes this device an excellent
choice for high quality, low voltage or batteryoperated audio systems.
N
DIP-8
(Plastic Package)
D
SO-8
(Plastic Micropackage)
P
TSSOP8
(Thin Shrink Small Outline Package)
The device is stable for capacitive loads up to
500pF.
Applications
n
Headph on e am pl ifier
n
Piezoelectric speaker driver
n
Sound cards, multimed ia sys tem s
n
Line driver, actuator driver
n
Servo am pl ifi er
n
Mobile phone a nd po rtabl e commu nicati on
sets
n
Instrumentation with low noise as key
factor
Order Codes
Part Number Temperature Range Package Packaging
TS921IN
TS921ID/IDT SO Tube or Tape & Reel
TS921IPT
December 2004 Revision 2 1/13
-40°C, +125°C
(Thin Shrink Outline Package)
DIP Tube
TSSOP
Tape & Reel
TS921 Pin Diagram
1 Pin Diagram
Figure 1 : Pin co nn e ct io ns (top view)
N.C.
Inverting Input
Non-inverting Input
V
1
2
-
+
3
45
CC
8
7
6
N.C.
V
CC
Output
N.C.
+
2 Absolute Maximum Ratings
Table 1: Key parameters and their absolute maximum rating s
Symbol Parameter Value Unit
VCC
T
Supply voltage
Vid
Differential Input Voltage
V
Input Voltage VDD-0.3 to VCC+0.3
i
Storage Temperature
stg
Maximum Junction Temperature
T
j
Thermal Resistance Junction to Ambient
R
SO8
thja
TSSOP8 120
DIP8 85
HBM: Human Body Model
ESD
MM: Machine Model
CDM: Charged Device Model 1.5 kV
Output Short Circuit Duration
Latch-up Immunity 200 mA
Soldering Temperature (10sec), leaded version 250 °C
Soldering Temperature (10sec), unleaded version 260 °C
1) All voltages values, except differential voltage are with respect to network ground terminal.
2) Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If Vid > ±1V, the maximu m in pu t cu r -
rent must not exceed ±1m A . In this case (Vid > ±1V) an input serie resist or must be added to limit input current.
3) Human body model, 100pF discharged throu gh a 1.5kΩ resistor into pin of device.
4) Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with no external series resistor
(inter nal resistor < 5
5) There is no short-circui t protec tion inside the device: sh ort-circuits from the output to V
output c urrent is approximately 80mA, independent of the m agnitude of V
circuits on all amplifiers.
1
2
3
4
Ω), into pin to pin of device.
14 V
±1 V
-65 to +150 °C
150 °C
125
1.5 kV
100 V
see note
can cause excessive heating. The maximum
. Destructive dissip at i on can result f rom simultaneous shor t-
cc
cc
5
V
°C/W
Table 2: OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
2/13
Supply voltage
CC
Common Mode Input Voltage Range
icm
Operating Free Air Temperature Range
oper
2.7 to 12 V
-0.2 to VCC +0.2
V
DD
-40 to +125 °C
V
Electrical Characteristics TS921
3 Electrical Characteristics
Table 3: V
= 3V, V
CC
= 0V, V
DD
= VCC/2, RL connected to Vcc/2, T
icm
= 25°C (unless
amb
otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
Input Offset Voltage
V
io
Tmin.
≤ Tamb ≤ Tmax.
DV
V
V
A
GBP
Input Offset Voltage Drift
io
Input Offset Current
I
io
V
= 1.5V
out
Input Bias Current
I
I
ib
OH
OL
vd
CC
= 1.5V
V
out
High Level Output Voltage RL = 600Ω
RL = 32Ω
Low Level Output Voltage RL = 600Ω
RL = 32Ω 180
Large Signal Voltage Gain (V
= 2Vpk-pk)RL = 600Ω
out
RL = 32Ω
Supply Current
no load, V
= Vcc/2
out
Gain Bandwidth Product
RL = 600
Ω 4
2
15 100
2.87
2.63
35
16
11.5
CMR Common Mode Rejection Ratio 60 80 dB
SVR
Supply Voltage Rejection Ratio
Vcc = 2.7 to 3.3 V 60 80
I
Output Short Circuit Current
o
50 80 mA
SR Slew Rate 0.7 1.3 V/
Phase Margin at Unit Gain
φm
G
m
e
n
THD
RL = 600
Gain Margin
RL = 600
Equivalent Input Noise Voltage
f = 1kHz
Total Harmonic Distortion
V
Ω, C
=100pF
L
Ω, C
=100pF
L
= 2Vpk-pk, F = 1kHz, Av = 1, RL =600Ω
out
68
12
9
0.005
3
5
µV/°C
30
100
Degrees
mV
nA
nA
V
mV
V/mV
mA
MHz
dB
µs
dB
nV
----------- Hz
%
Table 4: VCC = 5V, V
= 0V, V
DD
= VCC/2, RL connected to Vcc/2, T
icm
= 25°C (unless
amb
otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
DV
Input Offset Voltage
io
T
≤ T
min.
Input Offset Voltage Drift
io
Input Offset Current
I
io
V
= 1.5V
out
amb
≤ T
max.
2
3
5
µV/°C
30
mV
nA
3/13
TS921 Electrical Characteristics
Table 4: VCC = 5V, V
= 0V, V
DD
= VCC/2, RL connected to Vcc/2, T
icm
= 25°C (unless
amb
otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
Input Bias Current
I
ib
V
= 1.5V
out
V
OH
V
OL
A
vd
I
cc
GBP
High Level Output Voltage RL = 600Ω
RL = 32Ω
Low Level Output VoltageRL = 600Ω
RL = 32Ω 300
Large Signal Voltage Gain (V
= 2Vpk-V
out
pk) RL
= 600Ω
RL = 32Ω
Supply Current
no load, V
Gain Bandwidth Product R
out
= V
cc/2
= 600Ω
L
4.85
CMR Common Mode Rejection Ratio 60 80 dB
SVR
Supply Voltage Rejection Ratio
V
= 4.5 to 5.5V
cc
I
Output Short Circuit Current
o
60 80
50 80 mA
SR Slew Rate 0.7 1.3 V/
Phase Margin at Unit Gain
φm
G
m
e
n
THD
= 600Ω, CL =100pF
R
L
Gain Margin
R
= 600Ω, CL =100pF
L
Equivalent Input Noise Voltage
f = 1kHz
Total Harmonic Distortion
V
= 2Vpk-pk, F = 1kHz, Av = 1, RL =600Ω
out
15 100
4.4
120
35
16
11.5
4
Degrees
68
12
9
0.005
nA
V
mV
V/mV
mA
MHz
dB
µs
dB
nV
----------- Hz
%
4/13
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