STMicroelectronics TS921 Technical data

TS921

Rail-to-Rail High Output Current Single Operational Amplifier

n

Rail-to -ra i l input and output

n

Low noise: 9nV/√(Hz)

n

Low distortion

n

High output current: 80mA

(able to drive 32Ω loads)

n

High-speed: 4mHz, 1V/µs

n

Operating from 2.7V to 12V

n

ESD internal protect ion: 1.5kV

n

Latch-up immunity

n

Macromodel included in this specification

Description

The TS921 is a rail-to-rail single BiCMOS
operational amplifier optimized and fully spe cified
for 3V and 5V operation.

Its high output current allows low-load
impedances to be driven.

The TS921 exhibits very low noise, low distortion
and low offset. It has a high output current
capability which makes this device an excellent
choice for high quality, low voltage or battery­operated audio systems.

N

DIP-8

(Plastic Package)

D

SO-8

(Plastic Micropackage)

P

TSSOP8

(Thin Shrink Small Outline Package)

The device is stable for capacitive loads up to
500pF.

Applications

n

Headph on e am pl ifier

n

Piezoelectric speaker driver

n

Sound cards, multimed ia sys tem s

n

Line driver, actuator driver

n

Servo am pl ifi er

n

Mobile phone a nd po rtabl e commu nicati on
sets

n

Instrumentation with low noise as key
factor

Order Codes

Part Number Temperature Range Package Packaging

TS921IN
TS921ID/IDT SO Tube or Tape & Reel

TS921IPT

December 2004 Revision 2 1/13

-40°C, +125°C
(Thin Shrink Outline Package)

DIP Tube

TSSOP

Tape & Reel

TS921 Pin Diagram

1 Pin Diagram

Figure 1 : Pin co nn e ct io ns (top view)

N.C.

Inverting Input

Non-inverting Input

V

1

2

-

+

3

45

CC

8

7

6

N.C.

V

CC

Output

N.C.

+

2 Absolute Maximum Ratings

Table 1: Key parameters and their absolute maximum rating s

Symbol Parameter Value Unit

VCC

T

Supply voltage

Vid

Differential Input Voltage

V

Input Voltage VDD-0.3 to VCC+0.3

i

Storage Temperature

stg

Maximum Junction Temperature

T

j

Thermal Resistance Junction to Ambient

R

SO8

thja

TSSOP8 120
DIP8 85

HBM: Human Body Model

ESD

MM: Machine Model
CDM: Charged Device Model 1.5 kV
Output Short Circuit Duration

Latch-up Immunity 200 mA
Soldering Temperature (10sec), leaded version 250 °C
Soldering Temperature (10sec), unleaded version 260 °C

1) All voltages values, except differential voltage are with respect to network ground terminal.

2) Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If Vid > ±1V, the maximu m in pu t cu r -

rent must not exceed ±1m A . In this case (Vid > ±1V) an input serie resist or must be added to limit input current.

3) Human body model, 100pF discharged throu gh a 1.5kΩ resistor into pin of device.

4) Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with no external series resistor
(inter nal resistor < 5

5) There is no short-circui t protec tion inside the device: sh ort-circuits from the output to V

output c urrent is approximately 80mA, independent of the m agnitude of V
circuits on all amplifiers.

1

2

3

4

Ω), into pin to pin of device.

14 V

±1 V

-65 to +150 °C
150 °C

125

1.5 kV

100 V

see note

can cause excessive heating. The maximum

. Destructive dissip at i on can result f rom simultaneous shor t-

cc

cc

5

V

°C/W

Table 2: OPERATING CONDITIONS

Symbol Parameter Value Unit

V
V

T

2/13

Supply voltage

CC

Common Mode Input Voltage Range

icm

Operating Free Air Temperature Range

oper

2.7 to 12 V

-0.2 to VCC +0.2

V

DD

-40 to +125 °C

V

Electrical Characteristics TS921

3 Electrical Characteristics

Table 3: V

= 3V, V

CC

= 0V, V

DD

= VCC/2, RL connected to Vcc/2, T

icm

= 25°C (unless

amb

otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

Input Offset Voltage

V

io

Tmin.

≤ Tamb ≤ Tmax.

DV

V

V

A

GBP

Input Offset Voltage Drift

io

Input Offset Current

I

io

V

= 1.5V

out

Input Bias Current

I

I

ib

OH

OL

vd

CC

= 1.5V

V

out

High Level Output Voltage RL = 600Ω
RL = 32Ω

Low Level Output Voltage RL = 600Ω
RL = 32Ω 180

Large Signal Voltage Gain (V

= 2Vpk-pk)RL = 600Ω

out

RL = 32Ω
Supply Current

no load, V

= Vcc/2

out

Gain Bandwidth Product
RL = 600

Ω 4

2

15 100

2.87

2.63

35
16

11.5

CMR Common Mode Rejection Ratio 60 80 dB

SVR

Supply Voltage Rejection Ratio
Vcc = 2.7 to 3.3 V 60 80

I

Output Short Circuit Current

o

50 80 mA

SR Slew Rate 0.7 1.3 V/

Phase Margin at Unit Gain

φm

G

m

e

n

THD

RL = 600
Gain Margin

RL = 600
Equivalent Input Noise Voltage

f = 1kHz

Total Harmonic Distortion
V

Ω, C

=100pF

L

Ω, C

=100pF

L

= 2Vpk-pk, F = 1kHz, Av = 1, RL =600Ω

out

68

12

9

0.005

3
5

µV/°C

30

100

Degrees

mV

nA

nA

V

mV

V/mV

mA

MHz

dB

µs

dB

nV

----------- ­Hz

%

Table 4: VCC = 5V, V

= 0V, V

DD

= VCC/2, RL connected to Vcc/2, T

icm

= 25°C (unless

amb

otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

V

DV

Input Offset Voltage

io

T

≤ T

min.

Input Offset Voltage Drift

io

Input Offset Current

I

io

V

= 1.5V

out

amb

≤ T

max.

2

3
5

µV/°C

30

mV

nA

3/13

TS921 Electrical Characteristics

Table 4: VCC = 5V, V

= 0V, V

DD

= VCC/2, RL connected to Vcc/2, T

icm

= 25°C (unless

amb

otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

Input Bias Current

I

ib

V

= 1.5V

out

V

OH

V

OL

A

vd

I

cc

GBP

High Level Output Voltage RL = 600Ω
RL = 32Ω

Low Level Output VoltageRL = 600Ω
RL = 32Ω 300

Large Signal Voltage Gain (V

= 2Vpk-V

out

pk) RL

= 600Ω

RL = 32Ω
Supply Current

no load, V
Gain Bandwidth Product R

out

= V

cc/2

= 600Ω

L

4.85

CMR Common Mode Rejection Ratio 60 80 dB

SVR

Supply Voltage Rejection Ratio
V

= 4.5 to 5.5V

cc

I

Output Short Circuit Current

o

60 80
50 80 mA

SR Slew Rate 0.7 1.3 V/

Phase Margin at Unit Gain

φm

G

m

e

n

THD

= 600Ω, CL =100pF

R

L

Gain Margin
R

= 600Ω, CL =100pF

L

Equivalent Input Noise Voltage
f = 1kHz

Total Harmonic Distortion
V

= 2Vpk-pk, F = 1kHz, Av = 1, RL =600Ω

out

15 100

4.4
120

35
16

11.5

4

Degrees

68

12

9

0.005

nA

V

mV

V/mV

mA

MHz

dB

µs

dB

nV

----------- ­Hz

%

4/13

Electrical Characteristics TS921

Table 5: V

= 3V, VDD = 0V, RL, CL connected to V

CC

CC/2

, T

= 25°C (unless otherwise specified)

amb

Symbol Conditions Value Unit

V
A
I

CC

V

V
V

I

sink

I

source

GBP

SR

φm

icm
OH
OL

io

vd

RL = 10kΩ
No load, per operator

RL = 10kΩ
RL = 10kΩ
VO = 3V
VO = 0V
R

= 600kΩ

L

R

= 10kΩ, CL = 100pF

L

R

= 600kΩ

L

0mV

200 V/mV

1.2 mA

-0.2 to 3.2 V

2.95 V
25 mV
80 mA
80 mA

4MHz

1.3 V/
68 Degrees

µs

5/13

TS921 Electrical Characteristics

1E+05

1E+06

Figure 1: Output Short Circuit Current vs

Output Voltage

100

80

60

40

20

0

-20

-40

-60

Output Short-CircuitCurrent (mA)

-80

-100

-120
012345

Sink

Vcc=0/5V

Source

OutputVoltage (V)

Figure 2: Output Short Circuit Current vs

Output Voltage

100

80

60

40

20

0

-20

-40

-60

OutputShort-Circuit Current (mA)

-80

-100
00,511,522,53

Sink

Vcc=0/3V

Source

Output Voltage (V)

Figure 4: Voltage Gain And Phase vs

Frequency

60

40

gain

20

Gain (d B)

0

-20
1E+02 1E+03 1E+04

phase

Freq ue ncy (Hz )

Rl=10k
Cl=100pF

1E+07 1E+08

180

120

60

0

-60

Figure 5: Equivalent Input Noise Voltage vs

Frequency

30

25

20

15

10

5

Equivalent Input Noise (nV/sqrt(Hz)

0

0.01 0.1 1 10 100

VCC=±1.5V

R

=100Ω

L

Frequency (kHz)

Phase (Deg)

Figure 3: Output Supply Current vs Supply

Voltage

6/13

Figure 6: THD + Noise vs Frequency

0.02

0.015

RL=2k Vo=10Vpp

V

=±6V Av= 1

0.01

THD+Noise (%)

0.005

0

0.01 0.1 1 10 100

CC

Frequency (kHz)

Electrical Characteristics TS921

Figure 7: THD + Noise vs Frequency

0.04

0.032

0.024

0.016

THD+Noise (%)

0.008

RL=32Ω Vo=4Vpp

V

=±2.5V Av= 1

CC

0

0.01 0.1 1 10 100
Frequency (kHz)

Figure 8: THD + Noise vs Frequency

0.7

0.6

0.5

0.4

0.3

THD+Noise (%)

0.2

0.1

0

RL=32Ω Vo=2Vpp

=±1.5V Av= 10

V

CC

0.01 0.1 1 10 100
Frequency (kHz)

Figure 10: THD Noise vs Output Vo ltage

10

1

THD+Noise (%)

0.1

0.01
0 0.2 0.4 0.6 0.8 1

RL=32Ω f=1kHz

=±1.5V Av= -1

V

CC

Vout(Vrms)

Figure 11: THD Noise vs Output Voltage

10

1

RL=2kΩ f=1kHz

V

=±1.5V Av= -1

0.1

THD+Noise (%)

0.01

0.001
0 0.2 0.4 0.6 0.8 1 1.2

CC

Vout(Vrms)

Figure 9: THD Noise vs Output Voltage

10,000

1,000

0,100

THD+Nois e (%)

0,010

0,001

RL=600Ω f=1kHz
VCC=0/3V Av= -1

0 0,2 0,4 0,6 0,8 1 1,2

Vout (Vrms)

Figure 12: Open Loop Gain and Phase vs

Frequency

50

40

30

Gain(dB)

20

10

0

1E+2 1E+3 1E+4 1E+5 1E+6 1E+7 1E+8

CL=500pF

Frequency (Hz)

180

120

Phase (Deg)

60

0

7/13

TS921 Macromodels

4 Macromodels

Warning: Please consider following remarks before using this macromodel:

All models are a trade-off between accuracy and complexity (i.e. simulation time).
Macromodels are not a subst itute to bre adbo ardin g; rathe r, they con firm the validity of a design ap proac h
and help to select surrounding component values.
A macromodel emulates the NOMINAL performance of a TYPICAL device within SPECIFIED OPERATING
CONDITIONS (i.e . temper ature , supply vol tage, etc .). Thus the macrom odel is often not as exha ustiv e as
the datasheet, its goal is to illustrate the main parameters of the product.
Data issued from macromodels use d outside of its specif ied conditions (Vcc , Temperature, etc ) or even
worse: outside of the device operating conditions (Vcc, Vicm, etc) are not reliable in any way.

** Standard Linear Ics Macromodels, 1996.
** CONNECTIONS:
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVE POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS921 1 3 2 4 5 (analog)
*************** ************************* ***************** .MODEL MDTH D IS =1E­8 KF=2.664234E-16 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 8.125000E+00
RIN 15 16 8.125000E+00
RIS 11 15 2.238465E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 153.5u
VOFN 13 14 DC 0
IPOL 13 5 3.200000E-05
CPS 11 15 1e-9
DINN 17 13 MDTH 400E-12
VIN 17 5 -0.100000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.400000E+00
FCP 4 5 VOFP 1.865000E+02
FCN 5 4 VOFN 1.865000E+02
FIBP 2 5 VOFP 6.250000E-03
FIBN 5 1 VOFN 6.250000E-03
* GM1 STAGE ***************
FGM1P 119 5 VOFP 1.1
FGM1N 119 5 VOFN 1.1
RAP 119 4 2.6E+06
RAN 119 5 2.6E+06
* GM2 STAGE ***************
G2P 19 5 119 5 1.92E-02
G2N 19 5 119 4 1.92E-02
R2P 19 4 1E+07
R2N 19 5 1E+07
**************************

8/13

Package Mechanical Data TS921

VINT1 500 0 5
GCONVP 500 501 119 4 19.38!send ds VP, I(VP)=(V119-V4)/2/Ut VP 501 0 0
GCONVN 500 502 119 5 19.38!send ds VN, I(VN)=(V119-V5)/2/Ut VN 502 0 0
********* orientation isink isourc e *******
VINT2 503 0 5
FCOPY 503 504 VOUT 1
DCOPYP 504 505 MDTH 400E-9
VCOPYP 505 0 0
DCOPYN 506 504 MDTH 400E-9
VCOPYN 0 506 0
***************************
F2PP 19 5 poly(2) VCOPYP VP 0 0 0 0 0.5!multip ly I(vout)*I(VP)=Iout*(V119- V4)/
2/Ut
F2PN 19 5 poly(2) VCOPYP VN 0 0 0 0 0.5 !multiply I(vout)*I(VN)=Iout*(V119­V5)/2/Ut
F2NP 19 5 poly(2) VCOPYN VP 0 0 0 0 1.75 !multiply I(vout)*I(VP)=Iout*(V119­V4)/2/Ut
F2NN 19 5 poly(2) VCOPYN VN 0 0 0 0 1.75 !multiply I(vout)*I(VN)=Iout*(V119­V5)/2/Ut
* COMPENSATION ************
CC 19 119 25p
* OUTPUT***********
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 6.250000E+02
VIPM 28 4 5.000000E+01
HONM 21 27 VOUT 6.250000E+02
VINM 5 27 5.000000E+01
VOUT 3 23 0
ROUT 23 19 6
COUT 3 5 1.300000E-10
DOP 19 25 MDTH 400E-12
VOP 4 25 1.052
DON 24 19 MDTH 400E-12
VON 24 5 1.052
.ENDS

5 Package Mechanical Data

9/13

TS921 Package Mechanical Data

5.1 DIP8 package

Plastic DIP-8 MECHANICAL DATA

DIM.

A 3.3 0.130

a1 0.7 0.028

B 1.39 1.65 0.055 0.065

B1 0.91 1.04 0.036 0.041

b 0.5 0.020

b1 0.38 0.5 0.015 0.020

D 9.8 0.386
E 8.8 0.346

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 7.1 0.280

I 4.8 0.189
L 3.3 0.130
Z 0.44 1.6 0.017 0.063

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

10/13

P001F

Package Mechanical Data TS921

5.2 SO8 package

SO-8 MECHANICAL DATA

DIM.

A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.04 0.010
A2 1.10 1.65 0.043 0.065

B 0.33 0.51 0.013 0.020

C 0.19 0.25 0.007 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

e 1.27 0.050

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.40 1.27 0.016 0.050

k ˚ (max.)

ddd 0.1 0.04

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8

0016023/C

11/13

TS921 Package Mechanical Data

5.3 TSSOP8 package

TSSOP8 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.2 0.047
A1 0.05 0.15 0.002 0.006
A2 0.80 1.00 1.05 0.031 0.039 0.041

b 0.19 0.30 0.007 0.012

c 0.09 0.20 0.004 0.008
D 2.90 3.00 3.10 0.114 0.118 0.122
E 6.20 6.40 6.60 0.244 0.252 0.260

E1 4.30 4.40 4.50 0.169 0.173 0.177

e 0.65 0.0256
K0˚ 8˚ 0˚ 8˚

L 0.45 0.60 0.75 0.018 0.024 0.030

L1 1 0.039

mm. inch

12/13

0079397/D

Summary of Changes TS921

6 Summary of Changes

Date Revision Description of Changes

01 Feb 2001 1 First Release

01 Dec 2004 2

Modifications on AMR table page 2 (explanation of Vid and Vi limits, ESD
MM and CDM values added, Rthja added)

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licens e is g ran te d
by impl i cation or ot herwise under any p atent or pa tent right s of STMicroelectro ni cs. Specif i cations mentioned i n this publi cation are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authori zed for use as cr i tical compon ents in life support devic es or systems without ex press written approval of STMicroel ectronics.

The ST logo is a registered trademark of STMicroelectronics

All other na m es are the prop erty of thei r res p ective ow ners

© 2004 STM i croelectr onics - All rights rese rved

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13/13