ST MICROELECTRONICS TS 912 D Datasheet

CMOS DUAL OPERATIONAL AMPLIFIER

■ RAIL TO RAIL INPUTAND OUTPUT VOLT-

AGE RANGES

■ SINGLE (OR DUAL) SUPPLY OPERATION

FROM 2.7V TO 16V

■ EXTREMELY LOW INPUT BIAS CURRENT :

1pA typ

■ LOW INPUT OFFSET VOLTAGE : 2mV max.

■ SPECIFIED FOR 600Ω AND 100Ω LOADS

■ LOW SUPPLY CURRENT : 200µA/Ampli

(VCC= 3V)

■ LATCH-UP IMMUNITY

■ ESD TOLERANCE : 3KV

■ SPICE MACROMODEL INCLUDED IN THIS-

SPECIFICATION

TS912

RAIL TO RAIL

N

DIP8

(Plastic Package)

DESCRIPTION

The TS912 is a RAIL TO RAIL CMOS dual opera­tional amplifier designed to operate with a single
or dual supply voltage.

The input voltage range V
ply rails V

CC

+

and V

CC

-

includes the two sup-

icm

.

At 3V, the output reaches :

❑ V
❑ V

-

+30mV V

CC

-

+300mVV

CC

+

-40mV with RL= 10kΩ

CC

+

-400mV with RL= 600Ω

CC

This product offers a broad supply voltage operat­ing rangefrom2.7V to 16V and a supply current of
only 200µA/amp @ VCC= 3V.

Source and sink output current capability is typi­cally 40mA at VCC= 3V, fixed by an internal limita­tion circuit.

ORDER CODE

Part Number Temperature Range

TS912I/AI/BI -40, +125°C ••

N=Dual in Line Package (DIP)
D=Small Outline Package (SO) - also available in Tape & Reel (DT)

Package

ND

D

SO8

(Plastic Micropackage)

PIN CONNECTIONS (top view)

Output 1

Inverting Input 1

Non-inverting Inp ut 1

1
2

-

+

3

V

45

CC

-

+

+

V

8

CC

Output 2

7
6

Inverting Input 2
Non-inverting Input 2

December 2001

1/12

TS912

SCHEMATIC DIAGRAM (1/2 TS912)

Non-inverting

Input

Inverting

Input

Internal

Vref

V

CC

Output

V

CC

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

T

T

1. All voltages values, except differential voltage are with respect to network ground terminal.

2. Differential voltagesare non-inverting input terminal with respect to the inverting input terminal.

3. The magnitude of input and output voltages must never exceed V

Supply voltage

CC

V

id Differential Input Voltage

V

Input Voltage

i

I

Current on Inputs ±50 mA

in

I

Current on Outputs ±130 mA

o

Operating Free Air Temperature Range

oper

Storate Temperature -65 to +150 °C

stg

1)

2)

3)

18 V

±18 V

-0.3 to 18 V

TS912I/AI/BI -40 to + 125

+

+0.3V.

CC

OPERATING CONDITIONS

Symbol Parameter Value Unit

V
V

Supply voltage 2.7 to 16 V

CC

Common Mode Input Voltage Range

icm

V

CC

-

-0.2 to V

CC

+

+0.2

°C

V

2/12

TS912

ELECTRICAL CHARACTERISTICS

+

V

= 3V, V

CC

Symbol Parameter Min. Typ. Max. Unit

V

io

∆V

io

I

io

I

ib

I

CC

CMR

SVR

A

vd

V

OH

-

= 0V, RL,CLconnected to V

cc

Input Offset Voltage (Vic=Vo=V

T

≤ T

amb

≤ T

max.

min.

CC/2,Tamb

) TS912

CC/2

=25°C (unless otherwise specified)

TS912A
TS912B
TS912

TS912A
TS912B

10

5
2

12

7
3

Input Offset Voltage Drift 5 µV/°C

amb

amb

amb

≤ T

1)

≤ T

≤ T

1)

max.

max.

= 1, no load)

VCL

max.

Input Offset Current

T

≤ T

min.

Input Bias Current

T

≤ T

min.

Supply Current (per amplifier,A

≤ T

T

min.

Common Mode Rejection Ratio

V

= 0 to 3V,Vo= 1.5V

ic

+

Supply Voltage Rejection Ratio (V

= 2.7 to 3.3V,Vo=V

CC

Large Signal Voltage Gain (RL= 10kΩ,Vo= 1.2V to 1.8V)

≤ T

T

min.

amb

≤ T

max.

CC/2

)

50 80 dB

3
2

1 100

200

1 150

300

200 300

400

70 dB

10

V/mV

High Level Output Voltage (Vid= 1V)

= 100kΩ

R

L

R

L

R

L

R

L

= 10kΩ
= 600Ω
= 100Ω

2.95

2.9

2.3

2.96

2.6
2

mV

pA

pA

µA

V

≤ T

T

min.

amb

≤ T

max.

RL= 10kΩ

= 600Ω

R

L

2.8

2.1

Low Level Output Voltage (Vid= -1V)

= 100kΩ

R

V

OL

I

o

GBP

SR

SR

L

= 10kΩ

R

L

= 600Ω

R

L

= 100Ω

R

L

≤ T

T

min.

amb

≤ T

max.

RL= 10kΩ

= 600Ω

R

L

Output Short Circuit Current (Vid= ±1V) Source (Vo=V

Sink (V

Gain Bandwith Product
(A

= 100, RL= 10kΩ,CL= 100pF,f = 100kHz)

VCL

+

Slew Rate (A

-

Slew Rate (A

=1,RL= 10kΩ,CL= 100pF,Vi= 1.3V to 1.7V)

VCL

=1,RL= 10kΩ,CL= 100pF,Vi= 1.3V to 1.7V)

VCL

o=VCC

30
300
900

-

)

CC

+

)

20
20

40

40

0.8 MHz

0.4 V/µs

0.3 V/µs

50
70

400

100
600

φm Phase Margin 30 Degrees

Equivalent Input Noise Voltage (R

en

1. Maximum values including unavoidable inaccuracies of the industrial test

= 100Ω, f = 1kHz)

s

30 nV/√Hz

mV

mA

3/12

TS912

ELECTRICAL CHARACTERISTICS

+

V

= 5V, V

CC

Symbol Parameter Min. Typ. Max. Unit

V

io

∆V

io

I

io

I

ib

I

CC

CMR

SVR

A

vd

V

OH

-

= 0V, RL,CLconnected to V

cc

Input Offset Voltage (Vic=Vo=V

T

≤ T

amb

≤ T

max.

min.

CC/2,Tamb

) TS912

CC/2

=25°C (unless otherwise specified)

TS912A
TS912B
TS912

TS912A
TS912B

10

5
2

12

7
3

Input Offset Voltage Drift 5 µV/°C

amb

amb

amb

≤ T

1)

≤ T

≤ T

1)

max.

max.

= 1, no load)

VCL

max.

Input Offset Current

T

≤ T

min.

Input Bias Current

T

≤ T

min.

Supply Current (per amplifier,A

≤ T

T

min.

Common Mode Rejection Ratio

V

= 1.5 to 3.5V, Vo= 2.5V

ic

+

Supply Voltage Rejection Ratio (V

= 3 to 5V,Vo=V

CC

CC/2

Large Signal Voltage Gain (RL= 10kΩ,Vo= 1.5V to 3.5V)

≤ T

T

min.

amb

≤ T

max.

60 85 dB

)

55 80 dB
10

7

1 100

200

1 150

300

230 350

450

40

V/mV

High Level Output Voltage (Vid= 1V)

= 100kΩ

R

L

R

L

R

L

R

L

= 10kΩ
= 600Ω
= 100Ω

4.95

4.9

4.25

4.95

4.55

3.7

mV

pA

pA

µA

V

≤ T

T

min.

amb

≤ T

max.

RL= 10kΩ

= 600Ω

R

L

4.8

4.1

Low Level Output Voltage (Vid= -1V)

= 100kΩ

R

V

GBP

SR

SR

en

V

O1/VO2

L

= 10kΩ

OL

≤ T

T

min.

Output Short Circuit Current (Vid= ±1V) Source (Vo=V

I

o

amb

≤ T

max.

Gain Bandwith Product
(A

= 100, RL= 10kΩ,CL= 100pF,f = 100kHz)

VCL

+

Slew Rate (A

-

Slew Rate (A
Equivalent Input Noise Voltage (R

=1,RL= 10kΩ,CL= 100pF,Vi= 1V to 4V)

VCL

=1,RL= 10kΩ,CL= 100pF,Vi= 1V to 4V)

VCL

= 100Ω, f = 1kHz)

s

R

L

= 600Ω

R

L

= 100Ω

R

L

RL= 10kΩ

= 600Ω

R

L

Sink (V

o=VCC

-

)

CC

+

)

45
45

40
350

1400

65

65

1 MHz

0.8

0.6 V/µs
30 nV/√Hz

Channel Separation (f = 1kHz) 120 dB

50
100
500

150
750

φm Phase Margin 30 Degrees

1. Maximum values including unavoidable inaccuracies of the industrial test

mV

mA

4/12

TS912

ELECTRICAL CHARACTERISTICS

+

V

= 10V, V

CC

Symbol Parameter Min. Typ. Max. Unit

V

io

∆V

io

I

io

I

ib

I

CC

CMR

SVR

A

vd

V

OH

-

= 0V, RL,CLconnectedto V

cc

Input Offset Voltage (Vic=Vo=V

T

≤ T

amb

≤ T

max.

min.

CC/2,Tamb

) TS912

CC/2

=25°C (unless otherwise specified)

TS912A
TS912B
TS912

TS912A
TS912B

10

5
2

12

7
3

Input Offset Voltage Drift 5 µV/°C

amb

amb

≤ T

1)

≤ T

1)

max.

max.

Input Offset Current

T

≤ T

min.

Input Bias Current

T

≤ T

min.

Supply Current (per amplifier,A

≤ T

T

min.

amb

≤ T

max.

= 1, no load)

VCL

1 100

200

1 150

300

400 600

700

Common Mode Rejection Ratio

V

= 3 to 7V,Vo=5V

ic

= 0 to 10V,Vo=5V

V

ic

+

Supply Voltage Rejection Ratio (V

= 5 to 10V,Vo=V

CC

CC/2

Large Signal Voltage Gain (RL= 10kΩ,Vo= 2.5V to 7.5V)

≤ T

T

min.

amb

≤ T

max.

)

60
50

90

75
60 90 dB
15

10

50

V/mV

High Level Output Voltage (Vid= 1V)

= 100kΩ

R

L

R

L

R

L

R

L

= 10kΩ
= 600Ω
= 100Ω

9.95

9.85
9

9.95

9.35

7.8

mV

pA

pA

µA

dB

V

≤ T

T

min.

amb

≤ T

max.

RL= 10kΩ

= 600Ω

R

L

9.8

8.8

Low Level Output Voltage (Vid= -1V)

= 100kΩ

R

V

OL

I

o

GBP

SR

SR

L

= 10kΩ

R

L

= 600Ω

R

L

= 100Ω

R

L

≤ T

T

min.

amb

≤ T

max.

RL= 10kΩ

= 600Ω

R

L

Output Short Circuit Current (Vid= ±1V) Source (Vo=V

Sink (V

Gain Bandwith Product

= 100, RL= 10kΩ,CL= 100pF,f = 100kHz)

(A

VCL

+

Slew Rate (A

-

Slew Rate (A

=1,RL= 10kΩ,CL= 100pF,Vi= 2.5V to 7.5V)

VCL

=1,RL= 10kΩ,CL= 100pF,Vi= 2.5V to 7.5V)

VCL

o=VCC

50

650

2300

-

)

CC

+

)

45
50

65
75

1.4 MHz

1.3 V/µs

0.8

50
150
800

150
900

φm Phase Margin 40 Degrees

Equivalent Input Noise Voltage (R

en

THD

1. Maximum values including unavoidable inaccuracies of the industrial test

TotalHarmonic Distortion
(A

=1,RL= 10kΩ,CL= 100pF,Vo= 4.75V to 5.25V,f = 1kHz)

VCL

C

Input Capacitance 1.5 pF

in

= 100Ω, f = 1kHz)

s

30 nV/√Hz

0.02 %

mV

mA

5/12

TS912

TYPICAL CHARACTERISTICS
Figure 1 : Supply Current (each amplifier)

vs Supply Voltage

600

T = 25 C

µ

500

CC

amb

A=1

VCL

V=V /2

OCC

400

300

200

SUPPLY CURRENT, I ( A)

100

0 4 8 12 16

SUPPLYVOLTAGE, V (V)

CC

Figure 3a : High Level Output Voltagevs High

Level Output Current

5

T=25C

amb

OH

4

V =100mV

id

V = +5V

CC

Figure 2 : Input Bias Current vs Temperature

100

V = 10V

CC

V=5V

ib

i

No loa d

10

INPUT BIAS CURRENT, I (pA)

1

25 50 75 100 125

TEMPER ATURE, T ( C)

amb

Figure 3b : High Level Output Voltage vs High

Level Output Current

20

T=25C

amb

V = 100mV

16

OH

id

V=+16V

CC

3

2

V = +3V

CC

1

OUTPUT VOLTAGE, V (V)

0

-70 -56 -42 -28 -14 0

OUTPUT CURRENT, I (mA)

OH

Figure 4a : Low Level Output Voltagevs Low

Level Output Current

5

T=25C

amb

id

V = +3V

CC

V = +5V

CC

14 28 42 56 70

OUTPUT CURRENT, I (mA)

OL

OL

OUTPUT VOLTAGE, V (V)

4

3

2

1

0

V = -100mV

12

V=+10V

CC

8

4

OUTPUT VOLTAGE, V (V)

0

-70 -56 -42 -28 -14 0

OUTP UT C URRENT, I (mA)

OH

Figure 4b : Low Level Output Voltage vs Low

Level Output Current

10

T=25C

amb
id

V = 16V

CC

V=10V

CC

14 28 42 56 70

OUTP UT CURRENT, I (mA)

OL

OL

OUTPUT VOLTAGE, V (V)

8

6

4

2

0

V = -100mV

6/12

TS912

Figure 5a : Gain and Phase vs Frequency

50
40
30

PHASE

20

T=25 C

amb

V = 10V

CC

GAIN (dB)

R = 10k

10

C = 100pF
A=100

VCL

0

-10

23

10

Ω

L
L

10

FREQUENCY, f (Hz)

GAIN

Gain
Bandwidth
Produc t

4

10510

10

Phase
Margin

6

10

0
45
90
135
180

7

Figure 6a : Gain Bandwidth Product vs Supply

Voltage

1800

1400

T = 25 C

amb

R = 10k
C = 100pF

Ω

L
L

PHASE (Degrees)

Figure 5b : Gain and Phase vs Frequency

50
40
30

T = 25 C

20

V = 10V

GAIN (dB)

R = 600

10

C = 100pF
A = 100

0

-

10

23104

10

PHASE

amb

CC

Ω

L
L
VCL

FRE QUE NCY, f (Hz)

GAIN

Gain
Ba ndwidth
Product

10510

Phase
Marg in

6

10

10

7

0
45
90
135
180

PHASE (Degrees)

Figure 6b : Gain Bandwidth Product vs Supply

Voltage

1800

T = 25 C

amb

1400

R = 600
C = 100pF

Ω

L

L

1000

600

200

GAIN BANDW. PROD., GBP (kHz)

0481216

SUPPLY VOLTAGE, V (V)

CC

Figure 7a : Phase Margin vs Supply Voltage

60

T = 25 C

amb

R = 10kΩ

50

φ

40

30

20

PHASE MARGIN, m (Degrees)

L

C = 100pF

L

0481216

S UPP LY VOLTAGE, V (V)

CC

1000

600

200

GAIN BANDW.PROD., GBP (kHz)

0481216

S UPPLY VOLTAGE, V (V)

CC

Figure 7b : Phase Margin vs Supply Voltage

60

T = 25 C

amb

R = 600

50

C = 100pF

40

30

20

PHASE MARGIN, m (Degrees)φ

0481216

Ω

L
L

S UP PLY VOLTAGE, V (V)

CC

7/12

TS912

Figure 8 : Input Voltage Noise vs Frequency

EQUIVALENT INPUT

VOLTAGE NOISE (nV/VHz)

150

100

50

0

10 100

FREQUENCY (Hz)

=10V

V

CC

=25 CT

amb

=100

R

Ω

S

100 0 100 00

8/12

TS912

MACROMODEL
Applies to : TS912 (VCC= 3V)

** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVE POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS912_3 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 1.271505E+01
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.125860E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.000000E+00
FCN 5 4 VOFN 5.000000E+00
* AMPLIFYING STAGE
FIP 5 19 VOFP 2.750000E+02
FIN 5 19 VOFN 2.750000E+02
RG1 19 5 1.916825E+05

RG2 19 4 1.916825E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 1.3E+03
HZTN 5 30 VOFN 1.3E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 150
HONM 21 27 VOUT 3800
VINM 5 27150
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 75
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25 VSCP1 0.8E8
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69 VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = le seuil au dessus de vio * 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP163640
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = le seuil au dessous de vio * 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS

ELECTRICAL CHARACTERISTICS

+

V

= 3V, VCC- = 0V, RL,CLconnected to V

CC

CC/2,Tamb

Symbol Conditions Value Unit

V

io

A

vd

I

CC

V

icm

V

OH

V

OL

I

sink

I

source

GBP

SR

RL= 10kΩ
No load, per operator 200 µA

RL= 10kΩ
RL= 10kΩ
VO=3V
VO=0V
R

= 10kΩ,CL= 100pF

L

RL= 10kΩ,CL= 100pF

=25°C (unless otherwise specified)

0mV

10 V/mV

-0.2 to 3.2 V

2.96 V
30 mV
40 mA
40 mA

0.8 MHz

0.3 V/µs

9/12

TS912

MACROMODEL
Applies to : TS912 (VCC= 5V)

** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVE POWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
* 6 STANDBY
.SUBCKT TS912_5 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.564344E-14 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 6.500000E+00
RIN 15 16 6.500000E+00
RIS 11 15 7.322092E+00
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0.000000E+00
VOFN 13 14 DC 0
IPOL 13 5 4.000000E-05
CPS 11 15 2.498970E-08
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.000000E+00
FCP 4 5 VOFP 5.750000E+00
FCN 5 4 VOFN 5.750000E+00
ISTB0 5 4 500N
* AMPLIFYING STAGE
FIP 5 19 VOFP 4.400000E+02
FIN 5 19 VOFN 4.400000E+02

RG1 19 5 4.904961E+05
RG2 19 4 4.904961E+05
CC 19 29 2.200000E-08
HZTP 30 29 VOFP 1.8E+03
HZTN 5 30 VOFN 1.8E+03
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 3800
VIPM 28 4 230
HONM 21 27 VOUT 3800
VINM 5 27230
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 82
COUT 3 5 1.000000E-12
DOP 19 68 MDTH 400E-12
VOP 4 25 1.724
HSCP 68 25 VSCP1 0.8E+08
DON 69 19 MDTH 400E-12
VON 24 5 1.7419107
HSCN 24 69 VSCN1 0.8E+08
VSCTHP 60 61 0.0875
** VSCTHP = le seuil au dessus de vio * 500
** c.a.d 275U-000U dus a l’offset
DSCP1 61 63 MDTH 400E-12
VSCP163640
ISCP 64 0 1.000000E-8
DSCP2 0 64 MDTH 400E-12
DSCN2 0 74 MDTH 400E-12
ISCN 74 0 1.000000E-8
VSCN1 73 74 0
DSCN1 71 73 MDTH 400E-12
VSCTHN 71 70 -0.55
** VSCTHN = le seuil au dessous de vio * 2000
** c.a.d -375U-000U dus a l’offset
ESCP 60 0 2 1 500
ESCN 70 0 2 1 -2000
.ENDS

ELECTRICAL CHARACTERISTICS

VCC+ = 5V, VCC- = 0V, RL,CLconnected to VCC/2,Tamb =25°C (unless otherwise specified)

Symbol Conditions Value Unit

I

10/12

V

io

A

vd

I

CC

V

icm

V

OH

V

OL

I

sink

source

GBP

SR

RL= 10kΩ
No load, per operator 230 µA

RL= 10kΩ
RL= 10kΩ
VO=5V
VO=0V
R

= 10kΩ,CL= 100pF

L

RL= 10kΩ,CL= 100pF

0mV

50 V/mV

-0.2 to 5.2 V

4.95 V
40 mV
65 mA
65 mA

1 MHz

0.8 V/µs

PACKAGE MECHANICAL DATA

8 PINS - PLASTIC DIP

TS912

Dim.

Min. Typ. Max. Min. Typ. Max.

A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065

b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430
E 7.95 9.75 0.313 0.384

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 6.6 0260

i 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060

Millimeters Inches

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TS912

PACKAGE MECHANICAL DATA

8 PINS - PLASTIC MICROPACKAGE (SO)

Dim.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.020
c1 45° (typ.)

D 4.8 5.0 0.189 0.197

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.150 0.157

L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8°(max.)

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use ofsuch information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems withoutexpress written approval of STMicroelectronics.

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