The TS274 devices are low cost, quad
operational amplifiers designed to operate with
single or dual supplies. These operational
amplifiers use the ST silicon gate CMOS process
giving an excellent consumption-speed ratio.
These series are ideally suited for low
consumption applications.
Three power consumptions are availabl e thus
offering the best consumption-sp eed ratio f or you r
application:
■ I
= 10 µA/amp: TS27L4 (very low power)
CC
■ I
= 150 µA/amp: TS27M4 (low power)
CC
■ I
= 1 mA/amp: TS274 (standard)
CC
These CMOS amplifiers offer very high input
impedance and extremely lo w input curren ts . Th e
major advantage v er sus JFET devices is the very
low input currents drift with temperature (see
Figure 5 on page 6).
For enhanced features of TS274, in particular railto-rail capability and low offset voltage, two new
SO-14
(Plastic micropackage)
TSSOP14
(Thin shrink small outline package)
Pin connections (top view)
families, TSV91x and TSV99x will better suit low
voltage applications.
Table 1.Enhanced related families
Part
number
TSV9142.5 - 5.5I/O1.5/4.510801.184.5
TSV9942.5 - 5.5I/O1.5/4.510801.1
February 2008 Rev 31/14
V
CC
range (V)
Rail-to-
rail I/O
V
max
io
(mV)
Iib max
(pA)
A
vd
(dB)
min
ICC max
(mA)
GBP typ
(MHz)
20
(G ≥3)
SR typ
(V/µs)
10
Packages
SO-14,
TSSOP14
SO-14,
TSSOP14
www.st.com
14
Page 2
Absolute maximum ratings and operating conditionsTS274
1 Absolute maximum ratings and operating conditions
Table 2.Absolute maximum ratings (AMR)
SymbolParameterTS274C/ACTS274I/AIUnit
+
V
T
CC
V
V
I
I
oper
T
Supply voltage
Differential input voltage
id
Input voltage
in
Output current for V
o
Input current±5mA
in
Operating free-air temperature range0 to +70-40 to +125°C
Storage temperature range-65 to +150°C
stg
Thermal resistance junction to ambient
R
thja
SO-14
TSSOP14
DIP14
Thermal resistance junction to case
R
thjc
SO-14
TSSOP14
DIP14
HBM: human body model
ESD
MM: machine model
CDM: charged device model
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive
supply voltage.
4. Short-circuits can cause excessive heating and destructive dissipation. Values are typical.
5. Human body model: A 100pF capacitor is charged to the specified voltage, then discharged through a
1.5kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
6. Machine model: A 200pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5Ω). This is done for all couples of
connected pin combinations while the other pins are floating.
7. Charged device model: all pins and the package are charged together to the specified voltage and then
discharged directly to the ground through only one pin. This is done for all pins.
Table 3.Operating conditions
(3)
(1)
18V
(2)
±18V
-0.3 to 18V
+
≥ 15V±30mA
CC
(4)
103
100
80
31
32
33
(5)
(6)
(7)
500V
100V
800V
°C/W
°C/W
SymbolParameterValueUnit
+
V
CC
V
icm
Supply voltage3 to 16V
Common mode input voltage range0 to V
Operating free-air temperature range
T
oper
TS274C
TS274I
2/14
+
- 1.5V
CC
0 to 70
-40 to 125
°C
Page 3
TS274Block diagram and circuit schematics
2 Block diagram and circuit schematics
Figure 1.Block diagram
V
CC
Current
source
x I
differential
E
Input
Second
stage
E
Output
stage
Output
V
CC
3/14
Page 4
Block diagram and circuit schematicsTS274
Figure 2.Schematic diagram (for 1/4 TS274)
15
T
12
T
10
T
11
T
8
T
6
T
Output
T
16
T
14
T
13
T
9
T
7
R1
C1
Input
2
T
5
CC
V
T
1
T
4
T
3
T
27
T
26
T
25
T
24
T
28
T
2
R
4/14
Input
23
T
18
T
17
T
19
T
29
T
22
T
21
T
20
T
CC
V
Page 5
TS274Electrical characteristics
3 Electrical characteristics
Table 4.V
+
= +10V, V
CC
SymbolParameterConditions
Input offset voltage
V
io
Input offset voltage drift22µV/°C
DV
io
I
Input offset current
io
I
Input bias current
ib
V
High level output voltage
OH
Low level output voltageVid = -100mV5050mV
V
OL
A
Large signal voltage gain
vd
GBPGain bandwidth product
CMR
SVR
Common mode rejection
ratio
Supply voltage rejection
ratio
(1)
(1)
-
CC
= 0V, T
V
= +25°C (unless otherwise specified)
amb
= 1.4V, Vic = 0V
o
TS274C/I
TS274AC/AI
≤ T
T
min
amb
TS274C/I
TS274AC/AI
Vic = 5V, Vo = 5V
T
≤ T
min
amb
Vic = 5V, Vo = 5V
T
≤ T
min
amb
V
= 100mV, RL = 10kΩ
id
T
≤ T
min
amb
V
= 5V, RL = 10kΩ,
iC
Vo = 1V to 6V
T
≤ T
min
amb
A
= 40dB, RL = 10kΩ,
v
CL = 100pF, fin = 100kHz
= 1V to 7.4V, Vo = 1.4V65806580dB
V
ic
+
V
= 5V to 10V, Vo = 1.4V60706070dB
CC
≤ T
≤ T
≤ T
≤ T
≤ T
max
max
max
max
max
TS274C/ACTS274I/AI
MinTyp Max Min Typ Max
1.1
0.9105
12
6.5
1
100
1
150
8.2
8.48.288.4
1.1
0.9105
12
6.5
1
200
1
300
8.1
1071510615
3.53.5MHz
Unit
mV
mV
pA
pA
V
V/mV
Supply current (per
I
CC
amplifier)
Output short circuit current Vo = 0V, Vid = 100mV6060mA
I
o
I
Output sink currentVo = VCC, Vid = -100mV4545mA
sink
SRSlew r ate at unity gain
φmPhase margin at unity gain
Overshoot factor3030%
K
OV
Equivalent input noise
e
n
voltage
Av = 1, no load, Vo = 5V
T
≤ T
amb
≤ T
max
min
= 10kΩ, CL = 100pF,
R
L
= 3 to 7V
V
in
A
= 40dB, RL = 10kΩ,
v
CL = 100pF
f = 1kHz, R
= 100Ω3030nV/√Hz
s
1000 1500
1600
1000 1500
1700
5.55.5V/µs
4040Degrees
Vo1/Vo2Channel separation120120dB
1. Maximum values including unavoidable inaccuracies of the industrial test.
5/14
µA
Page 6
Electrical characteristicsTS274
5
4
3
2
1
0
-10 -8 -6 -4 -2 0
amb
id
T = 25˚C
V = 100mV
V = 5V
CC
OH
OUTPUT CURRENT, I (mA)
OUTPUT VO LTAG E, V (V)
OH
CC
V = 3V
Figure 3.Supply current (each amplifier) vs.
supply voltage
2.0
µ
1.5
CC
1.0
T = 25°C
amb
A = 1
V
V = V / 2
O CC
0.5
SUPPLY CURRENT, I ( A)
0 4 8 12 16
SUPPLY VOLTAGE, V (V)
CC
Figure 5.Input bias current vs. free-air
temperature
100
V = 10V
IB
CC
V = 5V
ic
Figure 4.High level output voltage vs. high
level output current
20
T = 25˚C
amb
V = 100mV
OH
16
id
V = 16V
CC
12
8
V = 10V
CC
4
OUTPUT VOLTAGE, V (V)
0
-50 -40 -30 -20 -10 0
OUTPUT CURRENT, I (mA)
OH
Figure 6.Low level output voltage vs. low
level output current
1.0
V = 3V
OL
0.8
CC
10
INPUT BIAS CURRENT, I (pA )
1
25 50 75 100 125
TEMPERATURE, T (˚C)
amb
Figure 7.High level output voltage vs. high
level output current
0.6
V = 5V
CC
0.4
T = 25°C
0.2
OUTPUT VOLTAGE, V (V)
amb
V = 0.5V
ic
V = -100mV
id
0 1 2 3
OUTPUT CURRENT, I (mA)
OL
Figure 8.Low level output voltage vs. low
level output current
3
V = 10V
CC
OL
V = 16V
2
CC
1
T = 25°C
amb
V = 0.5V
i
V = -100mV
OUTPUT VOLTAGE, V (V)
id
0 4 8 12 16 20
OUTPUT CURRENT, I (mA)
OL
6/14
Page 7
TS274Electrical characteristics
Figure 9.Open loop frequency response and
phase shift
50
40
GAIN
30
20
10
GAIN (dB)
0
-10
10
PHASE
T= 25°C
amb
+
V=10V
CC
R = 10k
C = 100pF
A=100
23
L
L
VCL
10
Ω
10
Phase
Margin
Gain
Bandwidth
Product
4
10
5
10
0
45
90
135
180
7
6
10
FREQUENCY, f (Hz)
Figure 11. Gain bandwidth product vs. supply
voltage
5
4
3
Figure 10. Phase margin vs. capacitive load
70
T
= 25°C
amb
L
V
CC
Ω
=1
60
(Degrees)
m
φ
R = 10k
A
V=10V
50
PHAS E (Degrees)
40
30
PHASE MARGIN,
200
6040
CAPACITANCE, C
L
80
(pF )
Figure 12. Slew rate vs. supply voltage
7
T
= 25°C
6
5
amb
R = 10k
C = 100pF
Ω
L
L
SR
s)
μ
100
2
1
0
GAIN BANDW. PROD., GBP (MHz)
481216
SUPPLY VOLTAGE, V
T
= 25°C
amb
L
L
V
=1
CC
Ω
(V)
R = 10k
C = 100pF
A
4
3
SLEW RATES, SR (V/
2
46810121416
SUPPLY VO LTAGE, V(V)
SR
CC
Figure 13. Phase margin vs. supply voltage Figure 14. Input voltage noise vs. frequency
48
44
40
φ
36
T
= 25°C
amb
L
L
V
Ω
=1
R = 10k
32
C = 100pF
A
28
PHASE MARGIN, m (Degrees)
04 8
SUPPLY VO LTAGE, V(V)
12
16
CC
300
V
= 10V
CC
= 25°C
T
amb
R
=100
200
S
Ω
100
VOLTAGE (nV/VHz)
EQUIVALENT INPUT NOISE
0
110
100
1000
FREQUENCY (Hz)
7/14
Page 8
MacromodelTS274
4 Macromodel
4.1 Important note concerning this macromodel
Please consider the following remarks before using this macromodel.
●All models are a trade-off between accuracy and complexity (i.e. simulation time).
●Macromodels are not a substitute to breadboarding; rather, they confirm the validity of
a design approach and help to select surrounding component values.
●A macromodel emulates the nominal p erf ormance of a typical de vice within specified
operating conditions (temperature, supply voltage, for e xample). Thus the
macromodel is often not as exhaustive as the datasheet, its purpose is to illustrate the
main parameters of the product.
Data derived from macromodels used outside of the specified conditions (V
for example) or even worse, outside of the device operating conditions (V
example), is not reliable in any way.
In order to meet environmental requ irements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related t o soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
ESD protection inserted in Table 2. on page 2.
Thermal resistance junction to case information added see Table 2.
on page 2.
Macromodel insertion in Section 4 on page 8.
Added information on enhanced related families of devices on cover
page.
Removed TS274B version in AMR table and in order codes table.
13/14
Page 14
TS274
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely res ponsibl e fo r the c hoic e, se lecti on an d use o f the S T prod ucts and s ervi ces d escr ibed he rein , and ST as sumes no
liability whatsoever relati ng to the choice, selection or use o f the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third pa rty p ro duc ts or se rv ices it sh all n ot be deem ed a lice ns e gr ant by ST fo r t he use of su ch thi r d party products
or services, or any intellectua l property c ontained the rein or consi dered as a warr anty coverin g the use in any manner whats oever of suc h
third party products or servi ces or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOS E (AND THEIR EQUIVALE NTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJ URY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST fo r the ST pro duct or serv ice describe d herein and shall not cr eate or exten d in any manne r whatsoever , any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document su persedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.