Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP47/48/49/50
DESCRIPTION ·
·With TO-220C package
·High sustaining voltage
: V
CEO(sus)
= 250 - 400V
·1A rated collector current
APPLICATIONS
·High voltage and switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings
SYMBOL PARAMETER CONDITIONS VALUE UNIT
TIP47 350
V
V
V
CBO
CEO
EBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 5 V
TIP48 400
TIP49 450
TIP50
TIP47 250
TIP48 300
TIP49 350
TIP50
Open emitter
Open base
V
500
V
400
IC Collector current (DC) 1 A
ICM Collector current-Pulse 2 A
IB Base current 0.6 A
PC Collector power dissipation
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
TC=25℃ 40
Ta=25℃
2
W
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP47/48/49/50
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
TIP47 250
V
CEO(SUS)
V
CEsat
VBE Base-emitter on voltage IC=1A ; VCE=10V 1.5 V
I
CEX
I
CEO
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=1A ;IB=0.2A 1.0 V
Collector cut-off current
Collector cut-off current
TIP48 300
I
=30mA; IB=0
C
TIP49 350
TIP50
TIP47 VCE=350V; VBE=0
TIP48 VCE=400V; VBE=0
TIP49 VCE=450V; VBE=0
TIP50 VCE=500V; VBE=0
TIP47 VCE=150V; IB=0
TIP48 VCE=200V; IB=0
TIP49 VCE=250V; IB=0
TIP50 VCE=300V; IB=0
400
1 mA
1 mA
V
I
Emitter cut-off current VEB=5V; IC=0 1 mA
EBO
h
DC current gain IC=0.3A ; VCE=10V 30 150
FE-1
h
DC current gain IC=1A ; VCE=10V 10
FE-2
fT Transiton frequency IC=0.2A ; VCE=10V 10 MHz
Switching times
ton Turn-on time 0.5
t
Storage time 3.0
stg
tf Fall time
2
VCC=400V;
= -2.5IB2 = IC = 6A
5I
B1
= 66.7Ω
R
L
μs
0.3
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP47/48/49/50
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors TIP47/48/49/50
4
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