ST MICROELECTRONICS TIP 127 MBR Datasheet

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

Plastic Medium-Power Complementary Silicon Transistors

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Designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain −

h

FE

= 2500 (Typ) @ IC = 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 100 mAdc

V

CEO(sus)

= 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127

• Low Collector−Emitter Saturation Voltage −

V

= 2.0 Vdc (Max) @ IC = 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ I

= 5.0 Adc

C

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 65 WATTS

MARKING DIAGRAM

4

TO−220AB

CASE 221A

STYLE 1

STYLE 1:

1

2

3

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

TIP12x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

TIP12xG

AYWW

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

November, 2014 − Rev. 9

1 Publication Order Number:

See detailed ordering and shipping information on page 3 of

ORDERING INFORMATION

this data sheet.

TIP120/D

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

MAXIMUM RATINGS

TIP120,

Rating Symbol

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

CEO

CB

EB

I

C

TIP125

60 80 100 Vdc

− Peak

Base Current I

Total Power Dissipation @ TC = 25°C

B

P

D

Derate above 25°C

Total Power Dissipation @ TA = 25°C

P

D

Derate above 25°C

Unclamped Inductive Load Energy (Note 1) E 50 mJ

Operating and Storage Junction, Temperature Range TJ, T

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

= 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

1. I

C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 100 mAdc, IB = 0) TIP120, TIP125

TIP121, TIP126 TIP122, TIP127

Collector Cutoff Current

= 30 Vdc, IB = 0) TIP120, TIP125

(V

CE

(V

= 40 Vdc, IB = 0) TIP121, TIP126

CE

(V

= 50 Vdc, IB = 0) TIP122, TIP127

CE

Collector Cutoff Current

= 60 Vdc, IE = 0) TIP120, TIP125

(V

CB

(V

= 80 Vdc, IE = 0) TIP121, TIP126

CB

(V

= 100 Vdc, IE = 0) TIP122, TIP127

CB

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) I

ON CHARACTERISTICS (Note 2)

DC Current Gain (I

= 3.0 Adc, VCE = 3.0 Vdc)

(I

C

= 0.5 Adc, VCE = 3.0 Vdc)

C

Collector−Emitter Saturation Voltage

= 3.0 Adc, IB = 12 mAdc)

(I

C

(I

= 5.0 Adc, IB = 20 mAdc)

C

Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) V

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (I

= 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) h

C

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127

TIP120, TIP121, TIP122

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%

R

q

JC

R

q

JA

Symbol Min Max Unit

V

CEO(sus)

I

CEO

I

CBO

EBO

h

FE

V

CE(sat)

BE(on)

fe

C

ob

TIP121,

TIP126

TIP122,

TIP127

Unit

5.0 Vdc

5.0

Adc

8.0

120 mAdc

65

0.52

2.0

0.016

W

W/°C

W

W/°C

–65 to +150 °C

1.92 °C/W

62.5 °C/W

Vdc

60 80

100

−

mAdc

−

0.5

mAdc

−

0.2

− 2.0 mAdc

1000 1000

−

Vdc

−

2.0

4.0

− 2.5 Vdc

4.0 − −

−

300 200

pF

−

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2

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

BASE

COLLECTOR

≈ 8.0 k ≈ 120

BASE

≈ 8.0 k ≈ 120

EMITTER

COLLECTOR

EMITTER

Figure 1. Darlington Circuit Schematic

ORDERING INFORMATION

Device Package Shipping

TIP120 TO−220 50 Units / Rail

TIP120G TO−220

(Pb−Free)

TIP121 TO−220 50 Units / Rail

TIP121G TO−220

(Pb−Free)

TIP122 TO−220 50 Units / Rail

TIP122G TO−220

(Pb−Free)

TIP125 TO−220 50 Units / Rail

TIP125G TO−220

(Pb−Free)

TIP126 TO−220 50 Units / Rail

TIP126G TO−220

(Pb−Free)

TIP127 TO−220 50 Units / Rail

TIP127G TO−220

(Pb−Free)

50 Units / Rail

4.0

3.0

2.0

1.0

, POWER DISSIPATION (WATTS)

D

P

T

C

A

80

60

T

C

40

T

20

0

0 20 40 60 80 100 120 160

A

T, TEMPERATURE (°C)

Figure 2. Power Derating

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3

140

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

MUST BE FAST RECOVERY TYPE, eg:

D

1

1N5825 USED ABOVE I MSD6100 USED BELOW I

V

2

approx +8.0 V

0

V

1

approx

-12 V

, tf ≤ 10 ns

t

r

DUTY CYCLE = 1.0%

25 ms

≈ 100 mA

B

≈ 100 mA

B

R

B

D

1

51

+4.0 V

for td and tr, D1 is disconnected and V

= 0

2

For NPN test circuit reverse all polarities.

≈ 8.0 k

Figure 3. Switching Times Test Circuit

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.05

0.07

(NORMALIZED)

0.05

0.02

0.03

0.02

0.01

0.01 SINGLE PULSE

0.02

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

r(t), TRANSIENT THERMAL RESISTANCE

TUT

≈ 120

R

V

-30 V

C

5.0

CC

3.0

t

s

PNP NPN

2.0

SCOPE

1.0

t

f

0.7

0.5

t, TIME (s)μ

0.3

0.2

0.1

0.07

0.05

0.1

VCC = 30 V

= 250

I

C/IB

= I

I

B1

B2

TJ = 25°C

td @ V

BE(off)

0.2 0.3 0.5 0.7 1.0 2.0 3.0 10

= 0

t

r

5.0 7.0

IC, COLLECTOR CURRENT (AMP)

Figure 4. Switching Times

P

Z

= r(t) R

q

JC(t)

R

= 1.92°C/W MAX

q

JC

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

t, TIME (ms)

q

JC

1

Z

q

(pk)

JC(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

Figure 5. Thermal Response

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4

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

20

10

5.0

2.0

1.0

0.5

0.2

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.05

0.02

1.0

TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V

CEO

2.0 5.0 20 50 100

3.0 7.0 30 70

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

500 ms

dc

TIP120, TIP125 TIP121, TIP126 TIP122, TIP127

10

Figure 6. Active−Region Safe Operating Area

10,000

5000 3000

2000

1000

500 300

200

100

, SMALL-SIGNAL CURRENT GAIN

fe

h

50 30

20

10

1.0

TC = 25°C

= 4.0 Vdc

V

CE

I

= 3.0 Adc

C

PNP NPN

20 50 100 200 10002.0 5.0 10

f, FREQUENCY (kHz)

Figure 7. Small−Signal Current Gain

1ms

5ms

100 ms

500

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

− V

C

limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on T

= 150°C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T < 150°C. T

may be calculated from the data in Figure 5.

J(pk)

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown

300

TJ = 25°C

200

C

100

70

C, CAPACITANCE (pF)

50

30

0.1

C

ib

PNP NPN

2.0 5.0 10 20 100500.2 0.5 1.0

V

, REVERSE VOLTAGE (VOLTS)

R

Figure 8. Capacitance

ob

CE

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5

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

NPN TIP120, TIP121, TIP122

20,000

10,000

5000

TJ = 150°C

3000 2000

1000

, DC CURRENT GAIN

FE

h

500

300 200

0.1

3.0

2.6

0.2 0.3 0.5 1.0 2.0 10

IC = 2.0 A

25°C

-55°C

0.7 3.0

IC, COLLECTOR CURRENT (AMP)

4.0 A

6.0 A

20,000

VCE = 4.0 V

10,000

, DC CURRENT GAIN

h

5.0 7.0

Figure 9. DC Current Gain

TJ = 25°C

PNP TIP125, TIP126, TIP127

7000 5000

TJ = 150°C

FE

3000

2000

1000

700 500

300 200

3.0

2.6

0.1

25°C

-55°C

0.2 0.3 0.5 1.0 2.0 10

IC = 2.0 A

0.7 3.0

IC, COLLECTOR CURRENT (AMP)

4.0 A 6.0 A

VCE = 4.0 V

5.0 7.0

TJ = 25°C

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

V, VOLTAGE (VOLTS)

2.2

1.8

1.4

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.5 1.0 2.0 10 30

0.3

0.7 5.0

I

B

3.0 7.0

, BASE CURRENT (mA)

Figure 10. Collector Saturation Region

TJ = 25°C

V

@ IC/IB = 250

BE(sat)

VBE @ VCE = 4.0 V

V

@ IC/IB = 250

CE(sat)

0.1

0.2 0.3 0.5 1.0 2.0 5.0 10

I

0.7 7.0

, COLLECTOR CURRENT (AMP)

C

3.0

2.2

1.8

1.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

20

1.0

0.3

3.0

TJ = 25°C

2.5

2.0

1.5

VBE @ VCE = 4.0 V

V, VOLTAGE (VOLTS)

1.0

0.5

0.1 0.2 0.3 0.5 1.0 2.0 5.0 10

Figure 11. “On” Voltages

0.5 1.0 2.0 10 30

0.7 5.0 20

I

B

V

@ IC/IB = 250

BE(sat)

V

CE(sat)

I

, COLLECTOR CURRENT (AMP)

C

3.0 7.0

, BASE CURRENT (mA)

@ IC/IB = 250

3.00.7 7.0

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6

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 J 0.014 0.024 0.36 0.61 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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TIP120/D

7