–4 x 50 W/4 Ω max.
–4 x 45 W/4 Ω EIAJ
–4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 %
–4 x 80 W/2 Ω max.
–4 x 77 W/2 Ω EIAJ
–4 x 55 W/2 Ω @ 14.4 V, 1 kHz, 10 %
■ Multipower BCD technology
■ MOSFET output power stage
■ Excellent 2 Ω driving capability
■ Hi-fi class distortion
■ Low output noise
■ Standby function
■ Mute function
■ Automute at min. supply voltage detection
■ Low external component count:
– Internally fixed gain (26 dB)
– No external compensation
– No bootstrap capacitors
■ On board 0.35 A high side driver
Protections
■ Output short circuit to GND, to V
load
■ Very inductive loads
Table 1.Device summary
, across the
S
TDA7560A
Flexiwatt27 (vertical)
■ Overrating chip temperature with soft thermal
limiter
■ Output DC offset detection
■ Load dump voltage
■ Fortuitous open GND
■ Reversed battery
■ ESD
Description
The TDA7560A is a breakthrough BCD (Bipolar /
CMOS / DMOS) technology class AB audio power
amplifier in Flexiwatt 27 package designed for
high power car radio.
The fully complementary P-Channel/N-Channel
output structure allows a rail to rail output voltage
swing which, combined with high output current
and minimized saturation losses sets new power
references in the car-radio field, with unparalleled
distortion performances.
Figure 5.Output power vs. supply voltage (R
Figure 6.Output power vs. supply voltage (R
Figure 7.Distortion vs. output power (R
Figure 8.Distortion vs. output power (R
Figure 9.Distortion vs. frequency (R
Figure 10.Distortion vs. frequency (R
(Amp: Mute)
Att ≥ 80 dB; P
(Amp: Play)
Att < 0.1 dB; P
V
= 1.5 V
MUTE
(Sourced current)
= 3.5 V-518μA
V
MUTE
= 13.2 V; RL = 4 Ω; Rg = 600 Ω; f = 1 kHz;
S
42
32
50
40
45
34
55
43
4145
77
43
75
= 1 Vrms5070dB
r
= 4 W
O
= 4 W
O
Oref
= 4 W
= 0.5 W
O
60
50
6.57
50
80
0.006
0.015
35
50
70
60
7.58
0.02
0.03
50
70
-
-
71218μA
W
W
W
%
µV
dB
μA
V
V
M MAX
V
dropout
I
prot
Mute voltage for HSD operation6V
Dropout voltageIO = 0.35 A; VS = 9 to 16 V0.250.6V
Current limits400800mA
7/15
Electrical specificationsTDA7560A
Table 4.Electrical characteristics (continued)
(Refer to the test and application diagram, V
T
= 25 °C; unless otherwise specified).
amb
SymbolParameterTest conditionMin. Typ.Max.Unit
Offset detector (Pin 26)
= 13.2 V; RL = 4 Ω; Rg = 600 Ω; f = 1 kHz;
S
V
M_ON
V
M_OFF
V
V
V
Mute voltage for DC offset
detection enabled
Detected differential output offset V
OFF
Pin 26 voltage for detection =
26_T
Tr u e
Pin 26 voltage for detection =
26_F
False
V
ST-BY
ST-BY
V
ST-BY
V
OFF
V
ST-BY
V
OFF
= 5 V
= 5 V; V
= 5 V; V
> ±4 V
= 5 V; V
> ±2 V
= 8 V±2±3±4V
mute
= 8 V
mute
= 8 V
mute
1. Saturated square wave output.
2.4 Standard test and application circuit
Figure 3.Standard test and application circuit
C8
0.1μFC72200μF
Vcc1-2
Vcc3-4
ST-BY
MUTE
IN1
IN2
IN3
IN4
R1
10K
R2
47K
C1
0.1μF
C2 0.1μF
C3 0.1μF
C4 0.1μF
C9
1μF
C10
1μF
S-GND
5
23
12
13
16
15
14
1711261, 27
C5
0.47μF
721
HSD/OFF DET
SVRTAB
C6
47μF
8V
6V
01.5V
12V
10
9
8
6
3
4
18
19
20
22
25
24
OFF DET
2
D03AU1469
OUT1
OUT2
OUT3
OUT4
8/15
TDA7560AElectrical specifications
(V)
2.5 Electrical characteristics curves
Figure 4.Quiescent current vs. supply
voltage
Id (mA)
240
220
Vi = 0
RL = 4 Ohm
200
180
160
140
8 1012141618
Vs (V)
Figure 6.Output power vs. supply voltage
(R
= 2Ω)
L
Po (W)
130
120
110
100
90
80
RL= 2 Ohm
f= 1 KHz
70
60
50
40
30
20
10
89101112131415161718
Vs (V)
Po-max
THD= 10 %
THD= 1 %
Figure 5.Output power vs. supply voltage
(R
= 4Ω)
L
Po (W)
80
75
70
Po-max
65
60
RL= 4 Ohm
55
50
45
40
35
f= 1 KHz
THD= 10 %
30
25
20
THD= 1 %
15
10
5
89101112131415161718
Vs
Figure 7.Distortion vs. output power
(RL=4Ω)
THD (%)
10
Vs= 14.4 V
1
RL = 4 Ohm
0.1
0.01
0.001
0.1110
f = 10 KHz
f = 1 KHz
Po (W)
Figure 8.Distortion vs. output power
(R
=2Ω)
L
THD (%)
10
Vs= 14.4 V
RL = 2 Ohm
1
f = 10 KHz
0.1
0.01
0.001
0.1110
f = 1 KHz
Po (W)
Figure 9.Distortion vs. frequency (R
THD (%)
10
Vs = 14.4 V
1
RL = 4 Ohm
Po = 4 W
=4Ω)
L
0.1
0.01
0.001
10100100010000
f (Hz)
9/15
Electrical specificationsTDA7560A
(Hz)
g
Figure 10. Distortion vs. frequency (RL=2Ω)Figure 11. Crosstalk vs. frequency
10
1
0.1
0.01
THD (%)
Vs = 14.4 V
RL = 2 Ohm
Po = 8 W
CROSSTALK (dB)
90
80
70
60
50
RL = 4 Ohm
Po = 4 W
40
Rg = 600 Ohm
30
0.001
10100100010000
f
Figure 12. Supply voltage rejection vs.
frequency
SVR (dB)
20
10100100010000
f (Hz)
Figure 13. Output attenuation vs. supply
voltage
OUT ATTN (dB)
100
90
80
0
-20
RL = 4 Ohm
Po= 4 W ref.
70
60
50
Rg= 600 Ohm
40
Vripple= 1 Vrms
30
20
10100100010000
f (Hz)
-40
-60
-80
-100
5678910
Vs (V)
Figure 14. Output noise vs. source resistanceFigure 15. Power dissipation and efficiency vs.
output power (sine-wave operation)
En (uV)
130
120
Vs= 14.4 V
110
RL= 4 Ohm
100
90
80
70
60
22-22 KHz lin.
50
40
"A" wgtd
30
20
110100100010000100000
R
(Ohm)
Ptot (W)
90
80
Vs= 13.2 V
70
RL= 4 x 4 Ohm
60
f= 1 KHz SINE
50
40
30
20
10
0
0 2 4 6 8 1012141618202224262830
Po (W)
n
Ptot
n (%)
90
80
70
60
50
40
30
20
10
0
10/15
TDA7560AElectrical specifications
Figure 16. Power dissipation vs. output power
(music/speech simulation);
R
=4x4Ω
L
Ptot (W)
30
Vs= 13.2 V
25
RL= 4 x 4 Ohm
GAUSSIAN NOISE
CLIP START
20
15
10
5
0123456
Po (W)
Figure 18. ITU R-ARM frequency response,
weighting filter for transient pop
Output attenuation (dB)
10
0
Figure 17. Power dissipation vs. output power
(music/speech simulation);
RL=4x2Ω
Ptot (W)
60
Vs= 13.2 V
55
RL= 4 x 2 Ohm
GAUSSIAN NOISE
50
45
40
35
30
25
20
15
10
5
0246810
CLIP START
Po (W)
-10
-20
-30
-40
-50
10100100010000100000
Hz
AC00343
11/15
Application hintsTDA7560A
3 Application hints
(ref. to the circuit of Figure 3)
3.1 SVR
Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF
time sequence and, consequently, plays an essential role in the pop optimization during
ON/OFF transients.To conveniently serve both needs, ITS MINIMUM RECOMMENDED
VALUE IS 10 µF.
3.2 Input stage
The TDA7560A's inputs are ground-compatible and can stand very high input signals
(±8 Vpk) without any performances degradation.
If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off
will amount to 16 Hz.
3.3 Standby and muting
Standby and Muting facilities are both CMOS-compatible. In absence of true CMOS ports or
microprocessors, a direct connection to Vs of these two pins is admissible but a 470 kOhm
equivalent resistance should be present between the power supply and the muting and
ST-BY pins.
R-C cells have always to be used in order to smooth down the transitions for preventing any
audible transient noises.
About the standby, the time constant to be assigned in order to obtain a virtually pop-free
transition has to be slower than 2.5 V/ms.
3.4 DC offset detector
The TDA7560A integrates a DC offset detector to avoid that an anomalous DC offset on the
inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on
the outputs which may lead to speakers damage for overheating. The feature is enabled by
the MUTE pin (according to Ta bl e 4 ) and works with the amplifier unmuted and with no
signal on the inputs.
The DC offset detection can be available at 2 different pins:
–Pin 2 (always enabled)
–Pin 26. Only enabled if Vmute (pin23) is set higher than 8V. If not (Vmute < 6 V)
pin 26 will revert to the original HSD function
3.5 Heatsink definition
Under normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be
deduced from Figure 16, which reports the simulated power dissipation when real
music/speech programmes are played out. Noise with gaussian-distributed amplitude was
employed for this simulation. Based on that, frequent clipping occurrence (worst-case) will
cause P
heatsink's thermal resistance should be approximately 2 °C/W. This would avoid any
thermal shutdown occurrence even after long-term and full-volume operation
12/15
= 26 W. Assuming T
diss
= 70 °C and T
amb
= 150 °C as boundary conditions, the
CHIP
TDA7560APackage information
4 Package information
In order to meet environmental requirements, ST (also) offers these devices in ECOPACK®
packages. ECOPACK
®
packages are lead-free. The category of second Level Interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
Figure 19. Flexiwatt27 (vertical) mechanical data and package dimensions
(1): dam-bar pro tusion not inc luded
(2): molding protusion included
mminch
MIN. TYP. MAX. MIN. TYP. MAX.
OUTLINE AND
MECHANICAL DATA
Flexiwatt27 (vertical)
V
C
B
H
V3
OL3L4
L2
Pin 1
H3
G
H1
G1
H2
R3
N
F
V
A
R4
R2
R
L
L1
V2
R2
FLEX27ME
V1
R1
L5
R1R1
M1
M
V1
D
E
7139011
13/15
Revision historyTDA7560A
5 Revision history
Table 5.Document revision history
DateRevisionChanges
16-Mar-20031Initial release.
Document reformatted.
Changed the order code, see Table 1: Device summary.
29-Sep-20082
07-Nov-20083
Updated Table 4: Electrical characteristics.
Added Figure 18: ITU R-ARM frequency response, weighting filter for
transient pop.
Modified max. values of the VOS and THD parameter in Ta bl e 4 :
Electrical characteristics.
14/15
TDA7560A
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