ST MICROELECTRONICS TDA 7560 Datasheet



TDA7560

4 x 45WQUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

SUPERIOROUTPUTPOWER CAPABILITY:
4 x50W/4Ω MAX.
4 x45W/4ΩEIAJ
4 x30W/4Ω@ 14.4V,1KHz, 10%
4 x80W/2Ω MAX.
4 x77W/2Ω EIAJ
4 x55W/2Ω @ 14.4V,1KHz, 10%

EXCELLENT2ΩDRIVINGCAPABILITY
HI-FICLASS DISTORTION
LOW OUTPUT NOISE
ST-BYFUNCTION
MUTEFUNCTION
AUTOMUTEAT MIN. SUPPLYVOLTAGE DE-

TECTION
LOW EXTERNAL COMPONENTCOUNT:

– INTERNALLYFIXED GAIN(26dB)
– NOEXTERNALCOMPENSATION
– NOBOOTSTRAPCAPACITORS

ON BOARD0.35A HIGHSIDE DRIVER

PROTECTIONS:

OUTPUT SHORT CIRCUIT TO GND, TO V
ACROSS THELOAD

VERYINDUCTIVE LOADS
OVERRATING CHIP TEMPERATURE WITH

SOFT THERMAL LIMITER
OUTPUTDC OFFSETDETECTION

MULTIPOWER BCD TECHNOLOGY

MOSFETOUTPUT POWER STAGE

FLEXIWATT25

ORDERING NUMBER: TDA7560

LOADDUMP VOLTAGE
FORTUITOUSOPEN GND
REVERSEDBATTERY
ESD

DESCRIPTION

The TDA7560 is a breakthrough BCD (Bipolar /
CMOS / DMOS) technology class AB Audio
Power Amplifier in Flexiwatt 25 package designed

,

S

for high power car radio.The fully complementary
P-Channel/N-Channel output structure allows a
rail to rail output voltage swing which, combined
with high output current and minimised saturation
losses setsnew power references in the car-radio
field,with unparalleleddistortion performances.

BLOCK AND APPLICATION DIAGRAM

Vcc1 Vcc2

ST-BY

MUTE

IN1

0.1µF

IN2

0.1µF

IN3

0.1µF

IN4

0.1µF

AC-GND

0.47µF47µF

November 2001

SVR TAB S-GND

HSD/V
OUT1+
OUT1­PW-GND

OUT2+
OUT2­PW-GND

OUT3+
OUT3­PW-GND

OUT4+
OUT4­PW-GND

D94AU158C

100nF470µF

DETHSD

OFF

1/10

TDA7560

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V

CC (DC)

V

CC (pk)

I

O

P

tot

T

j

T

stg

PIN CONNECTION(Topview)

Operating Supply Voltage 18 V
DC Supply Voltage 28 V
Peak Supply Voltage (t = 50ms) 50 V
Output Peak Current:

Repetitive (Duty Cycle 10% at f = 10Hz)
Non Repetitive (t = 100µs)

Power dissipation, (T

=70°C) 80 W

case

9

10

Junction Temperature 150 °C
Storage Temperature – 55 to150

A
A

C

°

1 25

TAB

OUT2-

P-GND2

ST-BY

CC

V

OUT2+

OUT1-

P-GND1

SVR

OUT1+

IN1

IN2

IN4

S-GND

IN3

OUT3+

AC-GND

OUT3-

P-GND3

CC

V

MUTE

OUT4+

D94AU159A

OUT4-

P-GND4

HSD

THERMAL DATA

Symbol Parameter Value Unit

Thermal Resistance Junction to Case Max. 1

2/10

R

th j-case

C/W

°

TDA7560

ELECTRICALCHARACTERISTICS(VS= 13.2V;f = 1KHz; Rg= 600Ω;RL=4Ω;T

amb

=25°C;

Refer to the test and application diagram,unless otherwisespecified.)

Symbol Parameter Test Condition Min. Typ. Max. Unit

I

q1

V

OS

dV

OS

G

v

dG

P

o

P

o EIAJ

P

o max.

THD Distortion P

e

No

SVR Supply Voltage Rejection f = 100Hz; V

f

ch

R

C

T

I

SB

I

pin4

V

SB out

V

SB in

A

M

V

M out

V

Min

V

AM in

I

pin22

HSD SECTION

V

dropout

I

prot

OFFSET DETECTOR SECTION

V

M_ON

V

M_OFF

V

OFF

V

25_T

V

25_F

(*) Saturated square wave output.

Quiescent Current RL= ∞ 120 200 320 mA
Output Offset Voltage Play Mode ±60 mV
During mute ON/OFF output

offset voltage
Voltage Gain 25 26 27 dB
Channel Gain Unbalance

v

Output Power VS= 13.2V; THD = 10%

V

= 13.2V; THD = 1%

S

V

= 14.4V; THD = 10%

S

V

= 14.4V; THD = 1%

S

V

= 13.2V; THD = 10%, 2Ω

S

V

= 13.2V; THD = 1%, 2

S

V

= 14.4V; THD = 10%, 2Ω

S

V

= 14.4V; THD = 1%, 2Ω

S

EIAJ Output Power(*) VS= 13.7V; RL=4Ω

V

= 13.7V; RL=2Ω

S

Max. Output Power (*) VS= 14.4V; RL=4Ω

V

= 14.4V; RL=2

S

=4W

o

P

= 15W; RL=2

o

Ω

Ω

Output Noise ”A” Weighted

Bw = 20Hz to 20KHz

= 1Vrms 50 70 dB

r

23
16
28
20

42

Ω

32
50
40

41 45

25
19
30
23

45
34
55
43

77
50

80

0.006

0.015
35

50

High Cut-Off Frequency PO= 0.5W 100 300 KHz
Input Impedance 80 100 120 KΩ

i

Cross Talk f = 1KHz PO=4W

St-By Current Consumption V

f = 10KHz P

= 1.5V 75 µA

St-By

O

=4W

60 70

60

St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA
St-By Out ThresholdVoltage (Amp: ON) 3.5 V
St-By in Threshold Voltage (Amp: OFF) 1.5 V
Mute Attenuation P

=4W 80 90 dB

Oref

Mute Out ThresholdVoltage (Amp: Play) 3.5 V
Mute In Threshold Voltage (Amp: Mute) 1.5 V
VSAutomute Threshold (Amp: Mute)

Att≥80dB; P

Oref

=4W

6.5 7

(Amp: Play)

Muting Pin Current V

Att < 0.1dB; P

= 1.5V

MUTE

= 0.5W

O

7.5 8

71218µA

(Sourced Current)

= 3.5V -5 18 µA

V

MUTE

Dropout Voltage IO= 0.35A; VS= 9 to16V 0.25 0.6 V
Current Limits 400 800 mA

Mute Voltage for DC offset

V

=5V 8 V

stby

detection enabled
DetectedDifferentialOutputOffset V

Pin 25 Voltage for Detection =
TRUE

Pin 25 Voltage for Detection =
FALSE

V
V

V
V

stby
stby

OFF
stby

OFF

= 5V; V
= 5V; V

> ±4V

= 5V; V

> ±2V

=8V ±2 ±3 ±4V

mute
mute

mute

=8V

=8V

0 1.5 V

12 V

60 mV

±

1dB

±

0.05

0.07
50

70

–
–

6V

W
W
W
W

W
W
W
W

W
W

W
W

%
%

µ
µ

dB
dB

V
V

V
V

3/10

TDA7560

Figure 1: Standard Test andApplication Circuit

ST-BY

MUTE

IN1

IN2

IN3

IN4

R1

10K

R2

47K

C1

0.1µF

C2 0.1µF

C3 0.1µF

C4 0.1µF

C9

1µF

C10
1µF

S-GND

0.1µF

4

22

11

12

15

14

13

C5

0.47µF

C8

16 10 25 1

C7

2200µF

Vcc1-2 Vcc3-4

620

SVR TAB

C6

47µF

HSD

9
8
7

5
2
3

17
18
19

21
24
23

OUT1

OUT2

OUT3

OUT4

D95AU335B

4/10

Figure 2: P.C.B. and componentlayout of thefigure 1 (1:1scale)

COMPONENTS &
TOP COPPER LAYER

TDA7560

BOTTOM COPPER LAYER

5/10

TDA7560

Figure 3. Quiescentcurrent vs. supply

voltage.

Id(mA)

240

220

Vi= 0

RL = 4 Ohm

200

180

160

140

8 1012141618

Vs (V)

Figure 5. Outputpower vs. supplyvoltage.

Po(W)

13 0
12 0

Po-m ax

11 0
10 0

90
80

RL= 2 Ohm
f=1KHz

THD =10%

70
60
50
40

THD =1%

30
20
10

8 9 10 11 12 13 14 15 16 17 18

Vs(V)

Figure4. Output powervs. supply voltage.

Po(W)

80
75
70

Po-max

65
60

RL=4Ohm

55

f=1KHz

50

THD=10%

45
40
35
30
25
20

THD=1%

15
10

5

8 9 10 11 12 13 14 15 16 17 18

Vs(V)

Figure6. Distortion vs.output Power

TH D(%)

10

Vs=14.4 V

1

RL=4 Ohm

f=10KHz

0.1

0.01

0.001

0.1 1 10

f=1 KHz

Po(W)

Figure 7. Distortion vs. output power

TH D(%)

10

Vs=14.4 V
RL=2 Ohm

1

f=10KHz

0.1

0.0 1

0.00 1

0.1 1 10

6/10

f=1 KHz

Po (W)

Figure8. Distortion vs.frequency.

THD(%)

10

Vs= 14.4V

1

RL=4 Ohm

Po = 4 W

0.1

0.01

0.001
10 100 1000 10000

f(Hz)

TDA7560

Figure 9. Distortion vs. frequency.

TH D(%)

10

Vs=14.4V

1

RL= 2Ohm

Po= 8 W

0.1

0.01

0.001
10 100 1000 10000

f(Hz)

Figure 11. Supply voltage rejection vs. fre-

quency.

SVR(dB)

100

90
80
70
60

Figure10. Crosstalk vs. frequency.

CROSSTALK(dB)

90
80
70
60
50

RL= 4Ohm

Po=4 W

40

Rg= 600Ohm

30
20

10 100 1000 10000

f(Hz)

Figure12. Output attenuation vs. supply

voltage.

OUTA T TN(dB)

0

-20

-40

RL= 4 Ohm
Po=4 Wref.

50

Rg= 600 Ohm

40

Vripple=1Vrms

30
20

10 100 1000 100 00

f(Hz)

Figure 13. Output noise vs. source resistance.

En(uV)

130
120

Vs=14.4V

110

RL=4Ohm

100

90
80
70
60
50
40
30
20

1 10 100 1000 10000 100000

22-22KHzlin.

”A”wgtd

Rg(Ohm)

-60

-80

-100
5678910

Vs(V)

Figure14. Power dissipation& efficiencyvs.

output power (sine-waveoperation)

Ptot(W)

90
80

Vs=13.2V

70

RL=4 x4 Ohm

60

f=1 KHzSINE

50
40
30
20
10

0

024681012141618202224262830

Po(W)

n

Ptot

n(%)

90
80
70
60
50
40
30
20
10
0

7/10

TDA7560

Figure 15. Power dissipationvs. ouput power

(Music/SpeechSimulation)

Ptot(W)

30

Vs=13.2V

25

RL=4 x 4Ohm

GAUSSIANNOISE

20

15

10

5

0123456

CLIP START

Po(W)

DC OFFSET DETECTOR

The TDA7560 integrates a DC offset detector to
avoid that an anomalous DC offset on the inputs
of the amplifier may be multiplied by the gain and
result in a dangerous large offset on the outputs
which may lead to speakers damage for over­heating.

The feature is enabled by the MUTE pin and
works with the amplifier umuted and with no sig­nal on the inputs. The DC offset detection is sig­naled out on the HSDpin.

APPLICATIONHINTS (ref.to the circuit of fig. 1)
SVR
Besides its contributionto the ripple rejection, the

SVR capacitor governs the turn ON/OFF time se­quence and, consequently,playsan essentialrole
in the pop optimization during ON/OFF tran­sients.To conveniently serve both needs, ITS
MINIMUM RECOMMENDEDVALUE IS 10µF.

INPUT STAGE
The TDA7560’sinputs are ground-compatibleand

can stand very high input signals (± 8Vpk)without
any performancesdegradation.

If the standard value for the input capacitors
(0.1µF) is adopted, the low frequency cut-off will
amount to 16 Hz.

Figure16. Power dissipationvs. output power

(Music/SpeechSimulation)

Ptot(W)

60

Vs= 13.2V

55

RL=4 x 2 Ohm
GAUSSIANNOISE

50
45
40
35
30
25
20
15
10

5

0246810

CLIP START

Po(W)

STAND-BYAND MUTING
STAND-BY and MUTING facilities are both

CMOS-COMPATIBLE. If unused, a straight con­nectionto Vs of their respective pins would be ad­missible. Conventional low-power transistors can
be employed to drive muting and stand-bypins in
absence of trueCMOS ports or microprocessors.

R-C cells have always to be used in order to
smooth down the transitions for preventing any
audibletransient noises.

About the stand-by, the time constant to be as­signed in order to obtain a virtually pop-free tran­sitionhas to be slowerthan 2.5V/ms.

HEATSINKDEFINITION
Under normal usage (4 Ohm speakers) the

heatsink’s thermal requirements have to be de­duced from fig. 15, which reports the simulated
power dissipation when real music/speech pro­grammes are played out. Noise with gaussian­distributedamplitude was employed for this simu­lation. Based on that, frequent clipping occurence
(worst-case) will cause Pdiss = 26W. Assuming
Tamb = 70°C and T

= 150°C as boundary

CHIP

conditions, the heatsink’s thermal resistance
should be approximately2°C/W. This would avoid
any thermal shutdown occurence even after long­term andfull-volume operation.

8/10

TDA7560

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 4.45 4.50 4.65 0.175 0.177 0.183
B 1.80 1.90 2.00 0.070 0.074 0.079
C 1.40 0.055
D 0.75 0.90 1.05 0.029 0.035 0.041
E 0.37 0.39 0.42 0.014 0.015 0.016

F (1) 0.57 0.022

G 0.80 1.00 1.20 0.031 0.040 0.047

G1 23.75 24.00 24.25 0.935 0.945 0.955

H (2) 28.90 29.23 29.30 1.138 1.150 1.153

H1 17.00 0.669
H2 12.80 0.503
H3 0.80 0.031

L (2) 22.07 22.47 22.87 0.869 0.884 0.904

L1 18.57 18.97 19.37 0.731 0.747 0.762

L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626

L3 7.70 7.85 7.95 0.303 0.309 0.313
L4 5 0.197
L5 3.5 0.138

M 3.70 4.00 4.30 0.145 0.157 0.169

M1 3.60 4.00 4.40 0.142 0.157 0.173

N 2.20 0.086
O 2 0.079

R 1.70 0.067
R1 0.5 0.02
R2 0.3 0.12
R3 1.25 0.049
R4 0.50 0.019

V5°(Typ.)

V1 3°(Typ.)
V2 20°(Typ.)
V3 45°(Typ.)

(1): dam-bar protusion notincluded
(2): molding protusion included

OUTLINE AND

MECHANICALDATA

Flexiwatt25

L2

H

V3

OL3 L4

V

C

H3

G

H1

G1

R3

H2

F

A

R4

N

V2

R2

R

L

L1

V1

R2

B

V

FLEX25ME

R1

L5

V1

R1 R1

E

M1

M

D

9/10

TDA7560

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