STMicroelectronics STX790A, STX790AG Schematic [ru]
Medium current, high performance, low voltage PNP transistor
Features
■ Very low collector to emitter saturation voltage
■ DC current gain, h
■ 3 A continuous collector current
■ 40 V breakdown voltage V
Applications
FE
> 100
(BR)CER
STX790A
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger
TO-92
TO-92AP
applications
■ Heavy load driver
Figure 1. Internal schematic diagram
Description
The devices are manufactured in low voltage PNP
planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high
gain performance coupled with very low
saturation voltage. The STX790AG-AP is supplied
using halogen-free molding compound.
Obsolete Product(s) - Obsolete Product(s)
Table 1. Device summary
Order codes Marking Packages Packaging
STX790A X790A TO-92 Bulk
STX790A-AP X790A TO-92 AP Ammopack
STX790AG-AP X790AG TO-92 AP Ammopack
April 2009 Doc ID 9406 Rev 4 1/10
www.st.com
10
Electrical ratings STX790A
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
V
I
P
T
Collector-base voltage (IE = 0) -40 V
CBO
Collector-emitter voltage (R
CER
Collector-emitter voltage (IB = 0) -30 V
CEO
Emitter-base voltage (IC = 0) -5 V
EBO
I
Collector current -3 A
C
Collector peak current (tP < 5 ms) -6 A
CM
Total dissipation at T
tot
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
amb
BE
= 47 Ω)
-40 V
= 25 °C 0.9 W
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case _max
Thermal resistance junction-ambient __ max
44.6
139
°C/W
°C/W
Obsolete Product(s) - Obsolete Product(s)
2/10 Doc ID 9406 Rev 4
STX790A Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
= -30 V
I
CBO
I
EBO
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
(IC = 0)
V
CB
= -30 V; TC = 100 °C
V
CB
V
= -4 V
EB
-10
-100µAµA
-10 µA
V
(BR)CEO
(1)
V
(BR)CER
(1)
Collector-emitter
breakdown voltage
= 0)
(I
B
Collector-emitter
breakdown voltage
= 47 Ω)
(R
BE
= -10 mA
I
C
= -10 mA
I
C
-30 V
-40 V
Collector-base
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Obsolete Product(s) - Obsolete Product(s)
h
FE
breakdown voltage
= 0)
(I
E
Emitter-base breakdown
voltage (IC = 0)
Collector-emitter
(1)
saturation voltage
Base-emitter saturation
(1)
voltage
(1)
Base-emitter on voltage
(1)
DC current gain
= -100 µA
I
C
= -100 µA
I
E
= -0.5 A IB = -5 mA
I
C
= -1.2 A IB = -20 mA
I
C
= -2 A IB = -20 mA
I
C
= -3 A IB = -100 mA
I
C
I
= -3 A IB = -100 mA
C
= 100 °C
T
C
= -1A IB = -10mA
I
C
I
= -1A V
C
I
= -10mA V
C
= -500mA V
I
C
I
= -1A V
C
= -2A V
I
C
= -3A V
I
C
CE
CE
CE
CE
CE
CE
= -2V
= -2V
= -2V
= -2V
= -1V
= -1V
-40 V
-5 V
-0.15
-0.25
-0.5
-0.7
-0.9
-0.8 -1 V
-0.8 -1 V
100
100
200
200
400
400
100
90
160
130
100
V
V
V
V
V
Doc ID 9406 Rev 4 3/10
Electrical characteristics STX790A
Table 4. Electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
= -50 mA V
I
f
t
Transition frequency
C
f = 50 MHz
Resistive load
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall t ime
= -3 A V
I
C
= -I
I
B1
B2 =
see Figure 8
-60 mA
1. Pulse duration = 300 µs, duty cycle ≤ 1.5%
2.1 Electrical characteristics (curves)
Figure 2. DC current gain Figure 3. DC current gain
CE
CC
= -5 V
= -20 V
100 MHz
180
160
250
80
220
210
300
100
ns
ns
ns
ns
Figure 4. Collector-emitter saturation
voltage
Figure 5. Base-emitter saturation
voltage
Obsolete Product(s) - Obsolete Product(s)
4/10 Doc ID 9406 Rev 4
Loading...