ST MICROELECTRONICS STW9N150 Datasheet
very high voltage PowerMESH™ Power MOSFET
Features
Typ e V
STW9N150 1500 V < 2.5 Ω 8 A 320 W
■ 100% avalanche tested
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
■ Very low on-resistance
DSS
Application
R
DS(on)
I
D
STW9N150
N-channel 1500 V - 1.8 Ω - 8 A - TO-247
Pw
3
2
1
TO-247
■ Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the company’s proprietary
edge termination structure, gives the lowest
R
switching characteristics.
Table 1. Device summary
per area, unrivalled gate charge and
DS(on)
Order code Marking Package Packaging
STW9N150 9N150 TO-247 Tube
Figure 1. Internal schematic diagram
January 2008 Rev 2 1/12
www.st.com
12
Contents STW9N150
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW9N150 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V
V
Drain-source voltage (VGS = 0) 1500 V
DS
Gate- source voltage ± 30 V
GS
Drain current (continuous) at TC = 25 °C 8 A
I
D
I
Drain current (continuous) at TC = 100 °C 5 A
D
(1)
Drain current (pulsed) 32 A
Total dissipation at TC = 25 °C 320 W
TOT
Derating factor 2.56 W/°C
T
T
1. Pulse width limited by safe operating area
Operating junction temperature
J
Storage temperature
stg
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.39 °C/W
Rthj-amb Thermal resistance junction-ambient max 50 °C/W
T
Maximum lead temperature for soldering purpose 300 °C/W
J
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
E
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
max)
J
Single pulse avalanche energy
AS
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
J
8A
720 mJ
3/12
Electrical characteristics STW9N150
2 Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
= 1 mA, VGS = 0 1500 V
I
D
V
= Max rating
DS
= Max rating, TC=125 °C
V
DS
10
500µAµA
VGS = ± 30 V ± 100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
Static drain-source on
resistance
V
= 10 V, ID = 4 A 1.8 2.5 Ω
GS
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
(1)
g
fs
C
C
C
C
oss eq.
transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent Output
capacitance
R
Gate input resistance
g
= 15 V, ID = 4 A 7.5 S
V
DS
3255
= 25 V, f = 1 MHz, VGS = 0
V
DS
294
22.4
= 0, VDS = 0 to 1200 V 118 pF
V
GS
f=1MHz Gate DC Bias=0
Test signal level=20 mV
2.4 Ω
open drain
pF
pF
pF
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
VDD = 1200 V, ID = 8 A,
VGS = 10 V
(see Figure 15)
4/12
89.3
15.8
50.4
nC
nC
nC
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