ST MICROELECTRONICS STW70N60M2 Datasheet

N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2

D(2)

G(1)

S(3)

AM01476v1

1

2

3

TO-247

Figure 1. Internal schematic diagram

STW70N60M2

Power MOSFET in a TO-247 package

Datasheet − production data

Features

Order codes V

STW70N60M2 650 V 0.040 Ω 68 A

• Extremely low gate charge

• Excellent output capacitance (C

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

DS

@ T

JmaxRDS(on)

oss

max I

) profile

D

Description

This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.

Table 1. Device summary

Order codes Marking Package Packaging

STW70N60M2 70N60M2 TO-247 Tube

September 2014 DocID024327 Rev 4 1/13

This is information on a product in full production.

www.st.com

13

Contents STW70N60M2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 DocID024327 Rev 4

STW70N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

DM

P

dv/dt

dv/dt

T

1. Pulse width limited by safe operating area.

2. ISD ≤ 68 A, di/dt ≤ 400 A/µs; VDS

3. VDS ≤ 480 V

Gate-source voltage ± 25 V

GS

I

Drain current (continuous) at TC = 25 °C 68 A

D

I

Drain current (continuous) at TC = 100 °C 43 A

D

(1)

Drain current (pulsed) 272 A
Total dissipation at TC = 25 °C 450 W

TOT

(2)

Peak diode recovery voltage slope 15 V/ns

(3)

MOSFET dv/dt ruggedness 50 V/ns
Storage temperature

stg

T

Max. operating junction tempera ture

j

peak

< V

(BR)DSS

, VDD= 400 V.

- 55 to 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

Thermal resistance junction-case max 0.28 °C/W
Thermal resistance junction-ambient max 50 °C/W

T able 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not

I

AR

repetitive (pulse width limited by T

E

Single pulse avalanche energy (starting

AS

=25°C, ID= 10 A; VDD=50)

T

j

jmax

)

10 A

1500 mJ

DocID024327 Rev 4 3/13

Electrical characteristics STW70N60M2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

T a ble 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (V

DS

= 0)

ID = 1 mA, VGS = 0 600 V

V

= 600 V 1 µA

DS

V

= 600 V, TC=125 °C 100 µA

DS

= ± 25 V ±10 µA

V

GS

Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source

on-resistance

= 10 V, ID = 34 A 0.030 0.040 Ω

V

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

oss eq.

C

C

C

R

Input capacitance

iss

V

Output capacit a nc e - 250 - pF

oss

Reverse transfer

rss

capacitance
Equivalent output

(1)

capacitance
Intrinsic gate

G

resistance

= 100 V, f = 1 MHz,

DS

VGS = 0

= 0 to 480 V, VGS = 0 - 395 - pF

V

DS

f = 1 MHz, I

= 0 - 3.3 - Ω

D

- 5200 - pF

-5-pF

Q

Q

Q

1. C

oss eq.

increases from 0 to 80% V

Total gate charge

g

Gate-source charge - 25 - nC

gs

Gate-drain charge - 47 - nC

gd

is defined as a constant equivalent capacitance giving the same charging time as C

DSS

VDD = 480 V, ID = 68 A,
V

= 10 V

GS

(see Figure 15)

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

4/13 DocID024327 Rev 4

Turn-on delay time
Rise time - 17 - ns

t

r

Turn-off-delay time - 155 - ns

t

Fall time - 9 - ns

f

V

= 300 V, ID = 34 A,

DD

R

= 4.7 Ω, V

G

(see Figure 14 and

Figure 19)

GS

= 10 V

-118-nC

when VDS

oss

-32-ns