ST MICROELECTRONICS STW70N60M2 Datasheet

N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2

D(2)

G(1)

S(3)

AM01476v1

1

2

3

TO-247

Figure 1. Internal schematic diagram

STW70N60M2

Power MOSFET in a TO-247 package

Datasheet − production data

Features

Order codes V

STW70N60M2 650 V 0.040 Ω 68 A

• Extremely low gate charge

• Excellent output capacitance (C

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

DS

@ T

JmaxRDS(on)

oss

max I

) profile

D

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Table 1. Device summary

Order codes Marking Package Packaging

STW70N60M2 70N60M2 TO-247 Tube

September 2014 DocID024327 Rev 4 1/13

This is information on a product in full production.

www.st.com

13

Contents STW70N60M2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 DocID024327 Rev 4

STW70N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

DM

P

dv/dt

T

1. Pulse width limited by safe operating area.

2. ISD ≤ 68 A, di/dt ≤ 400 A/µs; VDS

3. VDS ≤ 480 V

Gate-source voltage ± 25 V

GS

I

Drain current (continuous) at TC = 25 °C 68 A

D

I

Drain current (continuous) at TC = 100 °C 43 A

D

(1)

Drain current (pulsed) 272 A Total dissipation at TC = 25 °C 450 W

TOT

(2)

Peak diode recovery voltage slope 15 V/ns

(3)

MOSFET dv/dt ruggedness 50 V/ns Storage temperature

stg

T

Max. operating junction tempera ture

j

peak

< V

(BR)DSS

, VDD= 400 V.

- 55 to 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

Thermal resistance junction-case max 0.28 °C/W Thermal resistance junction-ambient max 50 °C/W

T able 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not

I

AR

repetitive (pulse width limited by T

E

Single pulse avalanche energy (starting

AS

=25°C, ID= 10 A; VDD=50)

T

j

jmax

)

10 A

1500 mJ

DocID024327 Rev 4 3/13

Electrical characteristics STW70N60M2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

T a ble 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate-body leakage current (V

DS

= 0)

ID = 1 mA, VGS = 0 600 V

V

= 600 V 1 µA

DS

V

= 600 V, TC=125 °C 100 µA

DS

= ± 25 V ±10 µA

V

GS

Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V Static drain-source

on-resistance

= 10 V, ID = 34 A 0.030 0.040 Ω

V

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

oss eq.

C

R

Input capacitance

iss

V

Output capacit a nc e - 250 - pF

oss

Reverse transfer

rss

capacitance Equivalent output

(1)

capacitance Intrinsic gate

G

resistance

= 100 V, f = 1 MHz,

DS

VGS = 0

= 0 to 480 V, VGS = 0 - 395 - pF

V

DS

f = 1 MHz, I

= 0 - 3.3 - Ω

D

- 5200 - pF

-5-pF

Q

1. C

oss eq.

increases from 0 to 80% V

Total gate charge

g

Gate-source charge - 25 - nC

gs

Gate-drain charge - 47 - nC

gd

is defined as a constant equivalent capacitance giving the same charging time as C

DSS

VDD = 480 V, ID = 68 A, V

= 10 V

GS

(see Figure 15)

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

4/13 DocID024327 Rev 4

Turn-on delay time Rise time - 17 - ns

t

r

Turn-off-delay time - 155 - ns

t

Fall time - 9 - ns

f

V

= 300 V, ID = 34 A,

DD

R

= 4.7 Ω, V

G

(see Figure 14 and

Figure 19)

GS

= 10 V

-118-nC

when VDS

oss

-32-ns

STW70N60M2 E lectrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current - 68 A

SD

(1)

Source-drain current (pulsed) - 272 A

(2)

Forward on voltage ISD = 68 A, VGS = 0 - 0.98 1.6 V

t

Reverse recovery time

rr

Reverse recovery charge - 12 µC

rr

I

= 68 A, di/dt = 100 A/µs

SD

VDD = 60 V (see Figure 18)

- 520 ns

Reverse recovery current - 45 A

t

Reverse recovery time

rr

Reverse recovery charge - 18 µC

rr

Reverse recovery current - 50 A

I

= 68 A, di/dt = 100 A/µs

SD

VDD = 60 V, Tj = 150 °C (see Figure 18)

- 680 ns

DocID024327 Rev 4 5/13

Electrical characteristics STW70N60M2

I

D

10

1

0.1

1

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

100µs

10ms

1ms

0.1

Tj=150°C Tc= 2 5° C Single pulse

10µs

100

AM17966v1

10

-4

10

-3

10

-2

10

-1

t

p

(s)

10

-2

10

-1

K

0.2

0.05

0.02

0.01

0.1

Single pulse

δ=0.5

Zth=k Rthj-c

d=tp/t

tp

t

AM09125v1

I

D

150

90

30

0

4

V

DS

(V)

8

(A)

12

3V

VGS=7, 8, 9, 10V

60

120

4V

6V

5V

16

AM17967v1

V

GS

6

4

2

0

40

Q

g

(nC)

(V)

120

8

60

80

10

VDD=480V

I

D

=68A

300

200

100

0

400

500

V

DS

20

100

V

DS

(V)

AM17969v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

I

(A)

150

120

D

AM17968v1

VDS=17V

90

60

30

0

4

2

0

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

R

DS(on)

Ω)

(

VGS=10V

6

0.0315

0.031

0.0305

0.03

0.0295

6/13 DocID024327 Rev 4

0.029 20

0

10

30

40

50

8

V

GS

(V)

AM17970v1

D

(A)

I

60

STW70N60M2 E lectrical characteristics

C

1000

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

10000

AM17971v1

V

GS(th)

0.9

0.8

0.7

0.6

-50

0

T

J

(°C)

(norm)

1

50

100

I

D

=250µA

1.1

AM17973v1

V

DS

-50

0

T

J

(°C)

(norm)

50

100

0.89

0.93

0.97

1.01

1.05

1.09

ID=1mA

AM15975v1

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

Figure 10. Normalized gate threshold voltage vs

temperature

E

oss

AM17972v1

(µJ)

30

20

10

0

100

200

300

400

500

V

Figure 11. Normalized on-resistance vs

temperature

R

DS(on)

(norm)

2.2

ID=34A

1.8

AM17974v1

DS

(V)

Figure 12. Normalized VDS vs temperature Figure 13. Source-drain diode forward

1.4

1

0.6

0.2

-50

0

50

100

T

J

(°C)

characteristics

60

AM17976v1

I

SD

(A)

(V)

V

SD

1

0.9

TJ=-50°C

TJ=25°C

0.8

0.7

TJ=150°C

0.6

0.5 0

10

20

30

40

50

DocID024327 Rev 4 7/13

Test circuits STW70N60M2

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3 μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200 μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

B

R

G

FAST DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

$0Y

9%5'66

9''

9'

,'0

,'

3 Test circuits

Figure 14. Switching times test circuit for

resistive load

Figure 16. Test circuit for inductive load

switching and diode recovery times

Figure 15. Gate charge test circuit

Figure 17. Unclamped inductive load test circuit

L

VD

2200

μF

3.3

μF

VDD

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

8/13 DocID024327 Rev 4

ID

Vi

D.U.T.

Pw

AM01471v1

tdon

ton

tr

90%

tdoff

toff

tf

90%

10%

0

10%

VDS

90%

V

GS

10%

0

AM01473v1

STW70N60M2 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

DocID024327 Rev 4 9/13

Package mechanical data STW70N60M2

0075325_G

Figure 20. TO-247 drawing

10/13 DocID024327 Rev 4

STW70N60M2 Package mechanical data

Table 9. TO-247 mechanical data

mm.

Dim.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40

c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 5.45 5.60 L 14.20 14.80

L1 3.70 4.30 L2 18.50

∅P 3.55 3.65 ∅R 4.50 5.50

S 5.30 5.50 5.70

DocID024327 Rev 4 11/13

Revision history STW70N60M2

5 Revision history

Date Revision Changes

28-Feb-2013 1 First release.

13-Mar-2013 2

12-Dec-2013 3

01-Sep-2014 4

Table 10. Document revision history

– Minor text changes – Modified: test condition in Table 7

– Modified: title – Modified: Table 4, R

values in Table 6, 7 and 8 – Updated: Section 3: Test circuits – Added: Section 2.1: Electrical characteristics (curves) – Minor text changes

– Updated values inTable 4 – Updated description and features in cover page – Minor text changes

DS(on)

typical value in Table 5, the entire typical

12/13 DocID024327 Rev 4

STW70N60M2

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Information in this document supers edes and replaces information previously supplied in any prior versions of this document.

DocID024327 Rev 4 13/13

ST MICROELECTRONICS STW70N60M2 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Internal schematic diagram

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

T able 4. Avalanche characteristics

2 Electrical characteristics

T a ble 5. On /off states

Table 6. Dynamic

Table 7. Switching times

Table 8. Source drain diode

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

Figure 12. Normalized VDS vs temperature Figure 13. Source-drain diode forward

3 Test circuits

Figure 15. Gate charge test circuit

Figure 17. Unclamped inductive load test circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

4 Package mechanical data

Figure 20. TO-247 drawing

Table 9. TO-247 mechanical data

5 Revision history

Table 10. Document revision history