STMicroelectronics STP4N150, STW4N150 Technical data
N-channel 1500V - 5Ω - 4A - TO-220/TO-247
General features
V
Type
STP4N150 1500 V < 7 Ω 4A
STW4N150 1500 V < 7 Ω 4A
■ Avalanche ruggedness
■ Gate charge minimized
■ Very low intrinsic capacitances
■ High speed switching
DSS
(@Tjmax)
Description
R
DS(on)
STP4N150
STW4N150
Very high PowerMESH™ Power MOSFET
I
D
3
2
1
TO-220
TO-247
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STP4N150 P4N150 TO-220 Tube
STW4N150 W4N150 TO-247 Tube
Internal schematic diagram
August 2006 Rev 4 1/14
www.st.com
14
Contents STP4N150 - STW4N150
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STP4N150 - STW4N150 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
Drain-source voltage (VGS = 0)
DS
Drain-gate voltage (RGS = 20 kΩ)
Gate- source voltage ± 30 V
GS
Drain current (continuous) at TC = 25°C
D
Drain current (continuous) at TC = 100°C
D
(1)
Drain current (pulsed) 12 A
Total dissipation at TC = 25°C
1500 V
1500 V
4A
2.5 A
160 W
Derating factor 1 W/°C
V
I
DM
P
V
DGR
V
I
I
TOT
T
T
1. Pulse width limited by safe operating area
Operating junction temperature
j
Storage temperature
stg
-55 to 150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
TO-220 TO-247
Rthj-case Thermal resistance junction-case max 0.78 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
E
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
max)
j
Single pulse avalanche energy
AS
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
4A
350 mJ
3/14
Electrical characteristics STP4N150 - STW4N150
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
= 1 mA, VGS = 0
I
D
= Max Rating
V
DS
= Max Rating, TC = 125°C
V
DS
VGS = ± 30 V
= VGS, ID = 250 µA
V
DS
VGS = 10 V, ID = 2 A
1500 V
10
500µAµA
± 100 µA
345V
57Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
= 30 V , ID = 2 A
V
DS
= 25 V, f = 1 MHz,
V
DS
= 0
V
GS
3.5 S
1300
120
12
pF
pF
pF
T
d(on)
t
d(off)
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Turn-on delay time
T
Rise time
r
Turn-off delay time
Fall time
t
f
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
V
R
(see Figure 18)
V
V
(see Figure 19)
4/14
= 750 V, ID = 2 A,
DD
= 4.7 Ω, V
G
= 600 V, ID = 4 A,
DD
= 10 V
GS
GS
= 10 V
35
30
45
45
30
10
9
ns
ns
ns
ns
50 nC
nC
nC
STP4N150 - STW4N150 Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
= 4 A, VGS = 0
I
SD
= 4 A, di/dt = 100
I
SD
A/µs
= 45V
V
DD
(see Figure 18)
= 4 A, di/dt = 100
I
SD
A/µs
= 45V, Tj = 150°C
V
DD
(see Figure 18)
510
3
12
615
4
12.6
4
A
12
A
2V
ns
µC
A
ns
µC
A
5/14
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