ST MICROELECTRONICS STW42N65M5 Datasheet

N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET

3

Features

Type

STB42N65M5
STF42N65M5

STI42N65M5

STP42N65M5

STW42N65M5

V

DSS

T

Jmax

710 V
710 V
710 V
710 V
710 V

@

STx42N65M5

2

in I

PAK, TO-220, TO-220FP, D2PAK and TO-247

R

DS(on)

max

< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω
< 0.079 Ω

I

33 A

33 A

33 A
33 A
33 A

D

3

1

D²PAK

(1)

TO-220FP

2

1

TO-220

3

2

1

1. Limited only by maximum temperature allowed

■ TO-220 worldwide best R

■

Higher V

■ High dv/dt capability

■ Excellent switching performance

■ Easy to drive

■ 100% avalanche tested

DSS

rating

DS(on)

Application

■ Switching applications

Description

MDmesh™ V is a revolutionary Power MOSFET
technology based on an innovative proprietary
vertical process, which is combined with
STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
has extremely low on-resistance, which is
unmatched among silicon-based Power
MOSFETs, making it especially suitable for
applications which require superior power density
and outstanding efficiencies.

Table 1. Device summary

3

2

I²PAK

1

TO-247

1

Figure 1. Internal schematic diagram

$

'

3

3

2

!-V

Order codes Marking Package Packaging

STB42N65M5
STF42N65M5

STI42N65M5

STP42N65M5

STW42N65M5

42N65M5
42N65M5
42N65M5
42N65M5
42N65M5

D²PAK

TO-220FP

I²PAK
TO-220
TO-247

Tape and reel

Tu b e
Tu b e
Tu b e
Tu b e

June 2009 Doc ID 15317 Rev 3 1/18

www.st.com

18

Contents STx42N65M5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 Doc ID 15317 Rev 3

STx42N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

V

I

DM

P

I

E

dv/dt

Gate- source voltage ± 25 V

GS

Drain current (continuous) at TC = 25 °C 33 33

I

D

Drain current (continuous) at TC = 100 °C 20.8 20.8

I

D

(2)

Drain current (pulsed) 132 132

Total dissipation at TC = 25 °C 190 40 W

TOT

Max current during repetitive or single pulse

AR

avalanche (pulse width limited by T

Single pulse avalanche energy

AS

(starting T

(3)

Peak diode recovery voltage slope 15 V/ns

= 25°C, ID = IAR, VDD = 50V)

j

Insulation withstand voltage (RMS) from all

V

T

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 33 A, di/dt ≤ 400 A/µs, V

three leads to external heat sink

ISO

(t = 1 s; T

Storage temperature -55 to 150 °C

stg

Max. operating junction temperature 150 °C

T

j

C = 25 °C)

Peak

< V

(BR)DSS

JMAX

(1)

(1)

Unit

A

A

A

TO-220, TO-247

D²PAK, I²PAK

)

TO-220FP

(1)

11 A

950 mJ

-- 2500 V

Table 3. Thermal data

Value

Symbol Parameter

Unit

D²PAK I²PAK TO-220 TO-247 TO-220FP

R

thj-case

R

thj-amb

R

thj-pcb

Thermal resistance junction­case max

Thermal resistance junction­ambient max

Thermal resistance junction-pcb
max

Maximum lead temperature for

T

l

soldering purpose

0.66 3.1 °C/W

-- 62.5 50 62.5 °C/W

30 -- -- -- -- °C/W

300 °C

Doc ID 15317 Rev 3 3/18

Electrical characteristics STx42N65M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on

Drain-source
breakdown voltage

Zero gate voltage
drain current (V

GS

Gate-body leakage
current (V

DS

= 0)

= 0)

= 1 mA, VGS = 0 650 V

I

D

V

= Max rating

DS

= Max rating, TC=125 °C

V

DS

1

100µAµA

VGS = ± 25 V 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source on
resistance

V

= 10 V, ID = 16.5 A 0.070 0.079 Ω

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

1. C

2. C

C

C

C

o(er)

o(tr)

R

Q
Q
Q

o(er)

to 80% V

o(tr)

to 80% V

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent output

(1)

capacitance energy
related

Equivalent output

(2)

capacitance time
related

Intrinsic gate

G

resistance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

is a constant capacitance value that gives the same stored energy as C

DSS

is a constant capacitance value that gives the same charging time as C

DSS

= 100 V, f = 1 MHz,

V

DS

= 0

V

GS

= 0, VDS = 0 to 80%

V

GS

V

(BR)DSS

= 0, VDS = 0 to 80%

V

GS

V

(BR)DSS

f = 1 MHz open drain - 1.1 - Ω

VDD = 520 V, ID = 16.5 A,

= 10 V

V

GS

(see Figure 20)

oss

oss

4650

-

110

-

3.2

-100-pF

-285-pF

100

-

26

-

38

while VDS is rising from 0

while VDS is rising from 0

pF
pF
pF

nC
nC
nC

4/18 Doc ID 15317 Rev 3

STx42N65M5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off-delay time

t

Fall time

f

= 400 V, ID = 20 A,

V

DD

= 4.7 Ω, V

R

G

(see Figure 19)

GS

= 10 V

61
24

­65

-

13

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 33 A, VGS = 0 - 1.5 V

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 33 A, di/dt = 100 A/µs

= 100 V (see Figure 24)

V

DD

= 33 A, di/dt = 100 A/µs

I

SD

= 100 V, Tj = 150 °C

V

DD

(see Figure 24)

-

-

-

33

132AA

400

7

35

532

10
38

ns
ns
ns
ns

ns

µC

A

ns

µC

A

Doc ID 15317 Rev 3 5/18

Electrical characteristics STx42N65M5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220,

I

D²PAK, I²PAK

D

AM01565v1

Figure 3. Thermal impedance for TO-220,

D²PAK, I²PAK

(A)

100

10

DS(on)

10µs

100µs

Operation in this area is

1

Limited by max R

1ms

10ms

0.1

0.1

Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247

I

D

1

10

100

V

DS

(V)

AM03246v1

(A)

100

10µs

100µs

1ms

10ms

10

1

Operation in this area is

Limited by max R

DS(on)

0.1

0.1

Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP

I

D

1

10

100

V

DS

(V)

AM01566v1

(A)

100

10

Operation in this area is

Limited by max R

1

DS(on)

10µs

100µs

1ms

10ms

0.1

0.01

0.1

1

10

100

DS

(V)

V

6/18 Doc ID 15317 Rev 3

STx42N65M5 Electrical characteristics

Figure 8. Output characteristics Figure 9. Transfer characteristics

ID

(A)

80

VGS=10V

70

60

AM01589v1

8V

7.5V

ID

(A)

80

70

60

AM01590v1

VDS=20V

50

7V

40

30

GS

V

DS(V)

Q

6.5V

6V

AM01569v1

VDS

(V)
500

400

300

200

100

0

g(nC)

20

10

0

0

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance

VGS

(V)

10

VDS

5

10

15

V

8

VDD=520V

6

V

GS=10V
D=16.5A

I

4

2

0

0

20

40

60

80

100

120

50

40

30

20

10

0

RDS(on)

(Ω)

0.076

0.074

0.072

0.070

0.068

0.066

0.064

3

4

5

7

6

8

9

GS(V)

V

AM01568v1

VGS=10V

0

10

20

30

D(A)

I

Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

C

(pF)

10000

1000

AM01570v1

Ciss

Eoss

(µJ)

16

14

12

10

100

Coss

8

6

10

Crss

1

1

10

100

V

DS(V)

4

2

0

0

100

200

300

400

500

Doc ID 15317 Rev 3 7/18

600

AM03231v1

DS(V)

V

Electrical characteristics STx42N65M5

Figure 14. Normalized gate threshold voltage

VGS(th)
(norm)

vs temperature

1.1

1.0

0.9

0.8

0.7

0.6

-50

AM01571v1

D = 250 µA

I

T

0

50

100

J(°C)

Figure 16. Source-drain diode forward

characteristics

V

SD

(V)

1.0

0.9

0.8

T

J

=-25°C

AM01574v1

Figure 15. Normalized on resistance vs

temperature

R

DS(on)

(norm)

2.0

1.5

1.0

0.5

0

-50

Figure 17. Normalized B

BV

DSS

(norm)

1.05

0

ID = 16.5 A

GS

= 10 V

V

50

VDSS

100

vs temperature

AM01573v1

T

J

(°C)

AM01572v1

0.7

0.6

0.5
TJ=150°C

J

T

=25°C

0.4

0.3

0.2
0

5

Figure 18. Switching losses vs gate resistance

(1)

10

15

20

25

30

E

(µJ)

600

500

ID=20A

DD=400V

V

L=50µH

Eon

400

300

200

100

Eoff

I

SD

(A)

AM01575v1

1.00

0.95

0.90

-50

ID = 1 mA

T

J

0

50

100

(°C)

0

10

5

0

15

20

25

30

35

40 45

R

G(Ω)

1. Eon including reverse recovery of a SiC diode

8/18 Doc ID 15317 Rev 3

STx42N65M5 Test circuits

3 Test circuits

Figure 19. Switching times test circuit for

PW

resistive load

VGS

VD

RG

RL

D.U.T.

2200

µF

3.3
µF

AM01468v1

V

DD

Figure 21. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST
DIODE

G

A

A

L=100µH

B

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 20. Gate charge test circuit

V

i=20V=VGMAX

PW

2200
µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 22. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

0

0

10%

tdon

ton

90%

tr

10%

V

GS

Doc ID 15317 Rev 3 9/18

VDS

tdoff

90%

AM01471v1

toff

tf

90%

10%

AM01473v1

Package mechanical data STx42N65M5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

10/18 Doc ID 15317 Rev 3

STx42N65M5 Package mechanical data

TO-220 mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.48 0.70 0.019 0.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P 3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

Doc ID 15317 Rev 3 11/18

Package mechanical data STx42N65M5

TO-247 mechanical data

Dim.

Min. Typ. Max.

mm.

A4.855.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c0.40 0.80

D19.85 20.15

E 15.45 15.75

e5.45

L 14.20 14.80

L1 3.70 4.30

L2 18.50

øP 3 .55 3.65

øR 4.50 5.50

S 5.50

12/18 Doc ID 15317 Rev 3

STx42N65M5 Package mechanical data

TO-220FP mechanical data

mm

Dim.

.xaM.pyT.niM

6.44.4A

7.25.2B

57.25.2D

7.054.0E

157.0F

07.151.11F

5.151.12F

2.559.4G

7.24.21G

4.0101H

612L

6.036.823L

6.018.94L

6.39.25L

4.619.516L

3.997L

2.33aiD

L7

E

A

B

L5

D

F1

F2

Dia

L6

F

H

G

G1

L2

L4

L3

7012510_Rev_J

Doc ID 15317 Rev 3 13/18

Package mechanical data STx42N65M5

Dim

I²PAK (TO-262) mechanical data

mm inch

Min Typ Max Min Typ Max

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c 0.49 0.70 0.019 0.027

c2 1.23 1.320.048 0.052

D 8.95 9.350.352 0.368
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

E 10 10.40 0.393 0.410

L13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055

14/18 Doc ID 15317 Rev 3

STx42N65M5 Package mechanical data

D²PAK (TO-263) mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181

A1 0.03 0.23 0.001 0.009

b 0.70 0.93 0.027 0.037

b2 1.14 1.70 0.045 0.067

c 0.45 0.60 0.017 0.024

c2 1.23 1.360.048 0.053

D 8.95 9.350.352 0.368

D1 7.50 0.295

E 10 10.40 0.3940.409

E1 8.50 0.334

e 2.54 0.1

e1 4.88 5.28 0.1920.208

H15 15.850.5900.624

J1 2.49 2.69 0.099 0.106

L2.29 2.79 0.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069

R 0.4 0.016

V2 0° 8°0° 8°

0079457_M

Doc ID 15317 Rev 3 15/18

Packaging mechanical data STx42N65M5

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

TAPE MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E1.651.85 0.065 0.073

F 11.4 11. 6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T0.250.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

1000 1000

16/18 Doc ID 15317 Rev 3

STx42N65M5 Revision history

6 Revision history

Table 8. Document revision history

Date Revision Changes

16-Jan-2009 1 First release

15-May-2009 2 Updated figures 9, 10, 11 and 17

12-Jun-2009 3 Figure 15 has been updated

Doc ID 15317 Rev 3 17/18

STx42N65M5

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18/18 Doc ID 15317 Rev 3