ST MICROELECTRONICS STW34N65M5 Datasheet

STB34N65M5, STI34N65M5,

1

3

2

TAB

1

2

3

TAB

1

2

3

D2PAK

I2PAK

TO-220

TO-247

!-V

$

'

3

STP34N65M5, STW34N65M5

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs

in D

2

PAK, I2PAK, TO-220 and TO-247 packages

Datasheet - production data

TAB

3

2

1

Figure 1. Internal schematic diagram

Features

Order codes V

STB34N65M5

STI34N65M5

STP34N65M5

STW34N65M5

• Worldwide best R

• Higher V

DSS

• Excellent switching performance

• 100% avalanche tested

DS

@ T

Jmax

R

DS(on)

max I

710 V 0.11 Ω 28 A

* area

DS(on)

rating and high dv/dt capability

D

Applications

• Switching applications

Description

These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on­resistance, which is unmatched among silicon­based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.

Table 1. Device summary

Order codes Marking Packages Packaging

2

STB34N65M5

STI34N65M5 I

34N65M5

STW34N65M5 TO-247

October 2013 DocID022853 Rev 3 1/22

This is information on a product in full production.

PAK Tape and reel

D

2

PAK

TubeSTP34N65M5 TO-220

www.st.com

Contents STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

DM

P

dv/dt

dv/dt

T

1. ISD ≤ 28 A, di/dt ≤ 400 A/µs; VDS

2. VDS ≤ 480 V

Gate-source voltage ± 25 V

GS

I

Drain current (continuous) at TC = 25 °C 28 A

D

I

Drain current (continuous) at TC = 100 °C 17.7 A

D

(1)

Drain current (pulsed) 112 A

Total dissipation at TC = 25 °C 190 W

TOT

(1)

Peak diode recovery voltage slope 15 V/ns

(2)

MOSFET dv/dt ruggedness 50 V/ns

Storage temperature - 55 to 150 °C

stg

T

Max. operating junction temperature 150 °C

j

peak

< V

(BR)DSS

, VDD=400 V.

Table 3. Thermal data

Value

Symbol Parameter

2

D

PA K

TO-220,

2

PA K

I

TO-247

Unit

R

thj-case

R

thj-pcb

R

thj-amb

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-case max 0.66 °C/W

Thermal resistance junction-pcb max

(1)

30 °C/W

Thermal resistance junction-ambient max 62.5 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not repetitive

I

AR

(pulse width limited by T

E

Single pulse avalanche energy (starting tj=25°C,

AS

= IAR; Vdd=50)

I

d

jmax

)

7A

510 mJ

DocID022853 Rev 3 3/22

22

Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (VDS = 0)

ID = 1 mA, VGS = 0 650 V

V

= 650 V

DS

V

= 650 V, TC=125 °C

DS

1

100µAµA

VGS = ± 25 V ± 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source
on-resistance

V

= 10 V, ID = 14 A 0.09 0.11 Ω

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

C

C

o(tr)

Input capacitance

iss

V

Output capacitance - 75 - pF

oss

Reverse transfer

rss

capacitance

Equivalent

(1)

capacitance time

= 100 V, f = 1 MHz,

DS

V

= 0

GS

related

= 0 to 520 V, VGS = 0

V

Equivalent

(2)

C

o(er)

capacitance energy

DS

related

G

Intrinsic gate
resistance

f = 1 MHz open drain - 1.95 - Ω

R

- 2700 - pF

-6.3-pF

-220-pF

-63-pF

Q

Q

Q

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
V

DS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
when V

Total gate charge

g

Gate-source charge - 17 - nC

gs

Gate-drain charge - 28 - nC

gd

increases from 0 to 80% V

increases from 0 to 80% V

DS

VDD = 520 V, ID = 14 A,
V

= 10 V

GS

(see Figure 18)

DSS

DSS

4/22 DocID022853 Rev 3

- 62.5 - nC

when

oss

oss

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

(v) Voltage delay time

t

d

(v) Voltage rise time - 8.7 - ns

t

r

t

(i) Current fall time - 7.5 - ns

f

tc(off) Crossing time - 12 - ns

= 400 V, ID = 18 A,

V

DD

RG = 4.7 Ω, V

GS

= 10 V

(see Figure 19 and

Figure 22)

-59-ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current - 28 A

SD

(1)

Source-drain current (pulsed) - 112 A

(2)

Forward on voltage ISD = 28 A, VGS = 0 - 1.5 V

t

Reverse recovery time

rr

Reverse recovery charge - 5.6 µC

rr

I

SD

VDD = 100 V (see Figure 22)

Reverse recovery current - 32 A

t

Reverse recovery time

rr

Reverse recovery charge - 7.4 µC

rr

Reverse recovery current - 35 A

I

SD

VDD = 100 V, Tj = 150 °C
(see Figure 22)

= 28 A, di/dt = 100 A/µs

= 28 A, di/dt = 100 A/µs

- 350 ns

- 422 ns

DocID022853 Rev 3 5/22

22

Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

I

D

100

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs
100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM15311v1

I

D

100

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM15318v1

I

D

60

40

20

0

0

10

V

DS

(V)

20

(A)

5

15

80

VGS= 6 V

VGS= 7 V

VGS= 8 V

25

VGS= 9 V

10

30

50

70

AM15319v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK, I2PAK

Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247

Figure 3. Thermal impedance for D2PAK, I2PAK

and TO-220

and TO-220

6/22 DocID022853 Rev 3

Figure 6. Output characteristics Figure 7. Transfer characteristics

I

(A)

80

70

60

50

30

20

10

D

AM15320v1

VDS= 25 V

0

3

5

4

7

6

8409

V

GS

(V)

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics

V

GS

6

4

2

0

0

20

Q

g

(nC)

(V)

50

8

30

40

10

VDD=520 V

I

D

=14 A

60

300

200

100

0

400

500

V

DS

(V)

V

DS

12

70

80

AM15321v1

C

1000

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

1000

AM15323v1

V

GS(th)

1.00

0.90

0.80

0.70

-50

0

T

J

(°C)

(norm)

-25

1.10

75

25

50

100

ID = 250 µA

V

DS

= V

GS

AM05459v1

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

R

DS(on)

0.096

0.096

0.094

0.092

0.09

0.088

0.086

0.084

0.082

(Ω)

0.08
0

VGS=10V

5

10

15

20

25

AM15322v1

I

D

(A)

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy

Figure 12. Normalized gate threshold voltage vs

temperature

E

oss

AM15324v1

(µJ)

12

10

8

6

4

2

0

0

100

200

300

400

500

600

V

DS

Figure 13. Normalized on-resistance vs

temperature

R

DS(on)

(norm)

2.1

1.9

1.7

1.5

1.3

1.1

V

GS

= 10 V

ID = 14 A

AM05460v1

(V)

0.9

0.7

DocID022853 Rev 3 7/22

0.5

-50

-25

25

0

50

75

100

T

J

(°C)

22

Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

V

SD

0

20

I

SD

(A)

(V)

10

50

30

40

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ=-50°C

TJ=150°C

TJ=25°C

AM05461v1

E

0

0

20

R

G(Ω)

(μJ)

10

30

100

200

40

I

D=18 A

V

DD=400 V

Eon

Eoff

300

V

GS=10 V

400

500

AM15325v1

Figure 14. Source-drain diode forward

Figure 16. Switching losses vs gate resistance

characteristics

(1)

Figure 15. Normalized V

V

DS

(norm)

1.08

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

-50

-25

D

= 1mA

I

25

0

vs temperature

DS

75

50

100

T

J

(°C)

AM10399v1

1. Eon including reverse recovery of a SiC diode

8/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Test circuits

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3
μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200
μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

A

B

B

R

G

G

FAST
DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01472v1

V(BR)DSS

VDD

VDD

VD

IDM

ID

3 Test circuits

Figure 17. Switching times test circuit for

resistive load

Figure 19. Test circuit for inductive load

switching and diode recovery times

Figure 18. Gate charge test circuit

Figure 20. Unclamped inductive load test circuit

L

VD

2200

μF

3.3

μF

VDD

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

ID

Vi

D.U.T.

Pw

AM01471v1

-off

90%Id

10%Id

AM05540v1

f

(i)

t

Inductive Load Turn

Id

90%Vds

t

d

(v)

Vgs

90%Vgs

on

on

))

Vgs(I(t))

10%Vds

Vds

r

(v)

t

t

c

(off)

DocID022853 Rev 3 9/22

22

Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

10/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data

Table 9. D²PAK (TO-263) mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

A1 0.03 0.23

b0.70 0.93

b2 1.14 1.70

c0.45 0.60

c2 1.23 1.36

D8.95 9.35

D1 7.50

E 10 10.40

E1 8.50

e2.54

e1 4.88 5.28

H 15 15.85

J1 2.49 2.69

L2.29 2.79

L1 1.27 1.40

L2 1.30 1.75

R0.4

V2 0° 8°

DocID022853 Rev 3 11/22

22

Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

0079457_T

16.90

12.20

9.75

3.50

5.08

1.60

Footprint

Figure 23. D²PAK (TO-263) drawing

a. All dimension are in millimeters

Figure 24. D²PAK footprint

(a)

12/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data

Table 10. I²PAK (TO-262) mechanical data

mm.

DIM.

min. typ max.

A 4.40 4.60

A1 2.40 2.72

b 0.61 0.88

b1 1.14 1.70

c 0.49 0.70

c2 1.23 1.32

D 8.95 9.35

e 2.40 2.70

e1 4.95 5.15

E10 10.40

L13 14

L1 3.50 3.93

L2 1.27 1.40

DocID022853 Rev 3 13/22

22

Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

0004982_Rev_H

Figure 25. I²PAK (TO-262) drawing

14/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data

Table 11. TO-220 type A mechanical data

mm

Dim.

Min. Typ. Max.

A4.40 4.60

b0.61 0.88

b1 1.14 1.70

c0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅

P3.75 3.85

Q2.65 2.95

DocID022853 Rev 3 15/22

22

Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

?TYPE!?2EV?4

Figure 26. TO-220 type A drawing

16/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Package mechanical data

Table 12. TO-247 mechanical data

mm.

Dim.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

DocID022853 Rev 3 17/22

22

Package mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

0075325_G

Figure 27. TO-247 drawing

18/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Packaging mechanical data

5 Packaging mechanical data

Table 13. D²PAK (TO-263) tape and reel mechanical data

Tap e Re el

mm

Dim.

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base qty 1000

P2 1.9 2.1 Bulk qty 1000

R50

T 0.25 0.35

W 23.7 24.3

Dim.

mm

DocID022853 Rev 3 19/22

22

Packaging mechanical data STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

P1

A0

D1

P0

F

W

E

D

B0

K0

T

User direction of feed

P2

10 pitches cumulative
tolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

B1

For machine ref. only
including draft and
radii concentric around B0

AM08852v1

Top cover
tape

A

D

B

Full radius

G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At slot location

T

Tape slot
in core for
tape start 25 mm min.
width

AM08851v2

Figure 28. Tape

20/22 DocID022853 Rev 3

Figure 29. Reel

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Revision history

6 Revision history

Table 14. Document revision history

Date Revision Changes

23-Feb-2012 1 First release.

– Added package, mechanical data: I²PAKFP
– Updated Table 1: Device summary, Table 2: Absolute maximum

15-Oct-2012 2

ratings, Table 3: Thermal data.

– Minor text changes.
–Curves inserted

– The part numbers STF34N65M5 and STFI34N65M5 have been

moved to the separate datasheet

– Modified: Figure 1

02-Oct-2013 3

– Added: MOSFET dv/dt ruggedness parameter in Ta bl e 2
– Updated: Section 4: Package mechanical data and Section 5:

Packaging mechanical data

– Minor text changes

DocID022853 Rev 3 21/22

22

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

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22/22 DocID022853 Rev 3