ST MICROELECTRONICS STW34N65M5 Datasheet

STB34N65M5, STI34N65M5,

1

3

2

TAB

1

2

3

TAB

1

2

3

D2PAK

I2PAK

TO-220

TO-247

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STP34N65M5, STW34N65M5

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs

in D

2

PAK, I2PAK, TO-220 and TO-247 packages

Datasheet - production data

TAB

3

2

1

Figure 1. Internal schematic diagram

Features

Order codes V

STB34N65M5

STI34N65M5

STP34N65M5

STW34N65M5

• Worldwide best R

• Higher V

DSS

• Excellent switching performance

• 100% avalanche tested

DS

@ T

Jmax

R

DS(on)

max I

710 V 0.11 Ω 28 A

* area

DS(on)

rating and high dv/dt capability

D

Applications

• Switching applications

Description

These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on­resistance, which is unmatched among silicon­based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.

Table 1. Device summary

Order codes Marking Packages Packaging

2

STB34N65M5

STI34N65M5 I

34N65M5

STW34N65M5 TO-247

October 2013 DocID022853 Rev 3 1/22

This is information on a product in full production.

PAK Tape and reel

D

2

PAK

TubeSTP34N65M5 TO-220

www.st.com

Contents STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

2/22 DocID022853 Rev 3

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

DM

P

dv/dt

dv/dt

T

1. ISD ≤ 28 A, di/dt ≤ 400 A/µs; VDS

2. VDS ≤ 480 V

Gate-source voltage ± 25 V

GS

I

Drain current (continuous) at TC = 25 °C 28 A

D

I

Drain current (continuous) at TC = 100 °C 17.7 A

D

(1)

Drain current (pulsed) 112 A

Total dissipation at TC = 25 °C 190 W

TOT

(1)

Peak diode recovery voltage slope 15 V/ns

(2)

MOSFET dv/dt ruggedness 50 V/ns

Storage temperature - 55 to 150 °C

stg

T

Max. operating junction temperature 150 °C

j

peak

< V

(BR)DSS

, VDD=400 V.

Table 3. Thermal data

Value

Symbol Parameter

2

D

PA K

TO-220,

2

PA K

I

TO-247

Unit

R

thj-case

R

thj-pcb

R

thj-amb

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-case max 0.66 °C/W

Thermal resistance junction-pcb max

(1)

30 °C/W

Thermal resistance junction-ambient max 62.5 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not repetitive

I

AR

(pulse width limited by T

E

Single pulse avalanche energy (starting tj=25°C,

AS

= IAR; Vdd=50)

I

d

jmax

)

7A

510 mJ

DocID022853 Rev 3 3/22

22

Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (VDS = 0)

ID = 1 mA, VGS = 0 650 V

V

= 650 V

DS

V

= 650 V, TC=125 °C

DS

1

100µAµA

VGS = ± 25 V ± 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source
on-resistance

V

= 10 V, ID = 14 A 0.09 0.11 Ω

GS

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

C

C

o(tr)

Input capacitance

iss

V

Output capacitance - 75 - pF

oss

Reverse transfer

rss

capacitance

Equivalent

(1)

capacitance time

= 100 V, f = 1 MHz,

DS

V

= 0

GS

related

= 0 to 520 V, VGS = 0

V

Equivalent

(2)

C

o(er)

capacitance energy

DS

related

G

Intrinsic gate
resistance

f = 1 MHz open drain - 1.95 - Ω

R

- 2700 - pF

-6.3-pF

-220-pF

-63-pF

Q

Q

Q

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
V

DS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
when V

Total gate charge

g

Gate-source charge - 17 - nC

gs

Gate-drain charge - 28 - nC

gd

increases from 0 to 80% V

increases from 0 to 80% V

DS

VDD = 520 V, ID = 14 A,
V

= 10 V

GS

(see Figure 18)

DSS

DSS

4/22 DocID022853 Rev 3

- 62.5 - nC

when

oss

oss

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

(v) Voltage delay time

t

d

(v) Voltage rise time - 8.7 - ns

t

r

t

(i) Current fall time - 7.5 - ns

f

tc(off) Crossing time - 12 - ns

= 400 V, ID = 18 A,

V

DD

RG = 4.7 Ω, V

GS

= 10 V

(see Figure 19 and

Figure 22)

-59-ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current - 28 A

SD

(1)

Source-drain current (pulsed) - 112 A

(2)

Forward on voltage ISD = 28 A, VGS = 0 - 1.5 V

t

Reverse recovery time

rr

Reverse recovery charge - 5.6 µC

rr

I

SD

VDD = 100 V (see Figure 22)

Reverse recovery current - 32 A

t

Reverse recovery time

rr

Reverse recovery charge - 7.4 µC

rr

Reverse recovery current - 35 A

I

SD

VDD = 100 V, Tj = 150 °C
(see Figure 22)

= 28 A, di/dt = 100 A/µs

= 28 A, di/dt = 100 A/µs

- 350 ns

- 422 ns

DocID022853 Rev 3 5/22

22

Electrical characteristics STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

I

D

100

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs
100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM15311v1

I

D

100

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C
Tc=25°C

Single
pulse

AM15318v1

I

D

60

40

20

0

0

10

V

DS

(V)

20

(A)

5

15

80

VGS= 6 V

VGS= 7 V

VGS= 8 V

25

VGS= 9 V

10

30

50

70

AM15319v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK, I2PAK

Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247

Figure 3. Thermal impedance for D2PAK, I2PAK

and TO-220

and TO-220

6/22 DocID022853 Rev 3

Figure 6. Output characteristics Figure 7. Transfer characteristics

I

(A)

80

70

60

50

30

20

10

D

AM15320v1

VDS= 25 V

0

3

5

4

7

6

8409

V

GS

(V)

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 Electrical characteristics

V

GS

6

4

2

0

0

20

Q

g

(nC)

(V)

50

8

30

40

10

VDD=520 V

I

D

=14 A

60

300

200

100

0

400

500

V

DS

(V)

V

DS

12

70

80

AM15321v1

C

1000

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

1000

AM15323v1

V

GS(th)

1.00

0.90

0.80

0.70

-50

0

T

J

(°C)

(norm)

-25

1.10

75

25

50

100

ID = 250 µA

V

DS

= V

GS

AM05459v1

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

R

DS(on)

0.096

0.096

0.094

0.092

0.09

0.088

0.086

0.084

0.082

(Ω)

0.08
0

VGS=10V

5

10

15

20

25

AM15322v1

I

D

(A)

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy

Figure 12. Normalized gate threshold voltage vs

temperature

E

oss

AM15324v1

(µJ)

12

10

8

6

4

2

0

0

100

200

300

400

500

600

V

DS

Figure 13. Normalized on-resistance vs

temperature

R

DS(on)

(norm)

2.1

1.9

1.7

1.5

1.3

1.1

V

GS

= 10 V

ID = 14 A

AM05460v1

(V)

0.9

0.7

DocID022853 Rev 3 7/22

0.5

-50

-25

25

0

50

75

100

T

J

(°C)

22