January 2017
DocID16825 Rev 5
1/22
This is information on a product in full production.
www.st.com
STB20N95K5, STF20N95K5,
STP20N95K5, STW20N95K5
N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5
Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
Datasheet - production data
Order code
VDS
R
DS(on)
max.
ID
P
TOT
STB20N95K5
950 V
0.330 Ω
17.5 A
250 W
STF20N95K5
40 W
STP20N95K5
250 W
STW20N95K5
Order code
Marking
Package
Packing
STB20N95K5
20N95K5
D²PAK
Tape and reel
STF20N95K5
TO-220FP
Tube
STP20N95K5
TO-220
STW20N95K5
TO-247
Features
Figure 1: Internal schematic diagram
Industry’s lowest R
Industry’s best FoM (figure of merit)
Ultra-low gate charge
DS(on)
x area
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Contents
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
2/22
DocID16825 Rev 5
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 9
4 Package information ..................................................................... 10
4.1 D2PAK package information ............................................................ 10
4.2 TO-220FP package information ...................................................... 13
4.3 TO-220 type A package information ................................................ 15
4.4 TO-247 package information ........................................................... 17
4.5 D2PAK packing information ............................................................. 19
5 Revision history ............................................................................ 21
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Electrical ratings
DocID16825 Rev 5
3/22
Symbol
Parameter
Value
Unit
D²PAK
TO-220
TO-247
TO-220FP
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
17.5
A
ID
Drain current (continuous) at TC = 100 °C
11
A
I
D
(1)
Drain current (pulsed)
70
A
P
TOT
Total dissipation at TC = 25 °C
250
40
W
ESD
Gate-source human body model (R= 1,5 kΩ,
C = 100 pF)
2
kV
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t = 1 s;
TC = 25 °C)
2500
V
dv/dt
(2)
Peak diode recovery voltage slope
6
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
Tj
Operating junction temperature range
-55 to 150
°C
T
stg
Storage temperature range
Notes:
(1)
Pulse width limited by safe operating area.
(2)
ISD ≤ 17.5 A, di/dt ≤ 100 A/μs; VDS peak ≤ V
(BR)DSS
(3)
VDS ≤ 760 V
Symbol
Parameter
Value
Unit
D²PAK
TO-220
TO-247
TO-220FP
R
thj-case
Thermal resistance junction-case
0.5
3.1
°C/W
R
thj-amb
Thermal resistance junction-ambient
62.5
50
62.5
R
thj-pcb
(1)
Thermal resistance junction-pcb
30
Notes:
(1)
When mounted on 1 inch² FR-4 board, 2 Oz Cu.
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by T
jmax.
)
6 A EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
200
mJ
1 Electrical ratings
Table 2: Absolute maximum ratings
Table 3: Thermal data
Table 4: Avalanche characteristics
Electrical characteristics
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
4/22
DocID16825 Rev 5
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
950
V
I
DSS
Zero-gate voltage drain current
VGS = 0 V, VDS = 950 V
1
µA
VGS = 0 V, VDS = 950 V
TC = 125 °C
(1)
50
µA
I
GSS
Gate body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
V
GS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
3 4 5 V R
DS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 9 A
0.275
0.330
Ω
Notes:
(1)
Defined by design, not subject to production test.
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
1550 - pF
C
oss
Output capacitance
-
140 - pF
C
rss
Reverse transfer capacitance
- 1 -
pF
C
o(er)
(1)
Equivalent capacitance energy
related
VGS = 0 V, VDS = 0 to
760 V
-
65 - pF
C
o(tr)
(2)
Equivalent capacitance time
related
178 - pF
Rg
Intrinsic gate resistance
f = 1 MHz , ID = 0 A
-
3.5 - Ω
Qg
Total gate charge
VDD = 760 V,
ID = 17.5 A
VGS= 10 V
(see Figure 20: "Test
circuit for gate charge
behavior")
-
48 - nC
Qgs
Gate-source charge
- 9 -
nC
Qgd
Gate-drain charge
-
32.5 - nC
Notes:
(1)
C
o(er)
is a constant capacitance value that gives the same stored energy as C
oss
while VDS is rising from 0 to
80% V
DSS
.
(2)
C
o(tr)
is a constant capacitance value that gives the same charging time as C
oss
while VDS is rising from 0 to
80% V
DSS
.
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Table 6: Dynamic
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Electrical characteristics
DocID16825 Rev 5
5/22
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on
delay time
VDD= 475 V, ID = 9 A, RG = 4.7 Ω
VGS = 10 V
(see Figure 19: "Test circuit for resistive
load switching times" and Figure 24:
"Switching time waveform")
-
18 - ns
tr
Rise time
- 9 -
ns
t
d(off)
Turn-off
delay time
-
65 - ns
tf
Fall time
-
18 - ns
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain
current
- 17.5
A
I
SDM
(1)
Source-drain
current (pulsed)
- 70
A
V
SD
(2)
Forward on
voltage
ISD = 17.5 A, VGS = 0 V
- 1.5
V
trr
Reverse recovery
time
ISD = 17.5 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 21: "Test circuit for
inductive load switching and diode
recovery times")
-
513 ns
Qrr
Reverse recovery
charge
-
12 µC
I
RRM
Reverse recovery
current
-
46
A
trr
Reverse recovery
time
ISD = 17.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 21: "Test circuit for
inductive load switching and diode
recovery times")
-
670 ns
Qrr
Reverse recovery
charge
-
15 µC
I
RRM
Reverse recovery
current
-
44 A
Notes:
(1)
Pulse width limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR) GSO
Gate-source breakdown voltage
IGS = ± 1 mA, ID = 0 A
30 - -
V
Table 7: Switching times
Table 8: Source-drain diode
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
Table 9: Gate-source Zener diode
Electrical characteristics
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
6/22
DocID16825 Rev 5
Figure 2: Safe operating area for D²PAK and TO-220
Figure 3: Thermal impedance for D²PAK and
TO-220
Figure 4: Safe operating area for TO-220FP
Figure 5: Thermal impedance for TO-220FP
Figure 6: Safe operating area for TO-247
Figure 7: Thermal impedance for TO-247
2.1 Electrical characteristics (curves)
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Electrical characteristics
DocID16825 Rev 5
7/22
Figure 8: Output characteristics
Figure 9: Transfer characteristics
Figure 10: Gate charge vs gate-source voltage
Figure 11: Static drain-source on-resistance
Figure 12: Capacitance variation
Figure 13: Output capacitance stored energy
Electrical characteristics
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
8/22
DocID16825 Rev 5
Figure 14: Normalized gate threshold voltage vs
temperature
Figure 15: Normalized on-resistance vs
temperature
Figure 16: Maximum avalanche energy vs. starting TJ
Figure 17: Normalized V
(BR)DSS
vs. temperature
Figure 18: Source-drain diode forward characteristics
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Test circuits
DocID16825 Rev 5
9/22
Figure 19: Test circuit for resistive load
switching times
Figure 20: Test circuit for gate charge
behavior
Figure 21: Test circuit for inductive load
switching and diode recovery times
Figure 22: Unclamped inductive load test
circuit
Figure 23: Unclamped inductive waveform
Figure 24: Switching time waveform
AM01469v10
47 kΩ
2.7 kΩ
1 kΩ
IG= CONST
100 Ω
D.U.T.
+
pulse width
V
GS
2200
μF
V
G
V
DD
RL
3 Test circuits
Package information
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
10/22
DocID16825 Rev 5
0079457_A_rev22
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 D2PAK package information
Figure 25: D²PAK (TO-263) type A package outline
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Package information
DocID16825 Rev 5
11/22
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
10.40
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
0.4
V2
0°
8°
Table 10: D²PAK (TO-263) type A package mechanical data
Package information
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
12/22
DocID16825 Rev 5
Figure 26: D²PAK (TO-263) recommended footprint (dimensions are in mm)
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Package information
DocID16825 Rev 5
13/22
4.2 TO-220FP package information
Figure 27: TO-220FP package outline
Package information
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
14/22
DocID16825 Rev 5
Dim.
mm
Min.
Typ.
Max.
A
4.4
4.6 B 2.5
2.7 D 2.5
2.75
E
0.45
0.7
F
0.75 1 F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7 H 10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7 9 9.3
Dia 3 3.2
Table 11: TO-220FP package mechanical data
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Package information
DocID16825 Rev 5
15/22
4.3 TO-220 type A package information
Figure 28: TO-220 type A package outline
Package information
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
16/22
DocID16825 Rev 5
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Table 12: TO-220 type A mechanical data
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Package information
DocID16825 Rev 5
17/22
0075325_8
4.4 TO-247 package information
Figure 29: TO-247 package outline
Package information
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
18/22
DocID16825 Rev 5
Dim.
mm
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60 b 1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
5.45
5.60
L
14.20
14.80
L1
3.70
4.30
L2
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
Table 13: TO-247 package mechanical data
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Package information
DocID16825 Rev 5
19/22
4.5 D2PAK packing information
Figure 30: Tape outline
Package information
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
20/22
DocID16825 Rev 5
Tape
Reel
Dim.
mm
Dim.
mm
Min.
Max.
Min.
Max.
A0
10.5
10.7 A 330
B0
15.7
15.9 B 1.5 D 1.5
1.6 C 12.8
13.2
D1
1.59
1.61 D 20.2
E
1.65
1.85 G 24.4
26.4
F
11.4
11.6 N 100
K0
4.8
5.0 T 30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50 T
0.25
0.35
W
23.7
24.3
Figure 31: Reel outline
Table 14: D²PAK tape and reel mechanical data
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
Revision history
DocID16825 Rev 5
21/22
Date
Revision
Changes
25-Nov-2009
1
First release.
12-Jan-2010
2
Corrected VGS value in Table 2: Absolute maximum ratings.
22-Dec-2011
3
Inserted device in D2PAK.
Document status promoted from preliminary data to datasheet.
Added: Section 2.1: Electrical characteristics (curves)
Updated Section 4: Package mechanical data.
Added Section 5: Packaging mechanical data. Minor text changes.
06-Jun-2012
4
Figure 9: Transfer characteristics has been updated.
16-Jan-2017
5
Updated title, features, description and schematic diagram in cover
page.
Minor text changes in Section 1: "Electrical ratings" and Section 2:
"Electrical characteristics".
Updated Section 2.1: "Electrical characteristics (curves)"
Updated package information section.
5 Revision history
Table 15: Document revision history
STB20N95K5, STF20N95K5, STP20N95K5,
STW20N95K5
22/22
DocID16825 Rev 5
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