ST MICROELECTRONICS STW15N80K5 Datasheet

STB15N80K5, STF15N80K5,

D(2, TAB)

G(1)

S(3)

AM01476v1

TO-220

1

2

3

TAB

1

2

3

TO-220FP

TO-247

D2PAK

1

2

3

STP15N80K5, STW15N80K5

N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs

in D2PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet − production data

TAB

3

1

Figure 1. Internal schematic diagram

Table 1. Device summary

Features

Order code V

STB15N80K5 STF15N80K5 35 W STP15N80K5

800 V 0.375 Ω 14 A

STW15N80K5

• Industry’s lowest R

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

DS

R

DS(on)

max I

x area

P

D

TOT

190 W

Applications

• Switching applications

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Order code Marking Package Packaging

2

STB15N80K5

PAK Tape and reel

D

STF15N80K5 TO-220FP

15N80K5

TubeSTP15N80K5 TO-220

STW15N80K5 TO-247

October 2014 DocID023468 Rev 3 1/23

This is information on a product in full production.

www.st.com

23

Contents STB15N80K5, STF15N80K5, STP 15N8 0K5, STW 15N8 0K5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1 STB15N80K5, D²PAK (TO-263) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.2 STP15N80K5, TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.3 STF15N80K5, TO-220FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

4.4 STW15N80K5, TO-247 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

2/23 DocID023468 Rev 3

STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum rat ings

Value

Symbol Parameter

2

PAK,

D

TO-220, TO-247

TO-220FP

Unit

Gate- source volta ge ± 30 V Drain current (continuous) at TC = 25 °C 14 14 Drain current (continuous) at TC = 100 °C 8.8 8.8

(2)

Drain current (pulse d) 56 56 Total dissipation at TC = 25 °C 190 35 W

I

DM

P

V

GS

I

D

I

D

TOT

Max current during repetitive or single

I

AR

E

AS

pulse avalanche (pulse width limited by T

jmax

Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V)

Insulation withstand voltage (RMS) from

V

iso

dv/dt

T

stg

1. Limited by package.

2. Pulse width limited by safe operating area.

3. ISD ≤ 14 A, di/dt ≤ 100 A/µs, V

all three leads to external heat sink (t=1 s;T

(3)

Peak diode recovery voltage slope 4.5 V/ns Operating junction temperature

j

=25 °C)

C

Storage temperature

≤ V

Peak

)

(BR)DSS

(1)

A A A

4A

150 mJ

2500 V

-55 to 150 °C

Table 3. Thermal data

Symbol Parameter

R

thj-case

R

thj-amb

R

thj-pcb

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-case max

Thermal resist a nc e jun cti on-amb max 62.5 50 62.5

(1)

Thermal resistance junction-pcb max 30

DocID023468 Rev 3 3/23

Value

TO-220 TO-247 D

0.66 3.6

2

PAK TO-220FP

Unit

°C/W

Electrical characteristics STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5

2 Electrical characteristics

(T

= 25 °C unless otherwise specified).

CASE

T a ble 4. On/off states

Symbol Parameter T est cond ition s Min. T yp . Max. Uni t

V

(BR)DSS

V

R

I

DSS

I

GSS

GS(th)

DS(on)

Drain-source breakdown voltage (V

GS

= 0)

Zero gate voltage drain current (V

GS

= 0)

Gate body leakage current (V

= 0)

DS

Gate threshold volta ge V Static drain-source on

resistance

= 1 mA 800 V

I

D

V

= 800 V 1 µA

DS

V

= 800 V, Tc=125 °C 50 µA

DS

= ± 20 V ±10 µA

V

GS

= VGS, ID = 100 µA 3 4 5 V

DS

= 10 V , ID= 7 A 0.3 0.375 Ω

V

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

o(tr)

C

o(er)

Input capacitance

iss

Output capacitance - 85 - pF

oss

Reverse transfer

rss

capacitance Equivalent c apac itance tim e

(1)

V

=100 V, f=1 MHz, VGS=0

DS

V

Equivalent capacitance

(2)

GS

energy rel ated

- 1100 - pF

-1.5- pF

-113- pF

-49-pF

R

Q Q Q

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C VDS increases from 0 to 80% V

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C when V

Intrinsic gate resistance f = 1MHz, ID=0 - 4.5 - Ω

G

Total gate charg e

g

Gate-source charge - 6 - nC

gs

Gate-drain charge - 22 - nC

gd

DSS

increases from 0 to 80% V

DS

DSS

= 640 V, ID = 14 A

V

DD

V

=10 V

GS

(see Figure 20)

4/23 DocID023468 Rev 3

-32-nC

when

oss

STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

= 400 V, ID = 7 A,

V

t

Rise time - 17.6 - ns

r

Turn-of f del ay time - 44 - ns

t

Fall time - 10 - ns

f

DD

R

=4.7 Ω, VGS=10 V

G

(see Figure 19 and 24)

-19-ns

T a ble 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

t

Q

I

RRM

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Source-drain current - 14 A Source-drain current (pulsed) - 56 A

(1)

Forward on voltage ISD= 14 A, VGS=0 - 1.5 V Reverse recovery time

rr

Reverse recovery charge - 8.2 μC

rr

Reverse recovery current - 37 A Reverse recovery time ISD= 14 A,VDD= 60 V

rr

Reverse recovery charge - 10 μC

rr

Reverse recovery current - 35 A

I

= 14 A, VDD= 60 V

SD

di/dt = 100 A/µs,

(see Figure 21)

di/dt=100 A/µs, Tj=150 °C

(see Figure 21)

- 445 ns

- 580 ns

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max Unit

V

(BR)GSO

Gate-source breakdown voltage IGS= ± 1mA, ID= 0 30 - - V

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components.

DocID023468 Rev 3 5/23

Electrical characteristics STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5

I

D

10

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

1µs

10µs

100µs

10ms

Tj=150°C Tc=25°C

Single pulse

1ms

0.1

AM15432v1

I

D

10

1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

1µs

10µs

100µs

10ms

Tj=150°C Tc=25°C

Single pulse

1ms

0.1

0.01

AM15433v1

I

D

10

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

1µs

10µs

100µs

10ms

Tj=150°C Tc=25°C

Single pulse

1ms

0.1

AM15434v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for D2PAK and

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

TO-220

Figure 3. Thermal impedance for D2PAK and

TO-220

Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

6/23 DocID023468 Rev 3

STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Electrical characteristics

I

D

24

12

0

8

V

DS

(V)

16

(A)

4

12

VGS= 6 V

VGS= 7 V

VGS= 8 V

VGS= 9 V

6

18

30

VGS= 10 V

AM15435v1

V

GS

6

4

2

0

5

Q

g

(nC)

(V)

20

8

10

15

10

VDD=640 V

I

D

=14 A

25

300

200

100

0

400

500

V

DS

(V)

V

DS

12

30

600

AM15443v1

R

DS(on)

0.3

0.2

0.1

0

10

I

D

(A)

(Ω)

5

15

VGS=10V

0.5

0.4

20

25

AM15441v1

C

1000

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

AM15442v1

Figure 8. Output characteristics Figure 9. Transfer characteristics

I

D

(A)

30

24

18

12

6

VDS= 20 V

AM15436v1

0

4

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance

6

8

10

V

GS

(V)

Figure 12. Capacitance variations Figure 13. Source-drain diode forward

V (V)

SD

characteristics

AM15439v1

TJ=-50°C

0.9

TJ=25°C

0.8

0.7

TJ=150°C

0.6 6

4

10

8

12

SD

(A)

I

DocID023468 Rev 3 7/23

ST MICROELECTRONICS STW15N80K5 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Internal schematic diagram

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum rat ings

Table 3. Thermal data

2 Electrical characteristics

T a ble 4. On/off states

Table 5. Dynamic

Table 6. Switching times

T a ble 7. Source drain diode

Table 8. Gate-source Zener diode

2.1 Electrical characteristics (curves)

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

Figure 8. Output characteristics Figure 9. Transfer characteristics

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance

Figure 12. Capacitance variations Figure 13. Source-drain diode forward