ST MICROELECTRONICS STW13NK60Z Datasheet

N-channel 600 V, 0.48 Ω, 13 A, TO-220, TO-220FP, D2PA K

3

TO-247 Zener-protected SuperMESH™ Power MOSFET

Features

R

Typ e V

STB13NK60ZT4
STP13NK60ZFP

STP13NK60Z

STW13NK60Z

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

DSS

600 V
600 V
600 V
600 V

DS(on)

max

<0.55 Ω
<0.55 Ω
<0.55 Ω
<0.55 Ω

I

D

13 A
13 A
13 A
13 A

STB13NK60ZT4, STP13NK60Z

STP13NK60ZFP, STW13NK60Z

Pw

150 W

35 W
150 W
150 W

TO-247

TO-220

3

2

1

D²PAK

3

2

1

TO-220FP

3

1

2

1

Application

■ Switching applications

Description

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.

Table 1. Device summary

Order codes Marking Package Packaging

STB13NK60ZT4 B13NK60Z D²PAK Tape and reel

STP13NK60ZFP P13NK60ZFP TO-220FP Tube

STP13NK60Z P13NK60Z TO-220 Tube

STW13NK60Z W13NK60Z TO-247 Tube

Figure 1. Internal schematic diagram

April 2009 Doc ID 8527 Rev 7 1/18

www.st.com

18

Contents STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 Doc ID 8527 Rev 7

STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Val ue

Symbol Parameter

Drain-source voltage (VGS = 0)

DS

Gate-source voltage ± 30 V

GS

Drain current (continuous) at TC = 25 °C

D

Drain current (continuous) at TC = 100 °C

D

(2)

Drain current (pulsed) 52

Total dissipation at TC = 25 °C

I

DM

P

V

V

I

I

TOT

TO-220 / TO-247

D²PAK

TO-220FP

600 V

13

8.2

8.2

150 35 W

13

52

(1)

(1)

(1)

Derating factor 1.20 0.27 W/°C

Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5 kΩ) 4000 V

(3)

dv/dt

V

ISO

T

T

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. I

SD

Peak diode recovery voltage slope 4.5 V/ns

Insulation withstand voltage (AC) -- 2500 V

Operating junction temperature

j

Storage temperature

stg

≤ 13 A, di/dt ≤ 200 A/µs, VDD ≤ V

(BR)DSS

, TJ ≤ T

JMAX

-55 to 150 °C

Unit

A

A

A

Table 3. Thermal data

Val ue

Symbol Parameter

R

R

thj-pcb

R

thj-case

thj-amb

T

Thermal resistance junction-case max 0.83 3.6 °C/W

(1)

Thermal resistance junction-pcb max -- 60 -- °C/W

Thermal resistance junction-amb max 62.5 °C/W

Maximum lead temperature for soldering

l

purpose

TO-220

TO-247

D²PAK TO-220FP

300 °C

1. When mounted on minimum footprint

Doc ID 8527 Rev 7 3/18

Unit

Electrical ratings STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit

I

AR

E

AS

Avalanche current, repetitive or not­repetitive (pulse width limited by Tj max)

Single pulse avalanche energy
(starting Tj=25 °C, ID=IAR, VDD= 50 V)

10 A

400 mJ

4/18 Doc ID 8527 Rev 7

STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP Electrical characteristics

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Figure 2. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage
current (V

DS

= 0)

Gate threshold voltage

Static drain-source on
resistance

= 1 mA, VGS= 0

I

D

V

= Max rating,

DS

V

= Max rating,Tc=125 °C

DS

= ±20 V

V

GS

V

= V

DS

, ID = 100 µA

GS

VGS= 10 V, ID= 4.5 A

600 V

1

50

±10 µA

3 3.75 4.5 V

0.48 0.55 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

g

fs

transconductance

V

=8 V, ID = 5 A

DS

-11 S

µA
µA

C

C

oss

C

C

oss eq.

Q

Q

Q

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. C

oss eq.

increases from 0 to 80% V

Input capacitance

iss

Output capacitance
Reverse transfer

rss

capacitance

Equivalent output

(2)

capacitance

g

Total gate charge
Gate-source charge

gs

Gate-drain charge

gd

is defined as a constant equivalent capacitance giving the same charging time as C

DSS

V

=25 V, f=1 MHz, VGS=0

DS

=0, V

V

GS

=480 V, ID = 10 A

V

DD

=10 V

V

GS

=0 to 480 V

DS

(see Figure 21)

-

- 125 pF

-

2030

210

48

66
11
33

92 nC

when VDS

oss

pF
pF
pF

nC
nC

Doc ID 8527 Rev 7 5/18

Electrical characteristics STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

r

t

d(off)

t

t

r(Voff)

t

t

c

Turn-on delay time
Rise time

Turn-off delay time
Fall time

f

Off-voltage rise time
Fall time

f

Cross-over time

VDD= 300 V, ID= 5 A,

=4.7 Ω, VGS=10 V

R

G

(see Figure 20)

VDD=300 V, ID= 5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 20)

=480 V, ID= 10 A,

V

DD

=4.7 Ω, VGS=10 V

R

G

(see Figure 20)

22

­14

61

­12

10

-

9

20

ns

­ns

ns

­ns

ns

-

ns
ns

Table 7. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

BV

GSO

Gate-source breakdown
voltage

Igs=±1mA
(open drain)

30 - - V

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Source-drain current
Source-drain current

(1)

(pulsed)

(2)

Forward on voltage

Reverse recovery time
Reverse recovery charge

rr

Reverse recovery current

= 10 A, VGS=0

I

SD

= 10 A,

I

SD

di/dt = 100 A/µs,

=35 V, Tj=150 °C

V

DD

-

10
40

A
A

-1.6V

570

-

4.5
16

ns
µC

A

6/18 Doc ID 8527 Rev 7