STMicroelectronics STTH5R06 Technical data

®

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Table 1: Main Product Characteristics

I

F(AV)

V

RRM

T

j

VF (typ)

(max)

t

rr

FEATURES AND BENEFITS

■ Ultrafast switching

■ Low reverse recovery current

■ Low thermal resistance

■ Reduces switching losses

DESCRIPTION

The STTH5R06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode power factor corrections and hard switching conditions. This device is also intended for use as a free wheeling diode in power supplies and other power switching applications.

5 A

600 V

175°C

1.4 V

40 ns

TO-220AC

STTH5R06D

K

A

NC

D2PA K

STTH5R06G

STTH5R06

A

K

TO-220FPAC

STTH5R06FP

K

NC

DPAK

STTH5R06B

A

K

A

Table 2: Order Codes

Part Number Marking

STTH5R06D STTH5R06D

STTH5R06FP STTH5R06FP

STTH5R06B STTH5R06B

Part Number Marking

STTH5R06B-TR STTH5R06B

STTH5R06G STTH5R06G

STTH5R06G-TR STTH5R06G

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

Repetitive peak reverse voltage 600 V

RMS forward voltage

TO-220AC / TO-220FPAC / D2PAK

20 A

DPAK 10

I

F(AV)

Average forward current TO-220AC / DPAK

Tc = 135°C δ = 0.5 5 A

/ D2PAK

TO-220FPAC Tc = 105°C δ = 0.5 5

I

FSM

T

September 2004 REV. 4

Surge non repetitive forward current tp = 10ms sinusoidal 50 A

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

j

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STTH5R06

Table 4: Thermal Resistance

Symbol Parameter Value (max). Unit

R

th(j-c)

Table 5: Static Electrical Characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

IR * Reverse leakage current Tj = 25°C VR = V

VF ** Forward voltage drop Tj = 25°C IF = 5A 2.9 V

Pulse test: * tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation: P = 1.164 x I

Table 6: Dynamic Characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

t

Junction to case

** tp = 380 µs, δ < 2%

Reverse recovery

rr

time

TO-220AC / DPA / D2PAK

3.0 °C/W

TO-220FPAC 5.5

RRM

20 µA

Tj = 125°C 25 250

Tj = 125°C 1.4 1.8

+ 0.128 I

F(AV)

F2(RMS)

Tj = 25°C IF = 0.5A Irr = 0.25A IR =1A 25 ns

IF = 1A dIF/dt = -50 A/µs VR =30V 40

I

RM

Reverse recovery current

Tj = 125°C IF = 5A VR = 400V

dIF/dt = -200 A/µs

S factor Softness factor 0.35

Qrr Reverse recovery

charges

t

V

Figure 1: Conduction losses versus average current

P(W)

13

12

11

10

9

8

7

6

5

4

3

2

1

0

01234567

Forward recovery

fr

time

Forward recovery

FP

voltage

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

Tj = 25°C IF = 5A dIF/dt = 40 A/µs

VFR = 1.1 x V

Fmax

Tj = 25°C IF = 5A dIF/dt = 40 A/µs

VFR = 1.1 x V

Fmax

Figure 2: Forward voltage drop versus forward current

I (A)

FM

δ = 0.5

δ

=tp/T

δ = 1

T

tp

50

45

40

35

30

25

20

15

10

5

0

0123456

T =125°C

j

(typical values)

T =125°C

j

(maximum values)

V (V)

FM

5.0 6.0 A

110 nC

150 ns

4.5 V

T =25°C

j

(maximum values)

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STTH5R06

Figure 3: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC, DPAK, D2PAK)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

δ

=tp/T

T

tp

Figure 5: Peak reverse recovery current versus dIF/dt (90% confidence)

I (A)

RM

22

V =400V

R

T =125°C

j

20

18

16

14

12

10

8

6

4

2

0

0 200 400 600 800 1000

I =0.5 x I

FF(AV)

I =0.25 x I

FF(AV)

I=I

dI /dt(A/µs)

F

FF(AV)

I =2 x I

FF(AV)

Figure 4: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAC)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

δ = 0.2

0.3

δ = 0.1

0.2

0.1

Single pulse

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

δ

=tp/T

T

tp

Figure 6: Reverse recovery time versus dIF/dt (90% confidence)

t (ns)

rr

80

70

I =2 x I

60

50

40

30

20

10

0

0 200 400 600 800 1000

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

dI /dt(A/µs)

F

V =400V

R

T =125°C

j

Figure 7: Reverse recovery charges versus dIF/dt (90% confidence)

Q (nC)

rr

350

V =400V

R

T =125°C

j

300

I =2 x I

250

200

150

100

50

0

0 200 400 600 800 1000

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

dI /dt(A/µs)

F

Figure 8: Softness factor versus dIF/dt (typical values)

S factor

0.70

I=I

FF(AV)

V =400V

R

0.65

T =125°C

j

0.60

0.55

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0 200 400 600 800 1000

dI /dt(A/µs)

F

3/9