STMicroelectronics STTH302S Technical data
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
STTH302S
I
F(AV)
V
RRM
3A
200 V
Tj (max) 175 °C
(max) 0.75 V
V
F
trr (max) 35 ns
FEATURES AND BENEFITS
Very low conduction losses
■
Negligible switching losses
■
Low forward and reverse recovery times
■
High junction temperature
■
DESCRIPTION
The STTH302S, which is using ST’s new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
SMC
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 200 V
Average forward current Tl = 107°C δ =0.5 3 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A
Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature 175 °C
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-l)
April 2002 - Ed: 1A
Junction to lead 20 °C/W
1/5
STTH302S
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverse leakage
R
current
V
** Forward voltage drop Tj= 25°C I
F
Tj = 25°C V
R=VRRM
3 µA
Tj = 125°C 4 75
= 3 A 0.95 V
F
Tj = 125°C I
Pulse test: * tp = 5ms, δ <2%
** tp = 380µs, δ <2%
= 3 A 0.66 0.75
F
To evaluate the maximum conduction losses use the following equation :
P=0.60xI
F(AV)
+ 0.05 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
Tj = 25°C I
Tj = 25°C I
Tj = 25°C I
=1 A Irr = -50 A/µs
F
VR= 30V
=3A dIF/dt=50A/µs
F
70 ns
VFR=1.1xVFmax
=3A dIF/dt=50A/µs 1.6 V
F
35 ns
voltage
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