STMicroelectronics STTH102 Technical data

®

HIGH EFFICIENCY ULTRAFAST DIODE

Table 1: Main Product Characteristics

I

F(AV)

V

RRM

T

(max) 175°C

j

V

(max) 0.78 V

F

(max) 20 ns

t

rr

FEATURES AND BENEFITS

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

DESCRIPTION

The STTH102, which is using ST’s new 200V
planar technology, is specially suited for switching
mode base drive and transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.

1 A

200 V

SMA

(JEDEC DO-214AC)

STTH102A

Table 2: Order Codes

Part Number Marking

STTH102A U12

STTH102 STTH102

STTH102RL STTH102

STTH102

DO-41

STTH102

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(AV)

I

FSM

T

T

Repetitive peak reverse voltage 200 V

Average forward current

Surge non repetitive forward
current

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

j

DO-41 T

SMA

DO-41 50

SMA T

= 148°C δ = 0.5

L

= 130°C δ = 0.5

L

tp = 10 ms Sinusoidal

1A

40

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

June 2005

REV. 4

A

1/6

STTH102

Table 4: Thermal Resistance

Symbol Parameter Value Unit

R

th(j-l)

Junction to lead

Lead length = 10 mm DO-41 50

Table 5: Static Electrical Characteristics

Symbol Parameter Tests conditions Min. Typ Max. Unit

= 25°C

T

I

*

R

V

F

Reverse leakage current

**

Forward voltage drop

j

T

= 125°C

j

= 25°C

T

j

= 125°C IF = 1A

T

j

Pulse test: * tp = 5 ms, δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.65 x I

V

= V

R

= 700 mA

I

F

(SMA)

= 1A

I

F

F(AV)

SMA 30

RRM

0.68 0.78

+ 0.130 I

F2(RMS)

°C/W

1

125

0.90

0.97

µA

V

Figure 1: Average forward power dissipation
versus average forward current (SMA)

P (W)

F(AV)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3: Average forward current versus
ambient temperature (δ = 0.5) (SMA)

I (A)

F(AV)

1.2

1.0

0.8

R=R

th(j-a) th(j-I)

Figure 2: Average forward power dissipation
versus average forward current (DO-41)

P (W)

F(AV)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.00 0.25 0.50 0.75 1.00 1.25

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 4: Average forward current versus
ambient temperature (δ = 0.5) (DO-41)

I (A)

F(AV)

1.2

1.0

0.8

R=R

th(j-a) th(j-I)

R =120°C/W

0.6

0.4

0.2

0.0

0 25 50 75 100 125 150 175

δ

=tp/T

T

tp

th(j-a)

T (°C)

amb

2/6

R =110°C/W

0.6

0.4

δ

=tp/T

T

tp

0.2

0.0

0 25 50 75 100 125 150 175

th(j-a)

T (°C)

amb