STMicroelectronics STTH1002C Technical data
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 175 °C
V
(typ) 0.78 V
F
t
(typ) 20 ns
rr
FEATURES AND BENEFITS
Suited for SMPS
■
Low losses
■
Low forward and reverse recovery times
■
Insulated package: TO-220FPAB
■
High junction temperature
■
Low leakage current
■
DESCRIPTION
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in DPAK, D
TO220-FPAB and I
2
PAK, this device is intended
for use in low voltage, high frequency inverters,
free wheeling and polarity protection applications.
Upto2x8A
200 V
2
PAK, TO-220AB,
TO-220AB
A1
STTH1002CT
A1
TO-220FPAB
STTH1002CFP
STTH1002CB
STTH1002C
A1
A2
A2
K
A2
K
K
K
A1
DPAK
K
I2PAK
STTH1002CR
K
D2PAK
STTH1002CG
A2
A2
K
A1
K
A2
A1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
RMS forward current TO-220AB / TO-220FPAB / I2PAK / D2PAK /
Average forward
current δ =0.5
I
FSM
T
stg
Tj
March 2004 - Ed: 4
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
DPAK
TO-220AB / I2PAK
2
/D
PAK / DPAK
Tc = 155°C Per diode
Tc = 150°C Per device
Tc = 135°C Per diode
Tc = 125°C Per device
TO-220FPAB Tc = 140°C Per diode
Tc = 120°C Per device
Tc = 110°C Per diode
Tc = 75°C Per device
200 V
20 A
10
5A
10
8
16
5
10
8
16
50 A
- 65 + 175 °C
175 °C
1/8
STTH1002C
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-c)
Junction to case TO-220AB / I2PAK / D2PAK
/ DPAK
Per diode
Per device
TO-220FPAB Per diode
Per device
R
th (j-c)
Coupling TO-220AB / I2PAK / D2PAK / DPAK
TO-220FPAB
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x R
(per diode) + P(diode2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
4.0 °C/W
2.5
6.5
5
1.0 °C/W
3.5
*
I
R
Reverse leakage
current
**
V
F
Pulse test: * tp = 5ms, δ <2%
Forward voltage drop Tj = 25°C IF=5A
** tp = 380µs, δ <2%
Tj = 25°C V
Tj = 125°C
Tj = 25°C I
Tj = 150°C I
Tj = 150°C I
R=VRRM
=10A
F
=5A
F
=10A
F
340
0.78 0.89
5µA
1.1 V
1.25
1.05
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x I
F(AV)
+ 0.032 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse
recovery time
Tj = 25°C IF=1A VR= 30V
dI
/dt = 100 A/µs
F
20 25 ns
2/8
I
RM
t
fr
V
FP
Reverse
recovery current
Forward
recovery time
Forward
Tj = 125°C IF=5A VR= 160V
dI
/dt = 200 A/µs
F
Tj = 25°C IF=5A dIF/dt = 100 A/µs
V
= 1.1 x VFmax
FR
Tj = 25°C IF=5A dIF/dt = 100 A/µs
5.9 7.6 A
110 ns
2.4 V
recovery voltage
STTH1002C
Fig. 1: Peak current versus duty cycle (per diode).
I (A)
M
60
50
40
30
20
10
P = 2W
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P = 10W
P = 5W
δ
I
M
δ
=tp/T
T
tp
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
I (A)
FM
100
90
80
70
60
T =150°C
50
40
30
20
10
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
j
V (V)
FM
T =25°C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
T =150°C
j
V (V)
FM
T =25°C
j
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
2
PAK, D2PAK, DPAK).
I
Z/R
th(j-c) th(j-c)
1.0
Single pulse
t(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00
p
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
Z/R
th(j-c) th(j-c)
1.0
Single pulse
t(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00
p
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
100
V (V)
10
0 50 100 150 200
R
F=1MHz
V =30mV
OSC RMS
T =25°C
j
3/8
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