STMicroelectronics STS5PF30L Technical data
STS5PF30L
P-CHANNEL 30V - 0.070 Ω - 5A SO-8
STRIPFET™ POWER MOSFET
TYPE
STS5PF30L 30V <0.080
■ TYPICAL R
■ STANDARD OUTLIN E FO R EASY
V
DSS
(on) = 0.070 Ω
DS
R
DS(on)
I
D
5 A
Ω
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ BATTERY MANAGMENT IN NOMAD IC
EQUIPMENT
■ POWER MANAGMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
(
Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 16 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
•)
Drain Current (pulsed) 20 A
Total Dissipation at TC = 25°C
current has to be rever sed
30 V
30 V
5A
3A
2.5 W
1/8February 2002
STS5PF30L
THERMA L D ATA
Rthj-amb
T
T
stg
(*) Mounted on FR-4 board
(*)Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
j
Storage Temperature
Max 50
-55 to 150
-55 to 150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
30 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 2.5 A
V
GS
V
= 4.5 V ID = 2.5 A
GS
= 250 µA
D
1V
0.070
0.085
0.080
0.10
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
=15 V ID = 2 A
DS
= 15V, f = 1 MHz, VGS = 0
V
DS
10 S
1350
490
130
µA
µA
Ω
Ω
pF
pF
pF
2/8
STS5PF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
(*)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 15 V ID = 2 A
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 1)
= 24V ID= 5A VGS=4.5V
V
DD
(see test circuit, Figure 2)
25
35
12.5
5
3
16 nC
ns
ns
nC
nC
SWITCHING OFF
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
125
35
= 15 V ID = 2 A
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulse wi dth [ 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by T
Safe Operating Area
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
JMAX
I
= 5 A VGS = 0
SD
= 5 A di/dt = 100A/µs
I
SD
V
= 15 V Tj = 150°C
DD
(Inductive Load, Figure 3)
Thermal Impedance
5
20
1.2 V
45
36
1.6
ns
ns
A
A
ns
nC
A
3/8
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