STMicroelectronics STS4DNF60L Technical data
STS4DNF60L
N-CHANNEL 60V - 0.045 Ω - 4A SO-8
STripFET™ POWER MOSFET
Table 1: General Features
TYPE
STS4DNF60L 60 V <0.055 Ω 4 A
■ TYPICAL R
■ STANDARD OUTLINE FOR EASY
V
DSS
(on) = 0.045 Ω
DS
R
DS(on)
I
D
AUTOMATED SURFACE MOUN T AS SEM B LY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high p acking density for low onresistance, rugged ava lanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
Figure 1:Package
SO-8
Figure 2: Internal Schematic Diagram
Table 2: Order code
STS4DNF60L S4DNF60L SO-8 TAPE & REEL
SALES TYPE MARKING PACKAGE PACKAGING
Table 3: ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
(•)
I
DM
P
tot
(•) Pulse width limited by safe operating area.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 15 V
Drain Current (conti nuo us ) at TC = 25°C
Single Operation
Drain Current (conti nuo us ) at T
Single Operation
Drain Current (pulse d) 16 A
Total Dissipation at TC = 25°C
Dual Operation
Total Dissipation at T
Single Operation
= 25°C
C
= 100°C
C
60 V
60 V
4
2.5
2.5
1.6
Rev. 5.0
.
A
A
W
W
1/9May 2005
STS4DNF60L
Table 4: THERMAL DATA
Rthj-amb
T
T
stg
(*)
Mounted on FR-4 board (t >10 sec.)
(*)Thermal Resistance Junction-ambient Single Operation
Thermal Operating Junction-ambient
j
Storage Temperature
Dual Operating
78
62.5
150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
Table 5: OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
60 V
Breakdown Voltage
= Max Rating
I
DSS
I
GSS
Table 6: ON
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
(1)
DS
= 0)
GS
= 0)
V
DS
= Max Rating TC = 125°C
V
DS
= ± 15 V
V
GS
1
10
±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= VGS ID = 250 µA
DS
V
= 10 V ID = 2 A
GS
= 4.5 V ID = 2 A
V
GS
11.72.5V
0.045
0.050
0.055
0.065
Table 7: DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS>ID(on)xRDS(on)max ID
V
= 25V, f = 1 MHz, VGS = 0
DS
=2 A
7S
1030
140
40
µA
µA
Ω
Ω
pF
pF
pF
2/9
STS4DNF60L
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
To tal Ga te Char ge
Gate-Source Charg e
Gate-Drain Charge
Table 9: SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Turn-off Delay Time
Fall Time
Cross-over Time
Table 10: SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)
Pulse width limited by safe operating area.
Source-drain Curre nt
)
Source-drain Curre nt (pu lse d)
(•
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 30 V ID = 2.5 A
DD
=4.7 Ω VGS = 4.5 V
R
G
(Resistive Load, Figu re )
V
= 48V ID= 4A VGS=4.5V
DD
V
= 48 V ID = 5 A
clamp
=4.7Ω, V
R
G
GS
= 4.5 V
(Inductive Load, Figu re 5)
I
= 4 A VGS = 0
SD
I
= 4 A di/dt = 100A/µs
SD
= 20 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
15
28
15
15
20
20
85
85
4
4
25 ns
4
16
1.2 V
2
ns
ns
nC
nC
nC
ns
ns
A
A
ns
nC
A
Figure 3: Safe Operating Area
Figure 4: Therm al Im pe da nce
3/9
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