STMicroelectronics STR2N2VH5, STT5N2VH5 Schematic [ru]

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STR2N2VH5,

SOT-23

SOT23-6L

STT5N2VH5

N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET

in SOT-23 and SOT23-6L packages

Datasheet − preliminary data

Features

Order codes V

STR2N2VH5

STT5N2VH5 5 A 1.6 W

■ Very low profile package

■ Conduction losses reduced

■ Switching losses reduced

■ 2.5 V gate drive

■ Very low threshold device

20 V

DS(on)

0.03 Ω

0.04 Ω

max I

=4.5 V)

=2.5 V)

TOT

2.3 A 0.35 W

Figure 1. Internal schematic diagram

Applications

■ Switching applications

Description

These devices are N-channel Power MOSFETs developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.

Table 1. Device summary

Order codes Marking Package Packaging

STR2N2VH5

STD1

STT5N2VH5 SOT23-6L

SOT-23

Tape and reel

January 2013 Doc ID 023799 Rev 2 1/14

This is preliminar y information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

www.st.com

Contents STR2N2VH5, STT5N2VH5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14 Doc ID 023799 Rev 2

STR2N2VH5, STT5N2VH5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Val ue

Symbol Parameter

SOT-23 SOT23-6L

Unit

TOT

1. This value is rated according to R

2. Pulse width is limited by safe operating area

Table 3. Thermal data

Drain-source voltage 20 V

Gate-source voltage ± 8 V

(1)

Drain current (continuous) at T

(1)

Drain current (continuous) at T

(1)(2)

Drain current (pulsed) 9.2 20 A

(1)

Total dissipation at T

Storage temperature

stg

Max. operating junction temperature °C

= 25 °C 0.35 1.6 W

pcb

thj-pcb

= 25 °C 2.3 5 A

pcb

= 100 °C 1.4 3.1 A

pcb

Symbol Parameter

(1)

thj-pcb

1. When mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec.

Thermal resistance junction-pcb max 357 78 °C/W

- 55 to 150

°C

Val ue

Unit

SOT-23 SOT23-6L

Doc ID 023799 Rev 2 3/14

Electrical characteristics STR2N2VH5, STT5N2VH5

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate-body leakage current (VDS = 0)

ID = 1 mA, VGS = 0 20 V

= 20 V

= 20 V, TC=125 °C

10µAµA

VGS = ± 8 V ± 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 0.7 V

Static drain-source onresistance

= 4.5 V, ID = 2 A

VGS = 2.5 V, ID = 2 A

0.025

0.031

0.03

0.04ΩΩ

Table 5 . Dy n amic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C C C

Q Q Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

= 16 V, f = 1 MHz,

VGS = 0

VDD = 16 V, ID = 2 A, VGS = 4.5 V (see Figure 3)

550

110

TBD

pF pF pF

nC nC nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

d(on)

r (V)

d (off)

4/14 Doc ID 023799 Rev 2

Voltage delay time Voltage rise time Current fall time Crossing time

VDD = 16 V, ID = 2 A, RG = 4.7 Ω, V

(see Figure 4 and Figure 7)

= 4.5 V

TDB TBD

TBD

ns ns

STR2N2VH5, STT5N2VH5 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

SDM

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 2 A, VGS = 0 - 1.1 V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 2 A, di/dt = 100 A/µs VDD = 16 V, Tj = 150 °C (see Figure 7)

TBD

TBD TBD

2.3

9.2AA

ns µC

Doc ID 023799 Rev 2 5/14

Test circuits STR2N2VH5, STT5N2VH5

AM01468v1

VGS

D.U.T.

2200

μF

3.3 μF

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

i=20V=VGMAX

2200 μF

IG=CONST

100Ω

100nF

D.U.T.

AM01470v1

D.U. T.

FAST DIODE

L=100μH

μF

3.3

1000

μF

AM01472v1

V(BR)DSS

VDD

IDM

3 Test circuits

Figure 2. Switching times test circuit for

resistive load

Figure 4. Test circuit for inductive load

switching and diode recovery times

Figure 3. Gate charge test circuit

Figure 5. Unclamped inductive load test

circuit

2200

μF

3.3 μF

VDD

D.U. T.

Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform

90%Vds

(v)

Vgs

90%Vgs

))

Vgs(I(t))

10%Vds

6/14 Doc ID 023799 Rev 2

Vds

(v)

AM01471v1

Inductive Load Turn

(i)

(off)

-off

90%Id

10%Id

AM05540v1

STR2N2VH5, STT5N2VH5 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK

packages, depending on their level of environmental compliance. ECOPACK®

is an ST trademark.

Doc ID 023799 Rev 2 7/14

Package mechanical data STR2N2VH5, STT5N2VH5

0053390_I

Table 8. SOT-23 mechanical data

Dim.

Min. Typ. Max.

A0.89 1.40

A1 0 0.10

B0.30 0.51

C 0.085 0.18

D2.75 3.04

e0.85 1.05

e1 1.70 2.10

E1.20 1.75

H2.10 3.00

L0.60

S0.35 0.65

L1 0.25 0.55

a0° 8°

Figure 8. SOT-23 mechanical drawing

8/14 Doc ID 023799 Rev 2

STR2N2VH5, STT5N2VH5 Package mechanical data

2.89

0.95

0.48

0.97

0.99

SOT-23 footp_I

Figure 9. SOT-23 recommended footprint

(a)

a. Dimensions are in mm.

Doc ID 023799 Rev 2 9/14

Package mechanical data STR2N2VH5, STT5N2VH5

Table 9. SOT23-6L package mechanical data

Dim.

Min. Typ. Max.

A 0.90 1.45

A1 0.00 0.15

A2 0.90 1.30

b 0.30 0.50

C 0.09 0.20

D 2.80 3.05

E 1.50 1.75

e0.95

H 2.60 3.00

L 0.30 0.60

φ 0° 10°

10/14 Doc ID 023799 Rev 2

STR2N2VH5, STT5N2VH5 Package mechanical data

7049714_I

Figure 10. SOT23-6L package drawing

Doc ID 023799 Rev 2 11/14

Package mechanical data STR2N2VH5, STT5N2VH5

SOT-23-6L footp_I

Figure 11. SOT23-6L recommended footprint

(b)

b. All dimensions are in millimeters

12/14 Doc ID 023799 Rev 2

STR2N2VH5, STT5N2VH5 Revision history

5 Revision history

Table 10. Document revision history

Date Revision Changes

19-Oct-2012 1 First release.

14-Jan-2013 2 Modified: R

DS(on)

values

Doc ID 023799 Rev 2 13/14

STR2N2VH5, STT5N2VH5

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14/14 Doc ID 023799 Rev 2

STMicroelectronics STR2N2VH5, STT5N2VH5 Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Internal schematic diagram

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states

Table 5 . Dy n amic

Table 6. Switching times

Table 7. Source drain diode

3 Test circuits

Figure 3. Gate charge test circuit

4 Package mechanical data

Table 8. SOT-23 mechanical data

Figure 8. SOT-23 mechanical drawing

Figure 9. SOT-23 recommended footprint

Table 9. SOT23-6L package mechanical data

Figure 10. SOT23-6L package drawing

Figure 11. SOT23-6L recommended footprint

5 Revision history

Table 10. Document revision history