STMicroelectronics STR2N2VH5, STT5N2VH5 Schematic [ru]
STR2N2VH5,
1
2
3
4
5
6
SOT-23
SOT23-6L
STT5N2VH5
N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET
in SOT-23 and SOT23-6L packages
Datasheet − preliminary data
Features
Order codes V
STR2N2VH5
STT5N2VH5 5 A 1.6 W
■ Very low profile package
■ Conduction losses reduced
■ Switching losses reduced
■ 2.5 V gate drive
■ Very low threshold device
20 V
DS
R
DS(on)
0.03 Ω
(V
GS
0.04 Ω
(V
GS
max I
=4.5 V)
=2.5 V)
P
D
TOT
2.3 A 0.35 W
3
2
1
Figure 1. Internal schematic diagram
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to a FOM that is among the best in its
class.
Table 1. Device summary
Order codes Marking Package Packaging
STR2N2VH5
STD1
STT5N2VH5 SOT23-6L
SOT-23
Tape and reel
January 2013 Doc ID 023799 Rev 2 1/14
This is preliminar y information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
14
Contents STR2N2VH5, STT5N2VH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 023799 Rev 2
STR2N2VH5, STT5N2VH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Val ue
Symbol Parameter
SOT-23 SOT23-6L
Unit
V
V
I
D
I
D
I
DM
P
TOT
T
1. This value is rated according to R
2. Pulse width is limited by safe operating area
Table 3. Thermal data
Drain-source voltage 20 V
DS
Gate-source voltage ± 8 V
GS
(1)
Drain current (continuous) at T
(1)
Drain current (continuous) at T
(1)(2)
Drain current (pulsed) 9.2 20 A
(1)
Total dissipation at T
Storage temperature
stg
T
Max. operating junction temperature °C
j
= 25 °C 0.35 1.6 W
pcb
thj-pcb
= 25 °C 2.3 5 A
pcb
= 100 °C 1.4 3.1 A
pcb
Symbol Parameter
(1)
R
thj-pcb
1. When mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec.
Thermal resistance junction-pcb max 357 78 °C/W
- 55 to 150
°C
Val ue
Unit
SOT-23 SOT23-6L
Doc ID 023799 Rev 2 3/14
Electrical characteristics STR2N2VH5, STT5N2VH5
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
ID = 1 mA, VGS = 0 20 V
V
= 20 V
DS
V
= 20 V, TC=125 °C
DS
1
10µAµA
VGS = ± 8 V ± 100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 0.7 V
Static drain-source onresistance
= 4.5 V, ID = 2 A
V
GS
VGS = 2.5 V, ID = 2 A
0.025
0.031
0.03
0.04ΩΩ
Table 5 . Dy n amic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
Q
Q
Q
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
V
= 16 V, f = 1 MHz,
DS
VGS = 0
VDD = 16 V, ID = 2 A,
VGS = 4.5 V
(see Figure 3)
550
-
110
-
16
6
-
TBD
-
TBD
pF
pF
pF
nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r (V)
t
d (off)
4/14 Doc ID 023799 Rev 2
Voltage delay time
Voltage rise time
Current fall time
Crossing time
t
f
VDD = 16 V, ID = 2 A,
RG = 4.7 Ω, V
GS
(see Figure 4 and Figure 7)
= 4.5 V
TDB
TBD
TBD
TBD
ns
ns
ns
ns
STR2N2VH5, STT5N2VH5 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 2 A, VGS = 0 - 1.1 V
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 16 V, Tj = 150 °C
(see Figure 7)
-
TBD
-
TBD
TBD
2.3
9.2AA
ns
µC
A
Doc ID 023799 Rev 2 5/14
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