STMicroelectronics STD2NC45-1, STQ1NC45 Technical data
STD2NC45-1
STQ1NC45
N-CHANNEL 450V - 4.1Ω - 1 .5 A IPAK / TO-92
SuperMESH™Power MOSFET
TYPE V
STD2NC45-1
STQ1NC45
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ NEW HIGH VOLTAGE BENCHMARK
450 V
450 V
(on) = 4.1 Ω
DS
DSS
R
DS(on)
< 4.5 Ω
< 4.5 Ω
I
D
1.5 A
0.5 A
Pw
30 W
3.1 W
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s we ll established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
APPLICATIONS
■ SWITCH MODE LOW POWER SUPPLIES
(SMPS)
■ LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
■ LOW POWER BATTERY CHARGERS
3
2
1
IPAK
TO-92
TO-92 (Ammopack)
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STD2NC45-1 D2NC45 IPAK TUBE
STQ1NC45 Q1NC45 TO-92 BULK
STQ1NC45-AP Q1NC45 TO-92 AMMOPAK
1/11June 2003
STD2NC45-1, STQ1NC45
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STD2NC45-1 STQ1NC45
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤0.5A, di/dt ≤100A/µs, VDD≤ V
SD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 4.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 120 °C/W
Rthj-lead Thermal Resistance Junction-lead Max 40 °C/W
T
l
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
450 V
450 V
Gate- source Voltage ± 30 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
1.5 0.5 A
0.95 0.315 A
Drain Current (pulsed) 6 2 A
Total Dissipation at TC= 25°C
30 3.1 W
Derating Factor 0.24 0.025 W/°C
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-65 to 150
-65 to 150
IPAK TO-92
Maximum Lead Temperature For Soldering
275 260 °C
Purpose
°C
°C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IPAK TO-92
1.5 A
25 mJ
2/11
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
STD2NC45-1, STQ1NC45
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
ID= 250 µA, VGS= 0 450 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 30V ±100 nA
GS
V
DS=VGS,ID
= 250µA
2.3 3 3.7 V
1
50
VGS=10V,ID= 0.5 A 4.1 4.5 Ω
D(on)xRDS(on)max,
1.1 S
ID= 0.5 A
=25V,f=1MHz,VGS=0
V
DS
160
27.5
4.7
µA
µA
pF
pF
pF
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
t
r
Rise Time
VDD=225V,ID= 0.5 A
R
= 4.7Ω VGS=10V
G
6.7
4
(Resistive Load see, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
=360V,ID= 1.5 A,
V
DD
VGS=10V,RG= 4.7Ω
7
1.3
3.2
10
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 360V, ID= 1.5 A,
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
V
DD
R
=4.7Ω, VGS= 10V
G
(Inductive Load see, Figure 5)
8.5
12
18
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current
(2)
Source-drain Current (pulsed)
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD= 1.5 A, VGS=0
I
SD
VDD=100V,Tj=150°C
(see test circuit, Figure 5)
= 1.5 A, di/dt = 100A/µs
225
530
4.7
1.5
6.0
1.6 V
ns
ns
nC
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/11
STD2NC45-1, STQ1NC45
Safe Operating Area For IPAK
Thermal Imped ance For IPAK
Thermal Impedance For TO-92Safe Operating Area For TO-92
Output Characteristics
4/11
Transfer Characteristics
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