STMicroelectronics STD2NC45-1, STQ1NC45 Technical data

STD2NC45-1

STQ1NC45

N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET

TYPE	VDSS	RDS(on)	ID	Pw
STD2NC45-1	450 V	< 4.5 Ω	1.5 A	30 W
STQ1NC45	450 V	< 4.5 Ω	0.5 A	3.1 W

■TYPICAL RDS(on) = 4.1 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■GATE CHARGE MINIMIZED

■NEW HIGH VOLTAGE BENCHMARK

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

■SWITCH MODE LOW POWER SUPPLIES (SMPS)

■LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS)

■LOW POWER BATTERY CHARGERS

ORDERING INFORMATION

3

2

1

IPAK

TO-92

TO-92 (Ammopack)

INTERNAL SCHEMATIC DIAGRAM

SALES TYPE	MARKING	PACKAGE	PACKAGING
STD2NC45-1	D2NC45	IPAK	TUBE
STQ1NC45	Q1NC45	TO-92	BULK
STQ1NC45-AP	Q1NC45	TO-92	AMMOPAK

June 2003

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STD2NC45-1, STQ1NC45

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value			Unit
		STD2NC45-1		STQ1NC45
VDS	Drain-source Voltage (VGS = 0)	450			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)	450			V
VGS	Gatesource Voltage	± 30			V
ID	Drain Current (continuos) at TC = 25°C	1.5		0.5	A
ID	Drain Current (continuos) at TC = 100°C	0.95		0.315	A
IDM ( )	Drain Current (pulsed)	6		2	A
PTOT	Total Dissipation at TC = 25°C	30		3.1	W
	Derating Factor	0.24		0.025	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	3			V/ns
Tj	Operating Junction Temperature	-65 to 150			°C
Tstg	Storage Temperature	-65 to 150			°C

( ) Pulse width limited by safe operating area

(1) ISD ≤0.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

THERMAL DATA

		IPAK	TO-92
Rthj-case	Thermal Resistance Junction-case Max	4.1		°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	100	120	°C/W
Rthj-lead	Thermal Resistance Junction-lead Max		40	°C/W
Tl	Maximum Lead Temperature For Soldering	275	260	°C
	Purpose

AVALANCHE CHARACTERISTICS

Symbol	Parameter		Max Value			Unit
		IPAK			TO-92
IAR	Avalanche Current, Repetitive or Not-Repetitive		1.5			A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy		25			mJ
	(starting Tj = 25 °C, I D = IAR, VDD = 50 V)

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STD2NC45-1, STQ1NC45

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	450			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			50	µA
IGSS	Gate-body Leakage	VGS = ± 30V			±100	nA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250µA	2.3	3	3.7	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 0.5 A		4.1	4.5	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS > ID(on) x RDS(on)max,		1.1		S
		ID = 0.5 A
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		160		pF
Coss	Output Capacitance					pF
				27.5
Crss	Reverse Transfer			4.7		pF
	Capacitance

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 225 V, ID = 0.5 A		6.7		ns
tr	Rise Time	RG = 4.7Ω VGS = 10 V		4		ns
		(Resistive Load see, Figure 3)
Qg	Total Gate Charge	VDD = 360V, ID = 1.5 A,		7	10	nC
Qgs	Gate-Source Charge	VGS = 10V, RG = 4.7Ω		1.3		nC
Qgd	Gate-Drain Charge			3.2		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off-voltage Rise Time	VDD = 360V, ID = 1.5 A,		8.5		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		12		ns
tc	Cross-over Time	(Inductive Load see, Figure 5)		18		ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					1.5	A
ISDM (2)	Source-drain Current (pulsed)					6.0	A
VSD (1)	Forward On Voltage	ISD = 1.5	A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 1.5	A, di/dt = 100A/µs		225		ns
Qrr	Reverse Recovery Charge	VDD = 100V, Tj = 150°C			530		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			4.7		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.

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STD2NC45-1, STQ1NC45

Safe Operating Area For IPAK

Thermal Impedance For IPAK

Safe Operating Area For TO-92

Thermal Impedance For TO-92

Output Characteristics

Transfer Characteristics

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