ST MICROELECTRONICS STPSC8H065D Datasheet

K

NC

A

A

K

K

NC

A

A

K

K

TO-220AC

TO-220AC insulated

D²PAK

DPAK

A

K

STPSC8H065

Datasheet

650 V, 8 A high surge silicon carbide power Schottky diode

Features

• No reverse recovery charge in application current range

• Switching behavior independent of temperature

• High forward surge capability

• Insulated package TO-220AC Ins:

– Insulated voltage: 2500 V

– Typical package capacitance: 7 pF

• Power efficient product

Applications

• Switch mode power supply

• PFC

• DCDC converters

• LLC topologies

• Boost diode

RMS

Description

This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is
manufactured using a silicon carbide substrate. The wide band gap material allows
the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

Product status

STPSC8H065

Product summary

Symbol Value

I

F(AV)

V

RRM

T

j(max.)

Product label

8 A

650 V

175 °C

construction, no recovery is shown at turn-off and ringing patterns are negligible. The
minimal capacitive turn-off behavior is independent of temperature.

This STPSC8H065 is especially suited for use in PFC applications. This ST SiC
diode will boost the performance in hard switching conditions. Its high forward surge
capability ensures a good robustness during transient phases.

DS9225 - Rev 7 - February 2019
For further information contact your local STMicroelectronics sales office.

www.st.com

1 Characteristics

Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

1. Value based on R

2. (dP

Repetitive peak reverse voltage 650 V

RRM

Forward rms current 22 A

Average forward current

F(AV)

Surge non repetitive forward

I

FSM

current

I

Repetitive peak forward current

FRM

T

Storage temperature range -55 to +175 °C

stg

T

Operating junction temperature range

j

th(j-c)

/dTj) < (1/R

tot

) condition to avoid thermal runaway for a diode on its own heatsink.

th(j-a)

max.

TO-220AC, DPAK, D2PAK, Tc = 140 °C

TO-220AC Ins,Tc = 95 °C

(1)

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

TO-220AC, DPAK, D2PAK, Tc = 140 °C

TO-220AC Ins,Tc = 95 °C

(2)

(1)

, Tj = 175 °C, δ = 0.1

(1)

, DC

(1)

, Tj = 175 °C, δ = 0.1

STPSC8H065

Characteristics

8 A

75

69

420

33 A

-40 to +175 °C

A

Table 2. Thermal resistance parameters

Symbol

R

th(j-c)

Junction to case

Parameter Typ. value Max. value Unit

TO-220AC, DPAK, D2PAK

1.3 1.6

TO-220AC Ins 2.45 3.8

Table 3. Static electrical characteristics

Symbol

(1)

I

R

V

F

Reverse leakage current

(2)

Forward voltage drop

1. tp = 10 ms, δ < 2%

2. tp = 500 μs, δ < 2%

Parameter Test conditions Min. Typ. Max. Unit

Tj = 25 °C

Tj = 150 °C

Tj = 25 °C

Tj = 150 °C

VR = V

IF = 8 A

RRM

- 7 80

- 65 335

- 1.56 1.75

- 1.98 2.50

To evaluate the conduction losses, use the following equation:

P = 1.35 x I

F(AV)

+ 0.144 x I

F2(RMS)

For more information, please refer to the following application notes related to the power losses :

• AN604: Calculation of conduction losses in a power rectifier

• AN4021: Calculation of reverse losses on a power diode

°C/W

µA

V

DS9225 - Rev 7

page 2/17

STPSC8H065

Characteristics

Table 4. Dynamic electrical characteristics

Symbol Parameter Test conditions Typ. Unit

Q

C

Total capacitive charge

cj

Total capacitance

j

1.

Most accurate value for the capacitive charge: QcjVR=  ∫

VR = 400 V

VR = 0 V, Tc = 25 °C, F = 1 MHz

VR = 400 V, Tc = 25 °C, F = 1 MHz

V

R

CjV dV

0

23.5 nC

414

38

pF

DS9225 - Rev 7

page 3/17

1.1 Characteristics (curves)

0

2

4

6

8

10

12

14

16

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

A)IF(

V

F

(V)

0

10

20

30

40

50

60

70

80

0 1 2 3 4 5 6 7 8

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

A)IF(

V

F

(V)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0 50 100 150 200 250 300 350 400 450 500 550 600 650

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

IM(A)

0

10

20

30

40

50

60

70

80

0 2 5 50 75 100 125 150 175

δ =0.1

δ =0.3

δ =0.5

δ =0.7

δ =1

TC(°C)

T

δ

=tp/T

tp

STPSC8H065

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values, low level)

Figure 3. Reverse leakage current versus reverse voltage

applied (typical values)

Figure 2. Forward voltage drop versus forward current

(typical values, high level)

Figure 4. Peak forward current versus case temperature

(TO-220AC, DPAK, D2PAK)

DS9225 - Rev 7

page 4/17

IM(A)

0

10

20

30

40

50

60

0 2 5 50 75 100 125 150 175

δ =0.1

δ =0.3

δ

=0.5

δ =0.7

δ =1

TC(°C)

T

δ

=tp/T

tp

0

50

100

150

200

250

300

350

400

450

500

0.1 1 .0 10.0 100.0 1000.0

F=1 MHz

V

OSC

=30 mV

RMS

Tj=25 °C

VR(V)

Cj(pF)

Z

th(j-c )/Rth(j-c )

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Single pulse

tp(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Single pulse

Z

th(j-c )/Rth(j-c )

tp(s)

STPSC8H065

Characteristics (curves)

Figure 5. Peak forward current versus case temperature

(TO-220AC Ins)

Figure 7. Relative variation of thermal impedance junction

to case versus pulse duration (TO-220AC, DPAK and

D²PAK)

Figure 6. Junction capacitance versus reverse voltage

applied (typical values)

Figure 8. Relative variation of thermal impedance junction

to case versus pulse duration (TO-220AC Ins)

DS9225 - Rev 7

page 5/17

I

FSM

(A)

1.E+01

1.E+02

1.E+03

1.E-05 1.E-04 1.E-03 1.E-02

Ta=25 °C

Ta=125 °C

tp(s)

0

4

8

12

16

20

24

28

0 50 100 150 200 250 300 350 400

VR(V)

QCj(nC)

STPSC8H065

Characteristics (curves)

Figure 9. Non-repetitive peak surge forward current

versus pulse duration (sinusoidal waveform)

Figure 10. Total capacitive charges versus reverse

voltage applied (typical values)

DS9225 - Rev 7

page 6/17