ST MICROELECTRONICS STPSC8H065C Datasheet
STPSC8H065C
A1
K
A2
A1
A2
K
TO-220AB
STPSC8H065CT
650 V power Schottky silicon carbide diode
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimized
capacitive charge at turn-off behavior is
independent of temperature.
Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost
the performance in hard switching conditions. Its
high forward surge capability ensures a good
robustness during transient phases.
Table 1. Device summary
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
High forward surge capability
Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
2 x 4 A
650 V
November 2013 DocID024808 Rev 2 1/8
This is information on a product in full production.
www.st.com
Characteristics STPSC8H065C
dPtot
dTj
---------------
1
Rth j a–
------------------------- -
1 Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
FRM
T
1. Value based on R
2. Value based on R
3. condition to avoid thermal runaway for a diode on its own heatsink
Repetitive peak reverse voltage 650
Forward rms current 22
= 145 °C
T
Average forward current
Surge non repetitive forward current
Repetitive peak forward current
Storage temperature range -65 to +175 °C
stg
Operating junction temperature
T
j
max (per diode)
th(j-c)
max (per device)
th(j-c)
Table 3. Thermal resistance parameters
(3)
c
Tc = 145 °C
t
= 10 ms sinusoidal, Tc = 25 °C
p
= 10 ms sinusoidal, Tc = 125 °C
t
p
= 10 µs square, Tc = 25 °C
t
p
Tc = 145 °C
(1)
, DC Per diode 4
(2)
, DC Per device 8
(1)
,Tj = 175 °C, = 0.1
-40 to +175 °C
38
35
200
17
Symbol Parameter Typ. Max. Unit
Per diode 1.8 2.7
R
th(j-c)
Junction to case
°C/WPer device 0.95 1.40
V
A
A
A
A
A
R
th(c)
Coupling - 0.1
When the diodes 1 and 2 are used simultaneously:
T
(diode 1) = P(diode1) x R
j
Table 4. Static electrical characteristics (per diode)
(Per diode) + P(diode2) x R
th(j-c)
th(c)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
T
(1)
IR
V
F
1. tp = 10 ms, < 2%
2. t
p
Reverse leakage current
(2)
Forward voltage drop
= 500 µs, < 2%
= 25 °C
j
= 150 °C - 35 170
T
j
T
= 25 °C
j
= 150 °C - 1.98 2.5
T
j
V
R
= 4 A
I
F
= V
RRM
-340
- 1.56 1.75
To evaluate the conduction loss es use the following equation:
P = 1.35 x I
+ 0.288 x I
F(AV)
F2(RMS)
µA
V
2/8 DocID024808 Rev 2
STPSC8H065C Characteristics
Q = cj(vR).dv
R
cj
∫
V
OUT
0
0
1
2
3
4
5
6
7
8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
A)IFM(
VFM(V)
0
4
8
12
16
20
24
28
32
36
40
0123 45678
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
IFM(A)
VFM(V)
IR(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 50 100 150 200 250 300 350 400 450 500 550 600 650
Tj=25 °C
Tj=150 °C
Tj=175 °C
VR(V)
IM(A)
0
10
20
30
40
50
0 25 50 75 100 125 150 175
d = 0.1
d = 0.3
d = 0.5
d = 1
d = 0.7
TC(°C)
T
d
=tp/T
tp
Table 5. Dynamic electrical characteristics (per diode)
Symbol Parameter Test conditions Typ. Unit
(1)
Q
cj
C
1. Most accurate value for the capacitive charge:
Figure 1. Forward voltage drop versus forward
current (typical values, low level, per diode)
Total capacitive charge VR = 400 V 12.5 nC
V
= 0 V, Tc = 25 °C, F = 1 MHz 200
Total capacitance
j
R
= 400 V, Tc = 25 °C, F = 1 MHz 21
V
R
Figure 2. Forward voltage drop versus forward
current (typical values, high level, per diode)
pF
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 4. Peak forward current versus case
temperature (per diode)
DocID024808 Rev 2 3/8
8
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