ST MICROELECTRONICS STPSC8H065C Datasheet

STPSC8H065C

A1

K

A2

A1

A2

K

TO-220AB

STPSC8H065CT

650 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimized
capacitive charge at turn-off behavior is
independent of temperature.

Especially suited for use in interleaved or bridge­less topologies, this dual-diode rectifier will boost
the performance in hard switching conditions. Its
high forward surge capability ensures a good
robustness during transient phases.

Table 1. Device summary

Features

 No or negligible reverse recovery
 Switching behavior independent of

temperature

 High forward surge capability

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

2 x 4 A

650 V

November 2013 DocID024808 Rev 2 1/8

This is information on a product in full production.

www.st.com

Characteristics STPSC8H065C

dPtot

dTj

---------------

1

Rth j a–

------------------------- -



1 Characteristics

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

FRM

T

1. Value based on R

2. Value based on R

3. condition to avoid thermal runaway for a diode on its own heatsink

Repetitive peak reverse voltage 650
Forward rms current 22

= 145 °C

T

Average forward current

Surge non repetitive forward current

Repetitive peak forward current
Storage temperature range -65 to +175 °C

stg

Operating junction temperature

T

j

max (per diode)

th(j-c)

max (per device)

th(j-c)

Table 3. Thermal resistance parameters

(3)

c

Tc = 145 °C
t

= 10 ms sinusoidal, Tc = 25 °C

p

= 10 ms sinusoidal, Tc = 125 °C

t

p

= 10 µs square, Tc = 25 °C

t

p

Tc = 145 °C

(1)

, DC Per diode 4

(2)

, DC Per device 8

(1)

,Tj = 175 °C,  = 0.1

-40 to +175 °C

38
35

200

17

Symbol Parameter Typ. Max. Unit

Per diode 1.8 2.7

R

th(j-c)

Junction to case

°C/WPer device 0.95 1.40

V
A
A
A

A

A

R

th(c)

Coupling - 0.1

When the diodes 1 and 2 are used simultaneously:

T

(diode 1) = P(diode1) x R

j

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode2) x R

th(j-c)

th(c)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

T

(1)

IR

V

F

1. tp = 10 ms,  < 2%

2. t

p

Reverse leakage current

(2)

Forward voltage drop

= 500 µs,  < 2%

= 25 °C

j

= 150 °C - 35 170

T

j

T

= 25 °C

j

= 150 °C - 1.98 2.5

T

j

V

R

= 4 A

I

F

= V

RRM

-340

- 1.56 1.75

To evaluate the conduction loss es use the following equation:
P = 1.35 x I

+ 0.288 x I

F(AV)

F2(RMS)

µA

V

2/8 DocID024808 Rev 2

STPSC8H065C Characteristics

Q = cj(vR).dv

R

cj

∫

V

OUT

0

0

1

2

3

4

5

6

7

8

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

A)IFM(

VFM(V)

0

4

8

12

16

20

24

28

32

36

40

0123 45678

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

IFM(A)

VFM(V)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0 50 100 150 200 250 300 350 400 450 500 550 600 650

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

IM(A)

0

10

20

30

40

50

0 25 50 75 100 125 150 175

d = 0.1

d = 0.3

d = 0.5

d = 1

d = 0.7

TC(°C)

T

d

=tp/T

tp

Table 5. Dynamic electrical characteristics (per diode)

Symbol Parameter Test conditions Typ. Unit

(1)

Q

cj

C

1. Most accurate value for the capacitive charge:

Figure 1. Forward voltage drop versus forward

current (typical values, low level, per diode)

Total capacitive charge VR = 400 V 12.5 nC

V

= 0 V, Tc = 25 °C, F = 1 MHz 200

Total capacitance

j

R

= 400 V, Tc = 25 °C, F = 1 MHz 21

V

R

Figure 2. Forward voltage drop versus forward

current (typical values, high level, per diode)

pF

Figure 3. Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

Figure 4. Peak forward current versus case

temperature (per diode)

DocID024808 Rev 2 3/8

8

Characteristics STPSC8H065C

Cj(pF)

0

50

100

150

200

250

0.1 1.0 10.0 100.0 1000.0

F=1 MHz

V

OSC

=30 mV

RMS

Tj=25 °C

VR(V)

Z

th(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Single pulse

tp(s)

I

FSM

(A)

1.E+01

1.E+02

1.E+03

1.E-05 1.E-04 1.E-03 1.E-02

Ta=25 °C

Ta=125 °C

tp(s)

Qcj(nC)

0

2

4

6

8

10

12

14

0 50 100 150 200 250 300 350 400

VR(V)

Figure 5. Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 7. Non-repetitive peak surge forward

current versus pulse duration (sinusoidal

waveform, per diode)

Figure 6. Relative variation of thermal

impedance junction to case versus pulse

duration

Figure 8. Total capacitive charges versus

reverse voltage applied (typical values, per

diode)

4/8 DocID024808 Rev 2

STPSC8H065C Package information

A

F

D1

J1

H1

∅P

Q

D

L1

L

b

E

e1

e

L20

L30

b1

c

Resin gate

0.5 mm max.
protrusion

(1)

Resin gate

0.5 mm max.
protrusion

(1)

(1) Resin gate position accepted in each of the two
position shown as well as the symmetrical opposites

2 Package information

 Epoxy meets UL94, V0
 Cooling method: conduction (C)
 Recommended torque value: 0.4 to 0.6 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at:www.st.com.
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

Figure 9. TO-220AB dimension definitions

DocID024808 Rev 2 5/8

8

Package information STPSC8H065C

Table 6. TO-220AB dimensions values

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.17 0.18
b 0.61 0.88 0.024 0.035

b1 1.14 1.70 0.045 0.067

c 0.48 0.70 0.019 0.027

D 15.25 15.75 0.60 0.62

D1 1.27 typ. 0.05 typ.

E 10 10.40 0.39 0.41
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.19 0.20

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.24 0.26

J1 2.40 2.72 0.094 0.107

L13 14 0.510.55

L1 3.50 3.93 0.137 0.154
L20 16.40 typ. 0.64 typ.
L30 28.90 typ. 1.13 typ.

P 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.1 16

6/8 DocID024808 Rev 2

STPSC8H065C Ordering information

3 Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPSC8H065CT STPSC8H065CT TO-220AB 1.86 g 50 Tube

4 Revision history

Date Revision Changes

24-Jun-2013 1 First issue.
07-Nov-2013 2 Updated Figure 1 and Figure 2.

Table 7. Ordering information

Table 8. Document revision history

DocID024808 Rev 2 7/8

8

STPSC8H065C

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely res ponsibl e fo r the c hoic e, sele cti on an d use o f the S T prod ucts and s ervice s des crib ed he rein , and ST assumes n o

liability whatsoever relati ng to the choice, selection or use o f the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this

document refers to any third part y p ro duct s or se rvic es it sh al l n ot be dee med a li cens e gr an t by ST fo r t he use of su ch thi r d party products
or services, or any intellectua l property c ontained the rein or consi dered as a warr anty coverin g the use in any manner whats oever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOS E (AND THEIR E QUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all info rmation previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2013 STMicroelectronics - All rights reserved

STMicroelectronics group of compan ie s

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Philip pines - Singapore - Spain - Sweden - Switzer land - United Kingdom - United States of America

www.st.com

8/8 DocID024808 Rev 2