ST MICROELECTRONICS STPSC806D Datasheet

600 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
function
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
STPSC806
TO-220AC
STPSC806D
K
A
NC
2
PAK
D
STPSC806G
A
K
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.

Table 1. Device summary

I
F(AV)
V
RRM
T
j (max)
Q
C (typ)
8 A
600 V
175 °C
10 nC
November 2010 Doc ID 16286 Rev 3 1/8
www.st.com
8
Characteristics STPSC806

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
I
FRM
T

Table 3. Thermal resistance

Repetitive peak reverse voltage 600
RRM
Forward rms current 18
Average forward current Tc = 115 °C, δ = 0.5 8
= 10 ms sinusoidal, Tc = 25 °C
t
Surge non repetitive forward current
p
= 10 ms sinusoidal, Tc = 125 °C
t
p
= 10 µs square, Tc = 25 °C
t
p
Repetitive peak forward current Tc = 115 °C, Tj = 150 °C, δ = 0.1, 30
Storage temperature range -55 to +175 °C
stg
Operating junction temperature -40 to +175 °C
T
j
30 24
120
Symbol Parameter Maximum value Unit
V
A
A
A
A
R
th(j-c)

Table 4. Static electrical characteristics

Junction to case 2.4 °C/W
Symbol Parameter Tests conditions Min. Typ. Max. Unit
IR
V
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
current
(2)
Forward voltage drop
F
Reverse leakage
(1)
= 25 °C
T
j
= 150 °C - 150 1000
T
j
= V
V
R
RRM
Tj = 25 °C
IF = 8 A
= 150 °C - 1.6 2.1
T
j
-20100 µA
-1.41.7
To evaluate the conduction losses use the following equation: P = 1.2 x I

Table 5. Other parameters

Symbol Parameter Test conditions Typ. Unit
Q
c
C Total capacitance
+ 0.113 x I
F(AV)
F2(RMS)
Total capacitive charge
V
= 400 V, IF = 8 A dIF/dt = -200 A/µs
r
T
= 150 °C
j
= 0 V, Tc = 25 °C, F = 1 Mhz 450
V
r
= 400 V, Tc = 25 °C, F = 1 Mhz 35
V
r
10 nC
V
pF
2/8 Doc ID 16286 Rev 3
STPSC806 Characteristics
Figure 1. Forward voltage drop versus
forward current (typical values)
IFM(A)
16
14
12
10
8
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Tj=25 °CTj=25 °C
Tj=150 °CTj=150 °C
Tj=175 °CTj=175 °C
VFM(V)
Figure 3. Peak forward current versus case
temperature
IM(A)
70
60
δ=0.1
50
40
δ=0.3
30
δ=0.5
20
δ=1
10
0
0 25 50 75 100 125 150 175
δ=0.7
TC(°C)
δ
=tp/T
T
tp
Figure 2. Reverse leakage current versus
reverse voltage applied (maximum values)
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
Tj=150 °CTj=150 °C
0 50 100 150 200 250 300 350 400 450 500 550 600
Tj=175 °CTj=175 °C
Tj=25 °CTj=25 °C
VR(V)
Figure 4. Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
350
300
250
200
150
100
50
0
1 10 100 1000
VR(V)
V
OSC
F=1 MHz
=30 mV
Tj=25 °C
RMS
Doc ID 16286 Rev 3 3/8
Characteristics STPSC806
th(j-c)/Rth(j-c)
Single pulse
impedance junction to case versus pulse duration
tp(s)
Figure 6. Non-repetitive peak surge forward
current versus pulse duration (sinusoidal waveform)
I
(A)
FSM
1.E+03
1.E+02
1.E+01
1.E+00
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Figure 5. Relative variation of thermal
Z
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Figure 7. Total capacitive charge versus dIF/dt (typical values)

QC(nC)
16
IF=8A
14
V
=400 V
R
Tj=150 °C
12
10
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Tc=25 °C
Tc=125 °C
tp(s)
4/8 Doc ID 16286 Rev 3
STPSC806 Package information

2 Package information

Epoxy meets UL94, V0
Cooling method: convection (C)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK

Table 6. TO-220AC dimensions

®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
H2
Ø I
L5
A
C
L7
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
L2
F1
L9
L6
D
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4
F
M
E
G
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. l 3.75 3.85 0.147 0.151
Doc ID 16286 Rev 3 5/8
Package information STPSC806
Table 7. D
L2
L
L3
2
PAK dimensions
E
A1
B2
B
G
* FLAT ZONE NO LESSTHAN 2mm
Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A
A1 2.49 2.69 0.098 0.106
C2
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
A2
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
M
*
V2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126

Figure 8. Footprint (dimensions in mm)

16.90
10.30
8.90
R 0.40 typ. 0.016 typ.
V2
5.08
1.30
3.70
6/8 Doc ID 16286 Rev 3
STPSC806 Ordering information

3 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode
STPSC806D STPSC806D TO-220AC 1.86 g 50 Tube
STPSC806G-TR STPSC806G D2PAK 1.48 g 1000 Tape and reel

4 Revision history

Table 9. Document revision history

Date Revision Changes
24-Sep-2009 1 First issue
16-June-2010 2 Added D2PAK pa ck a g e.
03-Nov-2010 3 Updated Table 8.
Doc ID 16286 Rev 3 7/8
STPSC806
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8/8 Doc ID 16286 Rev 3
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