ST MICROELECTRONICS STPSC806D Datasheet

600 V power Schottky silicon carbide diode

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Particularly suitable in PFC boost diode

function

Description

The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.

STPSC806

TO-220AC

STPSC806D

K

A

NC

2

PAK

D

STPSC806G

A

K

ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.

Table 1. Device summary

I

F(AV)

V

RRM

T

j (max)

Q

C (typ)

8 A

600 V

175 °C

10 nC

November 2010 Doc ID 16286 Rev 3 1/8

www.st.com

8

Characteristics STPSC806

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

I

FRM

T

Table 3. Thermal resistance

Repetitive peak reverse voltage 600

RRM

Forward rms current 18

Average forward current Tc = 115 °C, δ = 0.5 8

= 10 ms sinusoidal, Tc = 25 °C

t

Surge non repetitive forward
current

p

= 10 ms sinusoidal, Tc = 125 °C

t

p

= 10 µs square, Tc = 25 °C

t

p

Repetitive peak forward current Tc = 115 °C, Tj = 150 °C, δ = 0.1, 30

Storage temperature range -55 to +175 °C

stg

Operating junction temperature -40 to +175 °C

T

j

30
24

120

Symbol Parameter Maximum value Unit

V

A

A

A

A

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case 2.4 °C/W

Symbol Parameter Tests conditions Min. Typ. Max. Unit

IR

V

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

current

(2)

Forward voltage drop

F

Reverse leakage

(1)

= 25 °C

T

j

= 150 °C - 150 1000

T

j

= V

V

R

RRM

Tj = 25 °C

IF = 8 A

= 150 °C - 1.6 2.1

T

j

-20100
µA

-1.41.7

To evaluate the conduction losses use the following equation:
P = 1.2 x I

Table 5. Other parameters

Symbol Parameter Test conditions Typ. Unit

Q

c

C Total capacitance

+ 0.113 x I

F(AV)

F2(RMS)

Total capacitive charge

V

= 400 V, IF = 8 A dIF/dt = -200 A/µs

r

T

= 150 °C

j

= 0 V, Tc = 25 °C, F = 1 Mhz 450

V

r

= 400 V, Tc = 25 °C, F = 1 Mhz 35

V

r

10 nC

V

pF

2/8 Doc ID 16286 Rev 3

STPSC806 Characteristics

Figure 1. Forward voltage drop versus

forward current (typical values)

IFM(A)

16

14

12

10

8

6

4

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=25 °CTj=25 °C

Tj=150 °CTj=150 °C

Tj=175 °CTj=175 °C

VFM(V)

Figure 3. Peak forward current versus case

temperature

IM(A)

70

60

δ=0.1

50

40

δ=0.3

30

δ=0.5

20

δ=1

10

0

0 25 50 75 100 125 150 175

δ=0.7

TC(°C)

δ

=tp/T

T

tp

Figure 2. Reverse leakage current versus

reverse voltage applied
(maximum values)

IR(µA)

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

Tj=150 °CTj=150 °C

0 50 100 150 200 250 300 350 400 450 500 550 600

Tj=175 °CTj=175 °C

Tj=25 °CTj=25 °C

VR(V)

Figure 4. Junction capacitance versus

reverse voltage applied
(typical values)

C(pF)

350

300

250

200

150

100

50

0

1 10 100 1000

VR(V)

V

OSC

F=1 MHz

=30 mV

Tj=25 °C

RMS

Doc ID 16286 Rev 3 3/8