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STPSC6H065G
Datasheet
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ST MICROELECTRONICS STPSC6H065G Datasheet

STPSC6H065
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650 V power Schottky silicon carbide diode
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Table 1. Device summary

Features
No reverse recovery charge in application
current range
temperature
Dedicated to PFC applicationsHigh forward surge capabilityInsulated package TO-220AC Ins:
– Insulated voltage: 2500 V rms – Typical package capacitance: 7 pF
Symbol Value
I
F(AV)
V
RRM
(max.) 175 °C
T
j
6 A
650 V
February 2016 DocID023247 Rev 7 1/14
This is information on a product in full production.
www.st.com
Characteristics STPSC6H065
dPtot
dTj
---------------
1
Rth j a–
------------------------- -

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
1. Value based on R
2. condition to avoid thermal runaway for a diode on its own heatsink
Repetitive peak reverse voltage 650 V
RRM
Forward rms current 22 A Average forward
current
Surge non repetitive
FSM
forward current
Repetitive peak
FRM
forward current
T
Storage temperature range -55 to +175 °C
stg
Operating junction temperature
T
j
max.
th(j-c)
TO-220AC, DPAK, D TO-220AC Ins, T
= 10 ms sinusoidal, Tc = 25 °C
t
p
= 10 ms sinusoidal, Tc = 125 °C
t
p
= 10 µs square, Tc = 25 °C
t
p
TO-220AC, DPAK, D TO-220AC Ins, T
(2)
2
PAK, Tc = 135 °C
= 110 °C
c
2
P AK, Tc = 135 °C
= 110 °C
c
(1)
, DC
(1)
, Tj = 175 °C, = 0.1
(1)
, DC
(1)
, Tj = 175 °C, = 0.1
-40 to +175 °C
6A
60 52
A
400
25 A

Table 3. Thermal resistance

Symbol Parameter Typ. value Max. value Unit
2
PAK 1.6 2.4
R
th(j-c)
Junction to case
TO-220AC, DPAK, D TO-220AC Ins 2.9 4.2

Table 4. Static electr ical characteristics

Symbol Parameter Tests conditions Min. Typ. Max. Unit
T
= 25 °C
(1)
IR
V
F
1. tp = 10 ms, < 2%
2. t
p
Reverse leakage current
(2)
Forward voltage drop
= 500 µs, < 2%
j
= 150 °C - 50 250
T
j
= V
V
R
RRM
Tj = 25 °C
IF = 6 A
= 150 °C - 1.98 2.5
T
j
To evaluate the conduction losses use the following equation: P = 1.35 x I
-560
-1.561.75
+ 0.192 x I
F(AV)
F2(RMS)
°C/W
µA
V
2/14 DocID023247 Rev 7
STPSC6H065 Characteristics
Q = cj(vR).dv
R
cj
∫
V
OUT
0
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
A)IF(
V
F
(V)
0
10
20
30
40
50
60
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
A)IF(
V
F
(V)
IR(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 50 100 150 200 250 300 350 400 450 500 550 600 650
Tj=25 °C
Tj=150 °C
Tj=175 °C
VR(V)
IM(A)
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150 175
d = 0.1
d = 0.3
d = 0.5
d = 1
d = 0.7
TC(°C)
T
d
=tp/T
tp
I
M

Table 5. Other parameters

Symbol Parameter Test conditions Typ. Unit
(1)
Q
cj
C
1. Most accurate value for the capacitive charge:
Figure 1. Forward voltage drop versus forward
Total capacitive charge VR = 400 V 18 nC
V
= 0 V, Tc = 25 °C, F = 1 MHz 300
Total capacitance
j
R
= 400 V, Tc = 25 °C, F = 1 MHz 30
V
R
Figure 2. Forward voltage drop versus forward
current (typical values, low level)
current (typical values, high level)
pF
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 4. Peak forward current versus case
temperature (TO-220AC, DPAK, D² PAK)
DocID023247 Rev 7 3/14
14
Characteristics STPSC6H065
IM(A)
0
10
20
30
40
50
0 25 50 75 100 125 150 175
d = 0.1
d = 0.3
d = 0.5
d = 1
d = 0.7
TC(°C)
T
d
=tp/T
tp
I
M
0
50
100
150
200
250
300
0.1 1.0 10.0 100.0 1000.0
F=1 MHz
V
OSC
=30 mV
RMS
Tj=25 °C
VR(V)
Cj(pF)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Z
th(j-c)/Rth(j-c)
Single pulse
tp(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
Z
th(j-c)/Rth(j -c)
tp(s)
1.E+01
1.E+02
1.E+03
1.E-05 1.E-04 1.E-03 1.E-02
I
FSM
(A)
Ta=25 °C
Ta=125 °C
tp(s)
0
4
8
12
16
20
0 50 100 150 200 250 300 350 400
Q
cj
(nC)
VR(V)
Figure 5. Peak forward current versus case
temperature (TO-220AC Ins)
Figure 7. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AC, DPAK and D²PAK)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values)
Figure 8. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AC Ins)
Figure 9. Non-repetitive peak surge forward
current versus pulse duration (sinusoidal
waveform)
4/14 DocID023247 Rev 7
Figure 10. Total capacitive charges versus
reverse voltage applied (typical values)
STPSC6H065 Package information
A
C
D
L7
Ø I
L5
L6
L9
L4
F
H2
G
L2
F1
E
M

2 Package information

Epoxy meets UL94, V0 Recommended torque value: 0.55 N·m Maximum torque value: 0.7 N·m Cooling method: conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at:www.st.com. ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.

2.1 TO-220AC package information

Figure 11. TO-220AC package outline

DocID023247 Rev 7 5/14
14
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