The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1. Device summary
Features
No reverse recovery charge in application
current range
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Insulated package TO-220AC Ins:
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at:www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
Order codeMarkingPackageWeightBase qtyDelivery mode
STPSC6H065DSTPSC6H065DTO-220AC1.86 g50Tube
STPSC6H065DISTPSC 6H065DITO-220AC Ins2.12 g50Tube
STPSC6H065G-TRSTPSC6H065GD
STPSC6H065B-TRSTPSC 6H065DPAK0.32 g2500Tape and reel
4 Revision history
DateRevisionChanges
18-Jun-20121First issue.
31-Aug-20122
10-Oct-20123Added Max. value in Table 3.
07-Nov-20134Updated Figure 1, Figure 2, Figure 13, Figure 14, and Table 8.
07-Jan-20145Added TO-220AC Ins package.
22-Jul-20156Updated T able 10 and reformatted to current standard.
Table 11. Document revision history
Table 10. Ordering information
2
PAK1.48 g1 000Tape and reel
Added diode configuration graphic on front page. Updated value of
Qcj and footnote equation in Table 5.
22-Feb-20167Updated cover image.
DocID023247 Rev 713/14
14
Page 14
STPSC6H065
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