The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1. Device summary
SymbolValue
I
F(AV)
V
RRM
T
(max)175 °C
j
4 A
650 V
July 2015DocID023598 Rev 51/12
This is information on a product in full production.
www.st.com
Page 2
CharacteristicsSTPSC4H065
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
<
1 Characteristics
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified )
SymbolParameterValueUnit
V
I
F(RMS)
I
F(AV)
I
FSM
I
FRM
T
1. Value based on R
2. conditi on to avoid therm al runaw ay for a diode on it s own heat sink
Repetitive peak reverse voltage650
RRM
Forward rms current22A
Avera ge forwar d curren t
Surge non repetitive forward
current
Repetitive peak forward
current
St orage temperature range-55 to +175 °C
stg
T
Operating jun cti on temperature
j
max.
th(j-c)
TO-220AC, DPAK, T
TO-220AC Ins, Tc = 125 °C
t
= 10 ms sinusoidal, Tc = 25 °C
p
= 10 ms sinusoidal, Tc = 125 °C
t
p
= 10 µs square, Tc = 25 °C
t
p
TO-220AC, DPAK, T
TO-220AC Ins, Tc = 125 °C
(2)
= 145 °C
c
= 145 °C
c
(1)
(1)
, DC
(1)
, Tj = 175 °C, δ = 0.1
(1)
, Tj = 175 °C, δ = 0.1
, DC
4
38
35
200
17
-40 to +175 °C
V
A
A
A
Table 3. Thermal resistance
SymbolParameterTyp. valueMax. valueUnit
TO-220AC, DPAK1.82.7
R
th(j-c)
Junction to case
TO-220AC Ins34.5
°C/W
Table 4. Static electrical characteristics
SymbolParameterTests conditionsMin.Typ.Max.Unit
T
= 25 °C
(1)
I
R
V
F
1. tp = 10 ms, δ < 2%
2. t
p
Reverse leakage current
(2)
Forward voltage drop
= 500 µs, δ < 2%
j
T
= 150 °C-35170
j
= 25 °C
T
j
= 150 °C-1.982.5
T
j
V
R
I
= 4 A
F
= V
RRM
To evaluate the conduction losses use the following equation: P = 1.35 x I
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at:www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
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