ST MICROELECTRONICS STPSC406D Datasheet

STPSC406

K

K

A

K

A

NC

TO-220AC

STPSC406D

DPAK

STPSC406B

600 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.

ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.

Table 1. Device summary

I

F(AV)

V

RRM

T

j (max)

Q

C (typ)

4 A

600 V

175 °C

3 nC

Features

• No or negligible reverse recovery

• Switching behavior independent of

temperature

• Dedicated to PFC boost diode

August 2015 DocID16283 Rev 2 1/8

This is information on a product in full production.

www.st.com

Characteristics STPSC406

dPtot

dTj

<

1

Rth(j-a)

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

I

1. condition to avoid thermal runaway for a diode on its own heatsink

Repetitive peak reverse voltage 600

RRM

Forward rms current 11
Average forward

current

Surge non repetitive

FSM

forward current

Repetitive peak forw ard

FRM

current

T

Storage temperature range -55 to +175 °C

stg

T

Operating junction temperature

j

DPAK, T
TO-220AC, Tc = 95 °C, δ = 0.5

= 10 ms sinusoidal, Tc = 25 °C

t

p

tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C

DPAK, T
TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1

= 110 °C, δ = 0.5

c

= 115 °C, Tj = 150 °C, δ = 0.1

c

(1)

-40 to +175 °C

T a ble 3. Thermal resistance

4

14
10
40

14

Symbol Parameter Value Unit

T0-220AC 5.5

R

th(j-c)

Junction to case

DPAK 4.5

Table 4. Static electrical characteristics

V
A

A

A

A

°C/W

Symbol Parameter Tests conditions Min. Typ. Max. Unit

T

= 25 °C

Reverse leakage

(1)

I

R

current

(2)

VF

1. tp = 10 ms, δ < 2%

2. tp = 500 µs, δ < 2%

Forward voltage drop

j

T

= 150 °C - 60 500

j

T

= 25 °C

j

= 150 °C - 1.9 2.4

T

j

V

I

To evaluate the conduction losses use the following equation:
P = 1.20x I

2/8 DocID16283 Rev 2

F(AV)

+ 0.3 x I

F2(RMS)

= V

R

= 4 A

F

RRM

-1050
µA

-1.551.9

V

STPSC406 Characteristics

IFM(A)

0

1

2

3

4

5

6

7

8

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=150 °CTj=150 °C

Tj=175 °CTj=175 °C

Tj=25 °CTj=25 °C

VFM(V)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

0 50 100 150 200 250 300 350 400 450 500 550 600

Tj=25 °CTj=25 °C

Tj=150 °CTj=150 °C

Tj=175 °CTj=175 °C

VR(V)

IM(A)

0

5

10

15

20

25

30

35

0 25 50 75 100 125 150 175

T

δ

=tp/T

tp

δ=0.1

δ=0.3

δ=0.5

d=1δ=1

d=0.7δ=0.7

TC(°C)

IM(A)

0

5

10

15

20

25

30

35

0 25 50 75 100 125 150 175

T

δ

=tp/T

tp

δ=0.1

δ=0.3

δ=0.5

d=1δ=1

d=0. 7δ=0.7

TC(°C)

Table 5. Other parameters

Symbol Parameter Test conditions Typ. Unit

Q

Total capacitive charge

c

C Total capacita nc e

Vr = 400 V, IF = 4 A dIF/dt = -200 A/µs
T

= 150 °C

j

V

r

V

r

Figure 1. Forward voltage drop versus forward

current (typical values)

3nC

= 0 V, Tc = 25 °C, F = 1 Mhz 200

pF

= 400 V, Tc = 25 °C, F = 1 Mhz 20

Figure 2. Reverse leakage current versus

reverse voltage applied

(maximum values)

Figure 3. Peak forward current versus case

temperature (TO-220AC)

Figure 4. Peak forward current versus case

temperature (DPAK)

DocID16283 Rev 2 3/8

8