The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
Table 1. Device summary
I
F(AV)
V
RRM
T
j (max)
Q
C (typ)
4 A
600 V
175 °C
3 nC
Features
• No or negligible reverse recovery
• Switching behavior independent of
temperature
• Dedicated to PFC boost diode
August 2015DocID16283 Rev 21/8
This is information on a product in full production.
www.st.com
CharacteristicsSTPSC406
dPtot
dTj
<
1
Rth(j-a)
1 Characteristics
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
SymbolParameterValueUnit
V
I
F(RMS)
I
F(AV)
I
I
1. condition to avoid thermal runaway for a diode on its own heatsink
Repetitive peak reverse voltage600
RRM
Forward rms current11
Average forward
current
Surge non repetitive
FSM
forward current
Repetitive peak forw ard
FRM
current
T
Storage temperature range-55 to +175 °C
stg
T
Operating junction temperature
j
DPAK, T
TO-220AC, Tc = 95 °C, δ = 0.5
= 10 ms sinusoidal, Tc = 25 °C
t
p
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
DPAK, T
TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1
= 110 °C, δ = 0.5
c
= 115 °C, Tj = 150 °C, δ = 0.1
c
(1)
-40 to +175 °C
T a ble 3. Thermal resistance
4
14
10
40
14
SymbolParameterValueUnit
T0-220AC5.5
R
th(j-c)
Junction to case
DPAK4.5
Table 4. Static electrical characteristics
V
A
A
A
A
°C/W
SymbolParameterTests conditionsMin.Typ.Max.Unit
T
= 25 °C
Reverse leakage
(1)
I
R
current
(2)
VF
1. tp = 10 ms, δ < 2%
2. tp = 500 µs, δ < 2%
Forward voltage drop
j
T
= 150 °C-60500
j
T
= 25 °C
j
= 150 °C-1.92.4
T
j
V
I
To evaluate the conduction losses use the following equation:
P = 1.20x I
2/8DocID16283 Rev 2
F(AV)
+ 0.3 x I
F2(RMS)
= V
R
= 4 A
F
RRM
-1050
µA
-1.551.9
V
STPSC406Characteristics
IFM(A)
0
1
2
3
4
5
6
7
8
0.00.51.01.52.02.53.03.5
Tj=150°CTj=150 °C
Tj=175°CTj=175 °C
Tj=25°CTj=25 °C
VFM(V)
IR(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
050 100 150 200 250 300 350 400 450 500 550 600
Tj=25°CTj=25 °C
Tj=150°CTj=150 °C
Tj=175°CTj=175 °C
VR(V)
IM(A)
0
5
10
15
20
25
30
35
0255075100125150175
T
δ
=tp/T
tp
δ=0.1
δ=0.3
δ=0.5
d=1δ=1
d=0.7δ=0.7
TC(°C)
IM(A)
0
5
10
15
20
25
30
35
0255075100125150175
T
δ
=tp/T
tp
δ=0.1
δ=0.3
δ=0.5
d=1δ=1
d=0.7δ=0.7
TC(°C)
Table 5. Other parameters
SymbolParameterTest conditionsTyp.Unit
Q
Total capacitive charge
c
CTotal capacita nc e
Vr = 400 V, IF = 4 A dIF/dt = -200 A/µs
T
= 150 °C
j
V
r
V
r
Figure 1. Forward voltage drop versus forward
current (typical values)
3nC
= 0 V, Tc = 25 °C, F = 1 Mhz200
pF
= 400 V, Tc = 25 °C, F = 1 Mhz20
Figure 2. Reverse leakage current versus
reverse voltage applied
(maximum values)
Figure 3. Peak forward current versus case
temperature (TO-220AC)
Figure 4. Peak forward current versus case
temperature (DPAK)
DocID16283 Rev 23/8
8
CharacteristicsSTPSC406
C(pF)
0
25
50
75
100
125
150
1101001000
F=1 MHz
V
OSC
=30 mV
RMS
Tj=25 °C
VR(V)
Z
th(j-c)/Rth(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-051.E-041.E-031.E-021.E-011.E+001.E+01
Single pulse
tp(s)
Z
th(j c)/Rth(j c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-051.E-041.E-031.E-021.E-011.E+001.E+01
Single pulse
tp(s)
I
FSM
(A)
1.E+00
1.E+01
1.E+02
1.E+03
1.E-051.E-041.E-031.E-021.E-011.E+00
Tc=25 °C
Tc=125 °C
tp(s)
QC(nC)
0
1
2
3
4
5
6
7
050100 150 200 250 300 350 400 450 500
IF=4 A
V
R
=400 V
Tj=150 °C
dIF/dt(A/µs)
Figure 5. Junction capacitance versus reverse
voltage applied
(typical values)
Figure 7. Relative variation of thermal
impedance junction to case
versus pulse duration (DPAK)
Figure 6. Relative variation of thermal
impedance junction to case
versus pulse duration (TO-220AC)
Figure 8. Non-repetitive peak surge forward
current versus pulse duration (sinusoidal
waveform)
Figure 9. Total capacitive charges versus dIF/dt (typical values)
4/8DocID16283 Rev 2
STPSC406Package information
A
C
D
L7
Ø I
L5
L6
L9
L4
F
H2
G
L2
F1
E
M
2 Package information
•Epoxy meets UL94, V0
•Cooling method: convection (C)
•Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
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