ST MICROELECTRONICS STPSC20H065CW Datasheet
STPSC20H065C
K (2)
A1 (1)
A2 (3)
A1
K
A2
A1
K
A2
TO-220AB
STPSC20H065CT
TO-247
STPSC20H065CW
650 V power Schottky silicon carbide diode
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1. Device summary
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
2 x 10 A
650 V
November 2013 DocID023605 Rev 3 1/9
This is information on a product in full production.
www.st.com
Characteristics STPSC20H065C
dPtot
dTj
---------------
1
Rth j a–
------------------------- -
1 Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise
specified)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
T
1. Value based on R
2. Value based on R
3. condition to avoid thermal runaway for a diode on its own heatsink
Repetitive peak reverse voltage 650
RRM
Forward rms current 22
= 135 °C
T
Average forward current
Surge non repetitive forward
FSM
current
Repetitive peak forward current
FRM
Storage temperature range -55 to +175 °C
stg
Operating junction temperature
T
j
max (per diode)
th(j-c)
max (per device)
th(j-c)
c
Tc = 125 °C
= 10 ms sinusoidal, Tc = 25 °C
t
p
= 10 ms sinusoidal, Tc = 125 °C
t
p
= 10 µs square, Tc = 25 °C
t
p
Tc = 135 °C
(3)
(1)
, DC, per diode
(2)
, per device
(1)
, Tj = 175 °C, = 0.1
Table 3. Thermal resistance
Symbol Parameter
TO-247
TO-220AB
TO-247
TO-220AB
R
R
Per diode
Junction to case per diode
th(j-c)
Total
Coupling 0.4
th(c)
10
20
90
80
470
36
-40 to +175 °C
Value
Typ. Max.
1.25 1.5
0.83 0.95
V
A
A
A
A
Unit
°C/W
When the two diodes 1 and 2 are used simultaneously:
T
(diode 1) = P(diode 1) x R
j
Table 4. Static electrical characteristics per diode
(Per diode) + P(diode 2) x R
th(j-c)
Symbol Parameter T ests conditions Min. Typ. Max. Unit
T
= 25 °C
(1)
I
Reverse leakage current
R
(2)
V
Forward voltage drop
F
1. tp = 10 ms, < 2%
2. tp = 500 µs, < 2%
j
= 150 °C - 85 425
T
j
T
= 25 °C
j
= 150 °C - 1.98 2.5
T
j
To evaluate the conduction loss es use the following equation:
P = 1.35 x I
2/9 DocID023605 Rev 3
+ 0.115 x I
F(AV)
F2(RMS)
= V
V
R
= 10 A
I
F
RRM
th(c)
-9100
µA
-1.561.75
V
STPSC20H065C Characteristics
Q = cj(vR).dv
R
cj
∫
V
OUT
0
A)IFM(
0
2
4
6
8
10
12
14
16
18
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
VFM(V)
0
10
20
30
40
50
60
70
80
90
100
012345678
Ta=150 °C
Ta=175 °C
Ta=25 °C
Pulse test : tp=500µs
Ta=100 °C
IFM(A)
VFM(V)
IR(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 50 100 150 200 250 300 350 400 450 500 550 600 650
Tj=25 °C
Tj=150 °C
Tj=175 °C
VR(V)
IM(A)
0
10
20
30
40
50
60
70
80
0 25 50 75 100 125 150 175
δ = 0.5
δ = 0.1
δ = 0.3
δ = 1
δ = 0.7
T
δ
=tp/T
tp
TC(°C)
Table 5. Dynamic electrical characteristics per diode
Symbol Parameter T est conditions Typ. Unit
(1)
Q
1. Most accurate value for the capacitive charge:
Figure 1. Forward voltage drop versus forward
current (typical values per diode, low level)
Total capacitive charge VR = 400 V 28.5 nC
cj
V
= 0 V, Tc = 25 °C, F = 1 MHz 480
C
Total capacitance
j
R
= 400 V, Tc = 25 °C, F = 1 MHz 48
V
R
Figure 2. Forward voltage drop versus forward
current (typical values per diode, high level)
pF
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values per
diode)
Figure 4. Peak forward current versus case
temperature, per diode
DocID023605 Rev 3 3/9
9
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