ST MICROELECTRONICS STPSC20H065CW Datasheet

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STPSC20H065C

K (2)

A1 (1)

A2 (3)

TO-220AB

STPSC20H065CT

TO-247

STPSC20H065CW

650 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Table 1. Device summary

Features

 No or negligible reverse recovery  Switching behavior independent of

temperature

 Dedicated to PFC applications  High forward surge capability

Symbol Value

F(AV)

RRM

(max) 175 °C

2 x 10 A

650 V

November 2013 DocID023605 Rev 3 1/9

This is information on a product in full production.

www.st.com

Characteristics STPSC20H065C

dPtot

dTj

---------------

Rth j a–

------------------------- -



1 Characteristics

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise

specified)

Symbol Parameter Value Unit

F(RMS)

F(AV)

1. Value based on R

2. Value based on R

3. condition to avoid thermal runaway for a diode on its own heatsink

Repetitive peak reverse voltage 650

RRM

Forward rms current 22

= 135 °C

Average forward current

Surge non repetitive forward

FSM

current

Repetitive peak forward current

FRM

Storage temperature range -55 to +175 °C

stg

Operating junction temperature

max (per diode)

th(j-c)

max (per device)

th(j-c)

Tc = 125 °C

= 10 ms sinusoidal, Tc = 25 °C

= 10 ms sinusoidal, Tc = 125 °C

= 10 µs square, Tc = 25 °C

Tc = 135 °C

(3)

(1)

, DC, per diode

(2)

, per device

(1)

, Tj = 175 °C,  = 0.1

Table 3. Thermal resistance

Symbol Parameter

TO-247 TO-220AB TO-247 TO-220AB

Per diode

Junction to case per diode

th(j-c)

Total

Coupling 0.4

th(c)

10 20 90

470

-40 to +175 °C

Value

Typ. Max.

1.25 1.5

0.83 0.95

V A

Unit

°C/W

When the two diodes 1 and 2 are used simultaneously: T

(diode 1) = P(diode 1) x R

Table 4. Static electrical characteristics per diode

(Per diode) + P(diode 2) x R

th(j-c)

Symbol Parameter T ests conditions Min. Typ. Max. Unit

= 25 °C

(1)

Reverse leakage current

(2)

Forward voltage drop

1. tp = 10 ms,  < 2%

2. tp = 500 µs,  < 2%

= 150 °C - 85 425

= 25 °C

= 150 °C - 1.98 2.5

To evaluate the conduction loss es use the following equation: P = 1.35 x I

2/9 DocID023605 Rev 3

+ 0.115 x I

F(AV)

F2(RMS)

= V

= 10 A

RRM

th(c)

-9100 µA

-1.561.75

STPSC20H065C Characteristics

Q = cj(vR).dv

∫

OUT

A)IFM(

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

VFM(V)

100

012345678

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

IFM(A)

VFM(V)

IR(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0 50 100 150 200 250 300 350 400 450 500 550 600 650

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

IM(A)

0 25 50 75 100 125 150 175

δ = 0.5

δ = 0.1

δ = 0.3

δ = 1

δ = 0.7

=tp/T

TC(°C)

Table 5. Dynamic electrical characteristics per diode

Symbol Parameter T est conditions Typ. Unit

(1)

1. Most accurate value for the capacitive charge:

Figure 1. Forward voltage drop versus forward

current (typical values per diode, low level)

Total capacitive charge VR = 400 V 28.5 nC

= 0 V, Tc = 25 °C, F = 1 MHz 480

Total capacitance

= 400 V, Tc = 25 °C, F = 1 MHz 48

Figure 2. Forward voltage drop versus forward

current (typical values per diode, high level)

Figure 3. Reverse leakage current versus

reverse voltage applied (typical values per

diode)

Figure 4. Peak forward current versus case

temperature, per diode

DocID023605 Rev 3 3/9

Characteristics STPSC20H065C

100

150

200

250

300

350

400

450

500

0.1 1.0 10.0 100.0 1000.0

F=1 MHz

OSC

=30 mV

RMS

Tj=25 °C

VR(V)

Cj(pF)

th(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Single pulse

tp(s)

FSM

(A)

1.E+01

1.E+02

1.E+03

1.E-05 1.E-04 1.E-03 1.E-02

Ta=25 °C

Ta=125 °C

tp(s)

0 50 100 150 200 250 300 350 400

VR(V)

Qcj(nC)

Figure 5. Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 7. Non-repetitive peak surge forward

current versus pulse duration per diode

(sinusoidal waveform)

Figure 6. Relative variation of thermal

impedance junction to case versus pulse

duration per diode

Figure 8. Total capacitive charges versus

reverse voltage applied (typical values per

diode)

4/9 DocID023605 Rev 3

STPSC20H065C Package information

Dia

2 Package information

 Epoxy meets UL94, V0  Cooling method: conduction (C)  Recommended torque value:

– TO-220AB 0.4 to 0.6 N·m, – TO-247 0.55 N·m (1.0 N·m maximum)

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK

packages, depending on their level of environmental compliance. ECOPACK®

is an ST trademark.

Figure 9. TO-220AB dimension definitions

DocID023605 Rev 3 5/9

Package information STPSC20H065C

Table 6. TO-220AB dimension values

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409

L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ.

Diam. 3.75 3.85 0.147 0.151

6/9 DocID023605 Rev 3

STPSC20H065C Package information

BACK VIEW

Heat-sink plane

11223

∅R

∅P

Figure 10. TO-247 dimension definitions

Table 7. TO-247 dimension values

Dimensions

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ Max.

A 4.85 5.15 0.191 0.203

A1 2.20 2.60 0.086 0.102

b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133

c 0.40 0.80 0.015 0.031

(1)

19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 5.45 5.60 0.209 0.215 0.220 L 14.20 14.80 0.559 0.582

L1 3.70 4.30 0.145 0.169 L2 18.50 typ. 0.728 typ.

P

(2)

3.55 3.65 0.139 0.143

R 4.50 5.50 0.177 0.217

S 5.30 5.50 5.70 0.209 0.216 0.224

1. Dimension D plus gate protrusion does not exceed 20.5 mm

2. Resin thickness around the mounting hole is not less than 0.9 mm

DocID023605 Rev 3 7/9

Ordering information STPSC20H065C

3 Ordering information

Order code Marking Package Weight Bas e qty Delivery mode

STPSC20H065CT STPSC20H065C TO-220AB 1.86 g 50 Tube

STPSC20H065CW STPSC20H065CW TO-247 4.43 g 30 Tube

4 Revision history

Date Revision Changes

31-Aug-2012 1 First issue.

10-Oct-2012 2 Added Max. values to Table 3.

07-Nov-2013 3 Updated Figure 1 and Figure 2.

Table 8. Ordering information

Table 9. Document revision history

8/9 DocID023605 Rev 3

STPSC20H065C

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DocID023605 Rev 3 9/9

ST MICROELECTRONICS STPSC20H065CW Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Table 1. Device summary

1 Characteristics

Table 3. Thermal resistance

Table 4. Static electrical characteristics per diode

Table 5. Dynamic electrical characteristics per diode

2 Package information

Figure 9. TO-220AB dimension definitions

Table 6. TO-220AB dimension values

Figure 10. TO-247 dimension definitions

Table 7. TO-247 dimension values

3 Ordering information

4 Revision history

Table 8. Ordering information

Table 9. Document revision history