STMicroelectronics STPS5L25B Technical data
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150°C
V
(max) 0.35 V
F
FEATURES AND BENEFITS
5A
25 V
STPS5L25B
2
3
4
4(TAB)
VERY LOW FORWARD VOLTAGE DROP FOR
n
3
2
LESS POWER DISSIPATION AND REDUCED
HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
n
1
NC
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
n
HIGH POWER SURFACE MOUNT MINIATURE
DPAK
PACKAGE
AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
PowerSuppliesandhighfrequencyDCtoDCconverters.
This device is especially intended for use as a
Rectifier at the secondary of 3.3V SMPS units.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Repetitive peak reverse voltage 25 V
RMS forward current 7 A
Average forward current Tc = 145°C δ = 0.5 5 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Repetitive peak reverse current tp=2 µs square F=1kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 2 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 3000 W
Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 5A
thermal runaway condition for a diode on its own heatsink
−1()
1/4
STPS5L25B
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
I
R
V
Pulse test : * tp = 380 µs, δ <2%
Junction to case 2.5 °C/W
* Reverse leakage current Tj = 25°C VR=V
RRM
350 µA
Tj = 125°C 55 115 mA
* Forward voltage drop Tj = 25°C IF= 5 A 0.47 V
F
Tj = 125°C I
Tj = 25°C I
Tj = 125°C I
= 5 A 0.31 0.35
F
= 10 A 0.59
F
= 10 A 0.41 0.50
F
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
2.5
2.0
1.5
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
1.0
T
0.5
=tp/T
0.0
IF(av) (A)
0123456
δ
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
6
5
4
δ
=tp/T
Rth(j-a)=70°C/W
T
tp
3
2
1
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
2/4
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