STMicroelectronics STPS4045CP, STPS4045CW Technical data
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STPS4045CP/CW |
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POWER SCHOTTKY RECTIFIERS
MAIN PRODUCTS CHARACTERISTICS
IF(av) |
2 x 20 A |
VRRM |
45 V |
Tj (max) |
175 °C |
VF (max) |
0.63 V |
FEATURES AND BENEFITS
nVERY SMALL CONDUCTION LOSSES
nNEGLIGIBLE SWITCHING LOSSES
nEXTREMELY FAST SWITCHING
nLOW THERMAL RESISTANCE
nAVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters.
Packaged either in SOT-93 or TO-247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
A1 
K
A2 
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A2 |
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A2 |
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K |
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K |
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A1 |
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A1 |
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SOT-93 |
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TO-247 |
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STPS4045CP |
STPS4045CW |
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Symbol |
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Parameter |
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Value |
Unit |
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VRRM |
Repetitive peak reverse voltage |
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45 |
V |
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IF(RMS) |
RMS forward current |
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30 |
A |
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IF(AV) |
Average forward current |
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Tc = 150°C |
Per diode |
20 |
A |
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δ = 0.5 |
Per device |
40 |
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IFSM |
Surge non repetitive forward current |
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tp = 10 ms sinusoidal |
220 |
A |
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IRRM |
Repetitive Peak reverse current |
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tp = 2 µs square |
1 |
A |
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F = 1kHz |
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IRSM |
Non repetitive peak reverse current |
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tp = 100 µs square |
3 |
A |
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PARM |
Repetitive peak avalanche power |
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tp = 1µs Tj = 25°C |
6000 |
W |
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Tstg |
Storage temperature range |
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- 65 to + 175 |
°C |
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Tj |
Maximum operating junction temperature * |
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175 |
°C |
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dV/dt |
Critical rate of rise of reverse voltage |
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10000 |
V/µs |
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* : |
dPtot |
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< |
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1 |
thermal runaway condition for a diode on its own heatsink |
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dTj |
Rth( j − a) |
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July 2003 - Ed: 4C |
1/5 |
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STPS4045CP/CW
THERMAL RESISTANCES
Symbol |
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Parameter |
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Value |
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Unit |
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Rth (j-c) |
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Junction to case |
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Per diode |
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1.5 |
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°C/W |
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total |
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0.8 |
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Rth (c) |
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Coupling |
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0.1 |
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When the diodes 1 and 2 are used simultaneously : |
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TJ(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) |
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STATIC ELECTRICAL CHARACTERISTICS (per diode) |
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Symbol |
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Parameter |
Tests Conditions |
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Min. |
Typ. |
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Max. |
Unit |
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IR * |
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Reverse leakage cur- |
Tj = 25°C |
V R = VRRM |
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200 |
µA |
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rent |
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Tj = 125°C |
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11 |
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40 |
mA |
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VF * |
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Forward voltage drop |
Tj = 125°C |
IF = 20 A |
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0.56 |
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0.63 |
V |
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Tj = 25°C |
IF = 40 A |
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0.94 |
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Tj = 125°C |
I F = 40 A |
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0.7 |
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0.83 |
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Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.46 x IF(AV) + 0.0085 IF2(RMS)
Fig. 1: Average forward power dissipation |
Fig. 2: Average current versus ambient |
versus average forward current (per diode). |
temperature (per diode). |
PF(av)(W) |
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18 |
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δ = 0.5 |
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22 |
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16 |
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δ = 0.2 |
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20 |
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14 |
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δ = 0.1 |
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18 |
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16 |
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12 |
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δ = 0.05 |
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δ = 1 |
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14 |
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10 |
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12 |
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8 |
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10 |
6 |
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8 |
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T |
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6 |
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4 |
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4 |
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2 |
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IF(av) (A) |
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δ=tp/T |
tp |
2 |
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0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
20 |
22 |
24 |
0 |
0 |
26 |
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IF(av)(A) |
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Rth(j-a)=Rth(j-c) |
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Rth(j-a)=15°C/W |
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T |
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δ=tp/T |
tp |
Tamb(°C) |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
2/5
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