STMicroelectronics STPS4045CP, STPS4045CW Technical data
®
MAIN PRODUCTS CHARACTERISTICS
I
F(av)
V
RRM
2x20A
45 V
Tj (max) 175 °C
V
(max) 0.63 V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW THERMAL RESISTANCE
n
AVALANCHE CAPABILITY SPECIFIED
n
STPS4045CP/CW
POWER SCHOTTKY RECTIFIERS
A1
K
A2
A2
K
A1
A1
A2
K
DESCRIPTION
SOT-93
STPS4045CP
TO-247
STPS4045CW
Dual center tap Schottky rectifier suited for
switchmode power supply and high frequency DC
to DC converters.
Packaged either in SOT-93 or TO-247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive Peak reverse current tp=2µs square
45 V
30 A
20
40
220 A
1A
F = 1kHz
I
RSM
P
ARM
T
stg
Tj
dV/dt
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
3A
6000 W
- 65 to + 175 °C
175 °C
10000 V/µs
A
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 4C
thermal runaway condition for a diode on itsown heatsink
−1()
1/5
STPS4045CP/CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case Per diode
total
Coupling
1.5
0.8
0.1
When the diodes 1 and 2 areused simultaneously :
(diode 1) = P(diode1) x R
∆ T
J
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Reverse leakage current
*
Forward voltage drop Tj =125°CI
Tj = 25°C V
Tj = 125°C
Tj=25°CI
Tj = 125°C I
R=VRRM
=20A
F
=40A
F
=40A
F
11 40 mA
0.56 0.63 V
0.7 0.83
200 µA
0.94
°C/W
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.46xI
Fig. 1: Average forward power dissipation
versus average forward current (per diode).
PF(av)(W)
18
16
14
12
10
8
6
4
2
0
δ = 0.05
0 2 4 6 8101214161820222426
F(AV)
+ 0.0085 I
δ = 0.1
F2(RMS)
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
Fig. 2: Average current versus ambient
temperature (per diode).
IF(av)(A)
22
20
18
16
14
12
10
T
tp
8
6
4
2
0
0 25 50 75 100 125 150 175
δ
=tp/T
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
tp
Tamb(°C)
2/5
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