STMicroelectronics STPS40150CG, STPS40150CT, STPS40150CW Technical data
®
STPS40150CG/CT/CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x20A
150 V
Tj (max) 175°C
V
(max) 0.75 V
F
FEATURES AND BENEFITS
HIGHJUNCTIONTEMPERATURECAPABILITY
■
LOW LEAKAGE CURRENT
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
■
HIGH FREQUENCY OPERATION
■
DESCRIPTION
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
2
Packaged in TO-247, TO-220AB and D
PAK, this
devices is intended for use to enhance the
reliability of the application.
A1
A2
A1
TO-220AB
STPS40150CT
STPS40150CG
A2
K
K
D2PAK
K
TO-247
STPS40150CW
A2
A1
A1
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
I
*:
RRM
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
Tj
dV/dt
dPtot
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj Rth j a
October 2003 - Ed: 1A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
150 V
60 A
20
40
250 A
14100 W
- 65 to + 175 °C
175 °C
10000 V/µs
A
1/6
STPS40150CT/CW/CG
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
R
th(j-c)
th(j-c)
th(c)
Junction to case TO-220AB / D2PAK
Junction to case TO-247
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
*
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj = 25°CI
Tj = 25°C V
Tj = 125°C
Tj = 125°C I
Tj = 25°CI
Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
R=VRRM
=20A
F
=20A
F
=40A
F
=40A
F
Per diode
Total
Per diode
Total
1.2
0.85
1.2
0.85
°C/W
°C/W
Coupling 0.5 °C/W
th(c)
28µA
211mA
0.92 V
0.69 0.75
1.00
0.79 0.86
To evaluate the conduction losses use the following equation :
P = 0.64 x I
F(AV)
+ 0.0055 I
F2(RMS)
Fig. 1: Conduction losses versus average current
(per diode).
P(W)
F(AV)
22
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
δ = 0.05
δ = 0.1
δ = 0.2
I(A)
F(AV)
δ = 0.5
δ
δ = 1
=tp/T
T
tp
Fig. 2: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
2/6
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